FR85B02 thru FR85JR02
Silicon Fast
Recovery Diode
VRRM = 100 V - 600 V
IF = 85 A
Features
• High Surge Capability
• Types from 100 V to 600 V VRRM
DO-5 Package
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
3. Stud is base.
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Repetitive peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Symbol
Conditions
VRRM
FR85B(R)02
FR85D(R)02
FR85G(R)02
FR85J(R)02
Unit
100
200
400
600
V
VRMS
70
140
280
420
V
VDC
100
200
400
600
V
Continuous forward current
IF
TC ≤ 100 °C
85
85
85
85
A
Surge non-repetitive forward
current, Half Sine Wave
IF,SM
TC = 25 °C, tp = 8.3 ms
1369
1369
1369
1369
A
Operating temperature
Storage temperature
Tj
Tstg
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Diode forward voltage
Reverse current
Symbol
Conditions
FR85B(R)02
FR85D(R)02
FR85G(R)02
FR85J(R)02
Unit
VF
IF = 85 A, Tj = 25 °C
VR = 100 V, Tj = 25 °C
VR = 100 V, Tj = 125 °C
1.3
25
20
1.3
25
20
1.3
25
20
1.3
25
20
μA
mA
IF=0.5 A, IR=1.0 A,
IRR= 0.25 A
200
200
200
250
nS
IR
V
Recovery Time
Maximum reverse recovery
time
TRR
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FR85B02 thru FR85JR02
www.genesicsemi.com/silicon-products/fast-recovery-rectifiers/
2
FR85B02 thru FR85JR02
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
DO- 5 (DO-203AB)
M
J
K
P
D
B
G
N
F
C
E
A
Inches
Min
Millimeters
Max
A
Min
Max
1/4 –28 UNF
B
0.669
0.687
17.19
17.44
C
-----
0.794
-----
20.16
D
-----
1.020
-----
25.91
E
0.422
0.453
10.72
11.50
F
0.115
0.200
2.93
5.08
G
-----
0.460
-----
11.68
J
-----
0.280
-----
7.00
K
0.236
-----
6.00
-----
M
-----
0.589
-----
14.96
N
-----
0.063
-----
1.60
P
0.140
0.175
3.56
4.45
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