1N3879 thru 1N3883R
Silicon Fast
Recovery Diode
VRRM = 50 V - 400 V
IF = 6 A
Features
• High Surge Capability
• Types up to 400 V VRRM
DO-4 Package
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
3. Stud is base.
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Repetitive peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Symbol
Conditions
1N3879 (R) 1N3880 (R) 1N3881 (R) 1N3882 (R) 1N3883 (R) Unit
VRRM
50
VRMS
35
70
140
210
280
V
VDC
50
100
200
300
400
V
100
200
300
400
V
Continuous forward current
IF
TC ≤ 100 °C
6
6
6
6
6
A
Surge non-repetitive forward
current, Half Sine Wave
IF,SM
TC = 25 °C, tp = 8.3 ms
90
90
90
90
90
A
Operating temperature
Storage temperature
Tj
Tstg
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Diode forward voltage
Reverse current
1N3879 (R) 1N3880 (R) 1N3881 (R) 1N3882 (R) 1N3883 (R) Unit
Symbol
Conditions
VF
IF = 6 A, Tj = 25 °C
VR = 50 V, Tj = 25 °C
VR = 50 V, Tj = 150 °C
1.4
15
3
1.4
15
3
1.4
15
3
1.4
15
3
1.4
15
3
μA
mA
IF=0.5 A, IR=1.0 A,
IRR= 0.25 A
200
200
200
200
200
nS
2.5
2.5
2.5
2.5
2.5
°C/W
IR
V
Recovery Time
Maximum reverse recovery
time
TRR
Thermal characteristics
Thermal resistance, junction
- case
RthJC
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1
1N3879 thru 1N3883R
www.genesicsemi.com/silicon-products/fast-recovery-rectifiers/
2
1N3879 thru 1N3883R
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
DO- 4 (DO-203AA)
M
J
P
D
B
G
N
C
E
F
A
Inches
Min
Millimeters
Max
A
Min
Max
10-32 UNF
B
0.424
0.437
10.77
11.10
C
-----
0.505
-----
12.82
D
------
0.800
-----
20.30
E
0.453
0.492
11.50
12.50
F
0.114
0.140
2.90
3.50
G
-----
0.405
-----
10.29
J
-----
0.216
-----
5.50
M
-----
φ0.302
-----
φ7.68
N
0.031
0.045
0.80
1.15
P
0.070
0.79
1.80
2.00
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