FST7320M thru FST7340M Silicon Power Schottky Diode VRRM = 20 V - 40 V IF(AV) = 70 A Features • High Surge Capability • Types from 20 V to 40V VRRM D61-3M Package • Not ESD Sensitive Maximum ratings, at Tj = 25 °C, unless otherwise specified Conditions FST7320M FST7330M FST7335M FST7340M Parameter Symbol Repetitive peak reverse voltage VRRM 20 30 35 40 V RMS reverse voltage VRMS 14 21 25 28 V DC blocking voltage Operating temperature Storage temperature VDC Tj Tstg 30 -55 to 150 -55 to 150 35 -55 to 150 -55 to 150 40 -55 to 150 -55 to 150 V °C °C 20 -55 to 150 -55 to 150 Unit Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions FST7320M FST7330M FST7335M FST7340M Unit Average forward current (per pkg) IF(AV) TC = 125 °C 70 70 70 70 A Peak forward surge current (per leg) IFSM tp = 8.3 ms, half sine 600 600 600 600 A Maximum instantaneous forward voltage (per leg) VF IFM = 35 A, Tj = 25 °C 0.70 0.70 0.70 0.70 V Maximum Instantaneous reverse current at rated DC blocking voltage (per leg) IR Tj = 25 °C Tj = 100 °C 1 10 1 10 1 10 1 10 mA Tj = 150 °C 30 30 30 30 1.10 1.10 1.10 1.00 Thermal characteristics Thermal resistance, junction case (per leg) RΘJC www.genesicsemi.com/silicon-products/schottky-rectifiers/ 1 °C/W FST7320M thru FST7340M www.genesicsemi.com/silicon-products/schottky-rectifiers/ 2 FST7320M thru FST7340M Package dimensions and terminal configuration Product is marked with part number and terminal configuration. www.genesicsemi.com/silicon-products/schottky-rectifiers/ 3