GB100XCP12-227 IGBT/SiC Diode Co-pack VCES = ICM = VCE(SAT) = Features Package RoHS Compliant Optimal Punch Through (OPT) technology SiC freewheeling diode Positive temperature coefficient for easy paralleling Extremely fast switching speeds Temperature independent switching behavior of SiC rectifier Best RBSOA/SCSOA capability in the industry High junction temperature Industry standard packaging 2 3 3 1200 V 100 A 1.9 V 2 1 1 3 SOT – 227 Advantages Applications Industry's highest switching speeds High temperature operation Improved circuit efficiency Low switching losses Solar Inverters Aerospace Actuators Server Power Supplies Resonant Inverters > 100 kHz Inductive Heating Electronic Welders Maximum Ratings at Tj = 175 °C, unless otherwise specified Parameter Symbol Conditions Values Unit VCES IC ICM VGES TC ≤ 130 °C Limited by Tvjmax 1200 100 200 ± 20 V A A V IGBT Short Circuit SOA tpsc VCC = 900 V, VCEM ≤ 1200 V VGE ≤ 15 V, Tvj ≤ 125 ºC 10 μs Operating Temperature Storage Temperature Isolation Voltage Tvj Tstg VISOL ISOL < 1 mA, 50/60 Hz, t = 1 s -40 to +175 -40 to +175 3000 °C °C V IF IFM TC ≤ 130 ºC TC = 25 ºC, tP = 10 μs IF,SM tP = 10 ms, half sine, TC = 25 ºC 100 tbd tbd A A A RthJC RthJC IGBT SiC Diode 0.08 0.53 °C/W °C/W IGBT Collector-Emitter Voltage DC-Collector Current Peak Collector Current Gate Emitter Peak Voltage Free-wheeling Silicon Carbide diode DC-Forward Current Non Repetitive Peak Forward Current Surge Non Repetitive Forward Current Thermal Characteristics Thermal resistance, junction - case Thermal resistance, junction - case Mechanical Properties Mounting Torque Terminal Connection Torque Weight Case Color Dimensions Feb 2012 min. Md Values typ. 1.5 1.3 1.5 29 Black 38 x 25.4 x 12 http://www.genesicsemi.com/index.php/sic-products/copack max. Nm Nm g mm Pg1 of 6 GB100XCP12-227 Electrical Characteristics at Tj = 175 °C, unless otherwise specified Parameter Symbol Conditions VGE(th) ICES,25 ICES,175 IGES VCE(TO) RCE,25 RCE,175 VGE = VCE, IC = 4 mA, Tj = 25 ºC VGE = 0 V, VCE = VCES, Tj = 25 ºC VGE = 0 V, VCE = VCES, Tj = 175 ºC VCE = 0 V, VGE = 20 V, Tj = 175 ºC Tj= 25ºC VGE = 15 V, Tj = 25 ºC VGE = 15 V, Tj = 175 ºC IC = 100 A, VGE = 15 V, Tj = 25 ºC (175 ºC) min. Values typ. max. Unit IGBT Gate Threshold Voltage Collector-Emitter Leakage Current Gate-Leakage Current Collector-Emitter Threshold Voltage Collector-Emitter Slope Resistance Collector-Emitter Saturation Voltage VCE(SAT) Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Gate Resistance Cies Coes Cres RGint Gate Charge QG Module Lead Resistance Rmod Reverse Bias Safe Operating Area RBSOA Short Circuit Current Short Circuit Duration Rise Time Fall Time Turn On Delay Time Turn Off Delay Time Turn-On Energy Loss Per Pulse Turn-Off Energy Loss Per Pulse Rise Time Fall Time Turn On Delay Time Turn Off Delay Time Turn-On Energy Loss Per Pulse Turn-Off Energy Loss Per Pulse Isc tsc tr tf td(on) td(off) Eon Eoff tr tf td(on) td(off) Eon Eoff 5 6.2 0.10 3.15 -400 VGE = 0 V, VCE = 25 V, f = 1 MHz, Tj = 150 ºC VCC= 750 V, IC = 100 A, VGE= -8..15 V, Tj= 25 ºC (125 °C) Tc= 25 ºC (175 ºC) Tj=175 ºC, Rg=56Ω, VCC=1200 V, VGE=15 V Tj = 175 ºC, Rg = 56Ω, VCC = 900 V, VGE = ±15 V VCC= 800 V, IC = 100 A, Rgon = Rgoff = 10 Ω, VGE(on)= 15 V, VGE(off)= -8 V, LS = 0.8 µH, Tj= 25 ºC VCC= 800 V, IC = 100 A, Rgon = Rgoff = 10 Ω, VGE(on)= 15 V, VGE(off)= -8 V, LS = 0.8 µH, Tj= 175 ºC 7 1 400 1.1 7.9 11.4 V mA mA nA V mΩ mΩ 1.9 (2.2) V 8.55 1.39 0.25 2 nF nF nF Ω 900 (900) nC tbd mΩ 150 A 470 A μs ns ns ns ns mJ mJ ns ns ns ns mJ mJ 10 254 153 244 488 14.2 15.7 211 172 240 636 11.1 21.8 Free-wheeling Silicon Carbide Diode Forward Voltage Threshold Voltage at Diode Peak Reverse Recovery Current Reverse Recovery Time Rise Time Fall Time Turn-On Energy Loss Per Pulse Turn-Off Energy Loss Per Pulse Reverse Recovery Charge Rise Time Fall Time Turn-On Energy Loss Per Pulse Turn-Off Energy Loss Per Pulse Reverse Recovery Charge Feb 2012 VF VD(TO) Irrm trr tr tf Eon Eoff Qrr tr tf Eon Eoff Qrr IF = 100 A, VGE = 0 V, Tj = 25 ºC (175 ºC ) Tj = 25 ºC IF = 100 A, VGE = 0 V, VR = 800 V, -dIF/dt = 625 A/µs, Tj = 175 ºC VCC= 800 V, IC = 100 A, Rgon = Rgoff = 10 Ω, VGE(on)= 15 V, VGE(off)= -8 V, LS = 0.8 µH, Tj= 25 ºC VCC= 800 V, IC = 100 A, Rgon = Rgoff = 10 Ω, VGE(on)= 15 V, VGE(off)= -8 V, LS = 0.8 µH, Tj= 175 ºC http://www.genesicsemi.com/index.php/sic-products/copack 2.08 (3.5) V 0.8 10 100 148 336 218 113 730 178 268 23 334 480 V A ns ns ns μJ μJ nC ns ns μJ μJ nC Pg2 of 6 GB100XCP12-227 Figure 1: Typical Output Characteristics at 25 °C Figure 3: Typical Transfer Characteristics Figure 4: Typical Blocking Characteristics Figure 5: Typical FWD Forward Characteristics Figure 6: Typical Turn On Gate Charge Feb 2012 Figure 2: Typical Output Characteristics at 175 °C http://www.genesicsemi.com/index.php/sic-products/copack Pg3 of 6 GB100XCP12-227 Figure 7: Typical Hard-Switched IGBT Turn On Waveforms Figure 8: Typical Hard-Switched IGBT Turn Off Waveforms Figure 9: Typical Hard-Switched Free-wheeling SiC Diode Turn Off Waveforms Figure 10: Typical Hard-Switched Free-wheeling SiC Diode Turn On Waveforms Figure 11: Typical Module Energy Losses and Switching Times at IGBT Turn On vs. Temperature Figure 12: Typical Module Energy Losses and Switching Times at IGBT Turn Off vs. Temperature Feb 2012 http://www.genesicsemi.com/index.php/sic-products/copack Pg4 of 6 GB100XCP12-227 Figure 13: Typical Module Energy Losses and Switching Times at IGBT Turn On vs. Current Figure 14: Typical Module Energy Losses and Switching Times at IGBT Turn Off vs. Current Figure 15: Typical Hard-Switched Reverse Recovery Charge vs. Temperature Figure 16: Typical C-V Characteristics Feb 2012 http://www.genesicsemi.com/index.php/sic-products/copack Pg5 of 6 GB100XCP12-227 Package Dimensions: SOT-227 PACKAGE OUTLINE NOTE 1. CONTROLLED DIMENSION IS INCH. DIMENSION IN BRACKET IS MILLIMETER. 2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS Revision History Date Revision Comments 2013/02/08 2 Updated Electrical Characteristics 2012/07/30 1 Second generation release 2011/01/06 0 Initial release Supersedes GA100XCP12-227 Published by GeneSiC Semiconductor, Inc. 43670 Trade Center Place Suite 155 Dulles, VA 20166 GeneSiC Semiconductor, Inc. reserves right to make changes to the product specifications and data in this document without notice. GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any intellectual property rights is granted by this document. Unless otherwise expressly indicated, GeneSiC products are not designed, tested or authorized for use in life-saving, medical, aircraft navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in death, personal injury and/or property damage. Feb 2012 http://www.genesicsemi.com/index.php/sic-products/copack Pg6 of 6