GB01SLT12-214 Silicon Carbide Power Schottky Diode VRRM IF (Tc = 25°C) IF (Tc ≤ 150°C) QC Features Package RoHS Compliant Industry’s leading low leakage currents 175 °C maximum operating temperature Temperature independent switching behavior Superior surge current capability Positive temperature coefficient of VF Extremely fast switching speeds Superior figure of merit QC/IF = = = = 1200 V 2.5 A 1A 7 nC 1 PIN 1 2 PIN 2 SMB / DO – 214AA Advantages Applications Low standby power losses Improved circuit efficiency (Lower overall cost) Low switching losses Ease of paralleling devices without thermal runaway Smaller heat sink requirements Low reverse recovery current Low device capacitance Low reverse leakage current at operating temperature Power Factor Correction (PFC) Switched-Mode Power Supply (SMPS) Solar Inverters Wind Turbine Inverters Motor Drives Induction Heating Uninterruptible Power Supply (UPS) High Voltage Multipliers Maximum Ratings at Tj = 175 °C, unless otherwise specified Parameter Repetitive peak reverse voltage Continuous forward current Continuous forward current RMS forward current Surge non-repetitive forward current, Half Sine Wave Non-repetitive peak forward current 2 Symbol VRRM IF IF IF(RMS) IF,SM IF,max 2 ∫i dt I t value Power dissipation Operating and storage temperature Ptot Tj , Tstg Conditions Values 1200 2.5 1 2 10 8 65 0.5 0.3 42 -55 to 175 TC = 25 °C TC ≤ 150 °C TC ≤ 150 °C TC = 25 °C, tP = 10 ms TC = 150 °C, tP = 10 ms TC = 25 °C, tP = 10 µs TC = 25 °C, tP = 10 ms TC = 150 °C, tP = 10 ms TC = 25 °C Unit V A A A A A A2s W °C Electrical Characteristics at Tj = 175 °C, unless otherwise specified Parameter Symbol Diode forward voltage VF Reverse current IR Total capacitive charge QC Switching time ts Total capacitance C Conditions min. IF = 1 A, Tj = 25 °C IF = 1 A, Tj = 175 °C VR = 1200 V, Tj = 25 °C VR = 1200 V, Tj = 175 °C VR = 400 V IF ≤ IF,MAX VR = 960 V dIF/dt = 200 A/μs VR = 400 V Tj = 175 °C VR = 960 V VR = 1 V, f = 1 MHz, Tj = 25 °C VR = 400 V, f = 1 MHz, Tj = 25 °C VR = 1000 V, f = 1 MHz, Tj = 25 °C Values typ. 1.6 2.4 5 10 7 13 max. 1.8 3.7 10 100 Unit V µA nC < 17 ns 69 10 8 pF 3.6 °C/W Thermal Characteristics Thermal resistance, junction - case Aug 2014 RthJC http://www.genesicsemi.com/commercial-sic/sic-schottky-rectifiers/ Pg 1 of 4 GB01SLT12-214 Figure 1: Typical Forward Characteristics Figure 2: Typical Reverse Characteristics Figure 3: Power Derating Curve Figure 4: Current Derating Curves (D = tP/T, tP= 400 µs) (Considering worst case Zth conditions ) Figure 5: Typical Junction Capacitance vs Reverse Voltage Characteristics Figure 6: Typical Capacitive Energy vs Reverse Voltage Characteristics Aug 2014 http://www.genesicsemi.com/commercial-sic/sic-schottky-rectifiers/ Pg 2 of 4 GB01SLT12-214 Figure 7: Current vs Pulse Duration Curves at TC = 160 °C Figure 8: Transient Thermal Impedance Package Dimensions: SMB / DO-214AA PACKAGE OUTLINE NOTE 1. CONTROLLED DIMENSION IS INCH. DIMENSION IN BRACKET IS MILLIMETER. 2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS Aug 2014 http://www.genesicsemi.com/commercial-sic/sic-schottky-rectifiers/ Pg 3 of 4 GB01SLT12-214 Revision History Date 2014/08/26 2013/09/09 Revision 1 0 Comments Updated Electrical Characteristics Initial release Supersedes Published by GeneSiC Semiconductor, Inc. 43670 Trade Center Place Suite 155 Dulles, VA 20166 GeneSiC Semiconductor, Inc. reserves right to make changes to the product specifications and data in this document without notice. GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any intellectual property rights is granted by this document. Unless otherwise expressly indicated, GeneSiC products are not designed, tested or authorized for use in life-saving, medical, aircraft navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in death, personal injury and/or property damage. Aug 2014 http://www.genesicsemi.com/commercial-sic/sic-schottky-rectifiers/ Pg 4 of 4 GB01SLT12-214 SPICE Model Parameters This is a secure document. Please copy this code from the SPICE model PDF file on our website (http://www.genesicsemi.com/images/products_sic/rectifiers/GB01SLT12-214_SPICE.pdf) into LTSPICE (version 4) software for simulation of the GB01SLT12-214. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 09-SEP-2013 $ * * GeneSiC Semiconductor Inc. * 43670 Trade Center Place Ste. 155 * Dulles, VA 20166 * * COPYRIGHT (C) 2013 GeneSiC Semiconductor Inc. * ALL RIGHTS RESERVED * * These models are provided "AS IS, WHERE IS, AND WITH NO WARRANTY * OF ANY KIND EITHER EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITED * TO ANY IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A * PARTICULAR PURPOSE." * Models accurate up to 2 times rated drain current. * * Start of GB01SLT12-214 SPICE Model * .SUBCKT GB01SLT12 ANODE KATHODE R1 ANODE INT R=((TEMP-24)*0.0069); Temperature Dependant Resistor D1 INT KATHODE GB01SLT12_25C; Call the 25C Diode Model D2 ANODE KATHODE GB01SLT12_PIN; Call the PiN Diode Model .MODEL GB01SLT12_25C D + IS 7.27E-19 RS 0.592251 + N 1 IKF 407.773 + EG 1.2 XTI 3 + CJO 7.90E-11 VJ 0.367 + M 1.63 FC 0.5 + TT 1.00E-10 BV 1200 + IBV 1.00E-03 VPK 1200 + IAVE 1 TYPE SiC_Schottky + MFG GeneSiC_Semiconductor .MODEL GB01SLT12_PIN D + IS 1.08E-17 RS 1.8 + N 2.2313 IKF 999 + EG 3.23 XTI -65 + FC 0.5 TT 0 + BV 1200 IBV 1.00E-03 + VPK 1200 IAVE 1 + TYPE SiC_PiN .ENDS * * End of GB01SLT12-214 SPICE Model Sep 2013 http://www.genesicsemi.com/commercial-sic/sic-schottky-rectifiers/ Pg 1 of 1