UFT10005

UFT10005 thru UFT10060
Silicon Super Fast
Recovery Diode
VRRM = 50 V - 600 V
IF(AV) = 100 A
Features
• High Surge Capability
• Types from 50 V to 600 V VRRM
TO-249AB Package
• Non Isolated to plate
• Not ESD Sensitive
Maximum ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
UFT10005 UFT10010 UFT10020 UFT10040 UFT10060 Unit
Repetitive peak reverse voltage
VRRM
50
100
RMS reverse voltage
VRMS
35
70
DC blocking voltage
Operating temperature
Storage temperature
VDC
Tj
Tstg
50
100
-55 to 150 -55 to 150
-55 to 150 -55 to 150
200
140
200
-55 to 150
-55 to 150
400
600
420
280
600
400
-55 to 150 -55 to 150
-55 to 150 -55 to 150
V
V
V
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Symbol
Conditions
IF(AV)
TC ≤ 125 °C
100
100
100
100
100
A
IFSM
tp = 8.3 ms, half sine
1000
1000
1000
1000
1000
A
Maximum instantaneous forward
voltage (per leg)
VF
IF = 50 A, Tj = 25 °C
1.0
1.0
1.0
1.3
1.7
V
Maximum reverse current at
rated DC blocking voltage (per
leg)
IR
Tj = 25 °C
25
25
25
25
25
μA
Tj = 125 °C
3
3
3
3
3
mA
Maximum reverse recovery time
(per leg)
Trr
IF=0.5 A, IR=1.0 A,
IRR= 0.25 A
60
60
60
70
90
ns
1.0
1.0
1.0
1.0
1.0
°C/W
Parameter
Average forward current (per
pkg)
Peak forward surge current (per
leg)
UFT10005 UFT10010 UFT10020 UFT10040 UFT10060 Unit
Thermal characteristics
Maximum thermal resistance,
junction - case (per leg)
RΘJC
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UFT10005 thru UFT10060
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UFT10005 thru UFT10060
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
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