GAP3SLT33-214 - GeneSiC Semiconductor

GAP3SLT33-214
Silicon Carbide Power
Schottky Diode
VRRM
IF (Tc ≤ 125°C)
QC
Features
Package






 RoHS Compliant
Industry’s leading low leakage currents
175 °C maximum operating temperature
Electrically isolated base-plate
Positive temperature coefficient of VF
Fast switching speeds
Superior figure of merit QC/IF
1
=
=
=
3300 V
0.3 A
20 nC
PIN 1
PIN 2
2
SMB / DO – 214AA
Advantages
Applications
 Low reverse leakage current at operating temperature
 Improved circuit efficiency (Lower overall cost)
 Significantly reduced switching losses compare to Si PiN
diodes
 Ease of paralleling devices without thermal runaway
 Smaller heat sink requirements
 Low reverse recovery current
 Low device capacitance
 Down Hole Oil Drilling, Geothermal Instrumentation
 High Voltage Multipliers
 Military Power Supplies
Maximum Ratings at Tj = 175 °C, unless otherwise specified
Parameter
Repetitive peak reverse voltage
Continuous forward current
RMS forward current
Surge non-repetitive forward current, Half Sine
Wave
Non-repetitive peak forward current
I2t value
Power dissipation
Operating and storage temperature
Symbol
VRRM
IF
IF(RMS)
IF,SM
IF,max
∫i2 dt
Ptot
Tj , Tstg
Conditions
Values
3300
0.3
0.35
2
1
10
0.1
25
-55 to 175
TC ≤ 125 °C
TC ≤ 125 °C
TC = 25 °C, tP = 10 ms
TC = 125 °C, tP = 10 ms
TC = 25 °C, tP = 10 µs
TC = 25 °C, tP = 10 ms
TC = 25 °C
Unit
V
A
A
A
A
A2S
W
°C
Electrical Characteristics at Tj = 175 °C, unless otherwise specified
Parameter
Symbol
Diode forward voltage
VF
Reverse current
IR
Total capacitive charge
QC
Switching time
ts
Total capacitance
C
Conditions
min.
IF = 0.3 A, Tj = 25 °C
IF = 0.3 A, Tj = 175 °C
VR = 3300 V, Tj = 25 °C
VR = 3300 V, Tj = 175 °C
IF ≤ IF,MAX
VR = 1500 V
dIF/dt = 35 A/μs
VR = 1500 V
Tj = 175 °C
VR = 1 V, f = 1 MHz, Tj = 25 °C
VR = 400 V, f = 1 MHz, Tj = 25 °C
VR = 1000 V, f = 1 MHz, Tj = 25 °C
Values
typ.
1.7
4.0
1
10
20
< 60
42
8
7
max.
2.2
5.0
10
100
Unit
V
µA
nC
ns
pF
Thermal Characteristics
Thermal resistance, junction – Cu lead frame
Dec 2014
RthJC
http://www.genesicsemi.com/commercial-sic/sic-schottky-rectifiers/
1.42
°C/W
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GAP3SLT33-214
Figure 1: Typical Forward Characteristics
Figure 2: Typical Reverse Characteristics
Figure 3: Power Derating Curve
Figure 4: Current Derating Curves (D = tp/T, tp = 400 µs)
(Considering worst case Zth conditions)
Figure 5: Typical Junction Capacitance vs Reverse
Voltage Characteristics
Figure 6: Typical Capacitive Energy vs Reverse Voltage
Characteristics
Dec 2014
http://www.genesicsemi.com/commercial-sic/sic-schottky-rectifiers/
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GAP3SLT33-214
Figure 7: Current vs Pulse Duration Curves at TC = 150 °C
Figure 8: Transient Thermal Impedance
Package Dimensions:
SMB / DO-214AA
PACKAGE OUTLINE
01S33
XXXXX
Cathode Band
NOTE
1. CONTROLLED DIMENSION IS INCH. DIMENSION IN BRACKET IS MILLIMETER.
2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS
3. CONTROLLED LEAD COPLANARITY <D> 0.004 INCH MAXIMUM
Dec 2014
http://www.genesicsemi.com/commercial-sic/sic-schottky-rectifiers/
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GAP3SLT33-214
Revision History
Date
2014/12/19
Revision
2
Comments
Updated Electrical Characteristics
2014/08/26
2013/09/09
1
0
Updated Electrical Characteristics
Initial Release
Supersedes
Published by
GeneSiC Semiconductor, Inc.
43670 Trade Center Place Suite 155
Dulles, VA 20166
GeneSiC Semiconductor, Inc. reserves right to make changes to the product specifications and data in this document without notice.
GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any
intellectual property rights is granted by this document.
Unless otherwise expressly indicated, GeneSiC products are not designed, tested or authorized for use in life-saving, medical, aircraft
navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in death, personal
injury and/or property damage.
Dec 2014
http://www.genesicsemi.com/commercial-sic/sic-schottky-rectifiers/
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GAP3SLT33-214
SPICE Model Parameters
This is a secure document. Please copy this code from the SPICE model PDF file on our website
(http://www.genesicsemi.com/images/products_sic/rectifiers/GAP3SLT33-214_SPICE.pdf)
into
LTSPICE (version 4) software for simulation of the GAP3SLT33-214.
*
MODEL OF GeneSiC Semiconductor Inc.
*
*
$Revision:
1.0
$
*
$Date:
09-SEP-2013
$
*
*
GeneSiC Semiconductor Inc.
*
43670 Trade Center Place Ste. 155
*
Dulles, VA 20166
*
*
COPYRIGHT (C) 2013 GeneSiC Semiconductor Inc.
*
ALL RIGHTS RESERVED
*
* These models are provided "AS IS, WHERE IS, AND WITH NO WARRANTY
* OF ANY KIND EITHER EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITED
* TO ANY IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A
* PARTICULAR PURPOSE."
* Models accurate up to 2 times rated drain current.
*
* Start of GAP3SLT33-214 SPICE Model
*
.SUBCKT GAP3SLT33 ANODE KATHODE
R1 ANODE INT R=((TEMP-24)*0.0535); Temperature Dependant Resistor
D1 INT KATHODE GAP3SLT33_25C; Call the 25C Diode Model
D2 ANODE KATHODE GAP3SLT33_PIN; Call the PiN Diode Model
.MODEL GAP3SLT33_25C D
+ IS
1.39E-14
RS
2.88
+ N
1.0120127
IKF
36.05007504
+ EG
1.2
XTI
-3
+ CJO
6.01E-11
VJ
0.924257443
+ M
0.3084545
FC
0.5
+ TT
1.00E-10
BV
3300
+ IBV
1.00E-03
VPK
3300
+ IAVE
3.00E-01
TYPE
SiC_Schottky
+ MFG
GeneSiC_Semiconductor
.MODEL GAP3SLT33_PIN D
+ IS
178.99E-18
RS
15
+ N
5
EG
3.23
+ XTI
50
FC
0.5
+ TT
0
BV
3300
+ IBV
1.00E-03
VPK
3300
+ IAVE
3.00E-01
TYPE
SiC_PiN
.ENDS
* End of GAP3SLT33-214 SPICE Model
Sep 2013
http://www.genesicsemi.com/commercial-sic/sic-schottky-rectifiers/
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