MURT20005 thru MURT20020R
Silicon Super Fast
Recovery Diode
VRRM = 50 V - 200 V
IF = 200 A
Features
• High Surge Capability
• Types from 50 V to 200 V VRRM
Three Tower Package
• Isolation Type Package
• Electrically Isolated base plate
• Not ESD Sensitive
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
MURT20005(R)
MURT20010(R)
MURT20020(R)
Unit
VRRM
50
100
200
V
RMS reverse voltage
VRMS
35
71
141
V
DC blocking voltage
Operating temperature
Storage temperature
VDC
Tj
Tstg
50
-55 to 150
-55 to 150
100
-55 to 150
-55 to 150
200
-55 to 150
-55 to 150
V
°C
°C
Parameter
Symbol
Repetitive peak reverse voltage
Conditions
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Symbol
Conditions
MURT20005(R)
MURT20010(R)
MURT20020(R)
Unit
IF(AV)
TC = 140 °C
200
200
200
A
IFSM
tp = 8.3 ms, half sine
2000
2000
2000
A
Maximum instantaneous
forward voltage (per leg)
VF
IFM = 100 A, Tj = 25 °C
1.0
1.0
1.0
V
Maximum instantaneous
reverse current at rated DC
blocking voltage (per leg)
IR
Tj = 25 °C
25
25
25
μA
Tj = 125 °C
1
1
1
mA
Maximum reverse recovery
time (per leg)
Trr
IF=0.5 A, IR=1.0 A,
IRR= 0.25 A
75
75
75
nS
0.45
0.45
0.45
°C/W
Parameter
Average forward current (per
pkg)
Peak forward surge current (per
leg)
Thermal characteristics
Thermal resistance, junction case (per leg)
RΘJC
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MURT20005 thru MURT20020R
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MURT20005 thru MURT20020R
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
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