S85B thru S85JR
Silicon Standard
Recovery Diode
VRRM = 100 V - 600 V
IF =85 A
Features
• High Surge Capability
• Types from 100 V to 600 V VRRM
DO-5 Package
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
3. Stud is base.
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
S85B (R)
S85D (R)
S85G (R)
S85J (R)
Unit
Repetitive peak reverse voltage
VRRM
100
200
400
600
V
RMS reverse voltage
VRMS
70
140
280
420
V
DC blocking voltage
VDC
600
V
100
200
400
Continuous forward current
IF
TC ≤ 140 °C
85
85
85
85
A
Surge non-repetitive forward
current, Half Sine Wave
IF,SM
TC = 25 °C, tp = 8.3 ms
1800
1800
1800
1800
A
Operating temperature
Storage temperature
Tj
Tstg
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Diode forward voltage
Reverse current
Symbol
VF
IR
Conditions
S85B (R)
S85D (R)
S85G (R)
S85J (R)
Unit
IF = 85 A, Tj = 25 °C
VR = 100 V, Tj = 25 °C
VR = 100 V, Tj = 180 °C
1.1
10
15
1.1
10
15
1.1
10
15
1.1
10
9
μA
mA
0.65
0.65
0.65
0.65
°C/W
V
Thermal characteristics
Thermal resistance, junction case
RthJC
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S85B thru S85JR
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S85B thru S85JR
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
DO- 5 (DO-203AB)
M
J
K
P
D
B
G
N
F
C
E
A
Inches
Millimeters
Min
Max
Min
Max
B
0.669
0.687
17.19
17.44
C
-----
0.794
-----
20.16
D
-----
1.020
-----
25.91
E
0.422
0.453
10.72
11.50
F
0.115
0.200
2.93
5.08
G
-----
0.460
-----
11.68
J
-----
0.280
-----
7.00
K
0.236
-----
6.00
-----
M
-----
0.589
-----
14.96
N
-----
0.063
-----
1.60
P
0.140
0.175
3.56
4.45
A
1/4 –28 UNF
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