MBRT40045 thru MBRT400100R
Silicon Power
Schottky Diode
VRRM = 45 V - 100 V
IF(AV) = 400 A
Features
• High Surge Capability
• Types from 45 V to 100 V VRRM
Three Tower Package
• Isolation Type Package
• Electrically Isolated Base Plate
• Not ESD Sensitive
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MBRT40045(R) MBRT40060(R) MBRT40080(R) MBRT400100(R) Unit
Repetitive peak reverse voltage
VRRM
45
60
80
100
V
RMS reverse voltage
VRMS
32
42
56
70
V
DC blocking voltage
Operating temperature
Storage temperature
VDC
Tj
Tstg
60
-55 to 150
-55 to 150
80
-55 to 150
-55 to 150
100
-55 to 150
-55 to 150
V
°C
°C
45
-55 to 150
-55 to 150
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Symbol
Conditions
Average forward current (per
pkg)
IF(AV)
TC =125 °C
400
400
400
400
A
Peak forward surge current (per
leg)
IFSM
tp = 8.3 ms, half sine
3000
3000
3000
3000
A
Maximum instantaneous forward
voltage (per leg)
VF
IFM = 200 A, Tj = 25 °C
0.70
0.75
0.84
0.84
V
IR
Tj = 25 °C
Tj = 100 °C
1
10
1
10
1
10
1
10
mA
Tj = 150 °C
50
50
50
50
0.35
0.35
0.35
0.35
Parameter
Maximum Instantaneous reverse
current at rated DC blocking
voltage (per leg)
MBRT40045(R) MBRT40060(R) MBRT40080(R) MBRT400100(R) Unit
Thermal characteristics
Maximum thermal resistance,
junction - case (per leg)
RΘJC
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1
°C/W
MBRT40045 thru MBRT400100R
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2
MBRT40045 thru MBRT400100R
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
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3