1N3212 thru 1N3214R
Silicon Standard
Recovery Diode
VRRM = 400 V - 600 V
IF = 15 A
Features
• High Surge Capability
• Types from 400 V to 600 V VRRM
DO-5 Package
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
3. Stud is base.
Maximum ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
("R" devices have leads reversed)
Conditions
1N3212 (R)
1N3213 (R)
1N3214 (R)
Unit
Repetitive peak reverse voltage
VRRM
400
500
600
V
RMS reverse voltage
VRMS
280
350
420
V
DC blocking voltage
VDC
400
500
600
V
Continuous forward current
IF
TC ≤ 150 °C
15
15
15
A
Surge non-repetitive forward
current, Half Sine Wave
IF,SM
TC = 25 °C, tp = 8.3 ms
297
297
297
A
Operating temperature
Storage temperature
Tj
Tstg
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Diode forward voltage
Reverse current
Symbol
VF
IR
Conditions
1N3212 (R)
1N3213 (R)
1N3214 (R)
Unit
IF = 15 A, Tj = 25 °C
VR = 50 V, Tj = 25 °C
VR = 50 V, Tj = 150 °C
1.5
10
10
1.5
10
10
1.5
10
10
μA
mA
0.65
0.65
0.65
°C/W
V
Thermal characteristics
Thermal resistance, junction - ca
RthJC
www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
1
1N3212 thru 1N3214R
www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
2
1N3212 thru 1N3214R
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
DO- 5 (DO-203AB)
M
J
K
P
D
B
G
N
F
C
E
A
Inches
Min
Millimeters
Max
A
Min
Max
1/4 –28 UNF
B
0.669
0.687
17.19
17.44
C
-----
0.794
-----
20.16
D
-----
1.020
-----
25.91
E
0.422
0.453
10.72
11.50
F
0.115
0.200
2.93
5.08
G
-----
0.460
-----
11.68
J
-----
0.280
-----
7.00
K
0.236
-----
6.00
-----
M
-----
0.589
-----
14.96
N
-----
0.063
-----
1.60
P
0.140
0.175
3.56
4.45
www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
3