1N8034-GA High Temperature Silicon Carbide Power Schottky Diode VRRM IF (Tc=25°C) QC Features Package RoHS Compliant 650 V Schottky rectifier 250 °C maximum operating temperature Electrically isolated base-plate Zero reverse recovery charge Superior surge current capability Positive temperature coefficient of VF Temperature independent switching behavior Lowest figure of merit QC/IF Available screened to Mil-PRF-19500 = = = 650 V 30 A 66 nC PIN 1 PIN 2 NC PIN 3 1 2 3 TO – 257 (Isolated Base-plate Hermetic Package) Advantages Applications High temperature operation Improved circuit efficiency (Lower overall cost) Low switching losses Ease of paralleling devices without thermal runaway Smaller heat sink requirements Industry’s lowest reverse recovery charge Industry’s lowest device capacitance Ideal for output switching of power supplies Best in class reverse leakage current at operating temperature Down Hole Oil Drilling Geothermal Instrumentation Solenoid Actuators General Purpose High-Temperature Switching Amplifiers Solar Inverters Switched-Mode Power Supply (SMPS) Power Factor Correction (PFC) Maximum Ratings at Tj = 250 °C, unless otherwise specified Parameter Repetitive peak reverse voltage Continuous forward current Continuous forward current RMS forward current Surge non-repetitive forward current, Half Sine Wave Non-repetitive peak forward current I2t value Power dissipation Operating and storage temperature Symbol VRRM IF IF IF(RMS) Conditions IF,SM IF,max ∫i2 dt Ptot Tj , Tstg TC = 25 °C TC ≤ 225 °C TC ≤ 225 °C Values 650 30 9.4 16 Unit V A A A TC = 25 °C, tP = 10 ms 140 A TC = 25 °C, tP = 10 µs 650 98 208 -55 to 250 A A2S W °C TC = 25 °C, tP = 10 ms TC = 25 °C Electrical Characteristics at Tj = 250 °C, unless otherwise specified Parameter Symbol Diode forward voltage VF Reverse current IR Total capacitive charge QC Switching time ts Total capacitance C Conditions IF = 10 A, Tj = 25 °C IF = 10 A, Tj = 210 °C VR = 650 V, Tj = 25 °C VR = 650 V, Tj = 250 °C IF ≤ IF,MAX VR = 400 V dIF/dt = 200 A/μs VR = 400 V Tj = 210 °C VR = 1 V, f = 1 MHz, Tj = 25 °C VR = 400 V, f = 1 MHz, Tj = 25 °C VR = 650 V, f = 1 MHz, Tj = 25 °C min. Values typ. 1.3 1.8 1 50 66 < 49 1107 103 99 max. Unit V 5 200 µA nC ns pF Thermal Characteristics Thermal resistance, junction - case RthJC 1.08 °C/W 0.6 Nm Mechanical Properties Mounting torque Dec 2014 M http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-schottky-rectifiers/ Pg 1 of 4 1N8034-GA Figure 1: Typical Forward Characteristics Figure 2: Typical Reverse Characteristics Figure 3: Power Derating Curve Figure 4: Current Derating Curves (D = tP/T, tP= 400 µs) (Considering worst case Zth conditions ) Figure 5: Typical Junction Capacitance vs Reverse Voltage Characteristics Figure 6: Typical Switching Energy vs Reverse Voltage Characteristics Dec 2014 http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-schottky-rectifiers/ Pg 2 of 4 1N8034-GA Figure 7: Current vs Pulse Duration Curves at TC = 225 °C Figure 8: Transient Thermal Impedance Package Dimensions: TO-257 PACKAGE OUTLINE NOTE 1. CONTROLLED DIMENSION IS INCH. DIMENSION IN BRACKET IS MILLIMETER. 2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS Dec 2014 http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-schottky-rectifiers/ Pg 3 of 4 1N8034-GA Revision History Date 2014/08/26 2012/04/24 Revision 1 0 Comments Updated Electrical Characteristics Initial release Supersedes Published by GeneSiC Semiconductor, Inc. 43670 Trade Center Place Suite 155 Dulles, VA 20166 GeneSiC Semiconductor, Inc. reserves right to make changes to the product specifications and data in this document without notice. GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any intellectual property rights is granted by this document. Unless otherwise expressly indicated, GeneSiC products are not designed, tested or authorized for use in life-saving, medical, aircraft navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in death, personal injury and/or property damage. Dec 2014 http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-schottky-rectifiers/ Pg 4 of 4 1N8034-GA SPICE Model Parameters Copy the following code into a SPICE software program for simulation of the 1N8034-GA device. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * * GeneSiC Semiconductor Inc. * 43670 Trade Center Place Ste. 155 * Dulles, VA 20166 * http://www.genesicsemi.com/index.php/hit-sic/schottky * * COPYRIGHT (C) 2013 GeneSiC Semiconductor Inc. * ALL RIGHTS RESERVED * * These models are provided "AS IS, WHERE IS, AND WITH NO WARRANTY * OF ANY KIND EITHER EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITED * TO ANY IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A * PARTICULAR PURPOSE." * Models accurate up to 2 times rated drain current. * * Start of 1N8034-GA SPICE Model * .SUBCKT 1N8034 ANODE KATHODE D1 ANODE KATHODE 1N8034_25C; Call the Schottky Diode Model D2 ANODE KATHODE 1N8034_PIN; Call the PiN Diode Model .MODEL 1N8034_25C D + IS 8.46E-17 RS 0.0319 + N 1 IKF 1000 + EG 1.2 XTI 3 + TRS1 0.0038 TRS2 3.00E-05 + CJO 1.26E-09 VJ 0.438 + M 1.5278 FC 0.5 + TT 1.00E-10 BV 650 + IBV 1.00E-03 VPK 650 + IAVE 20 TYPE SiC_Schottky + MFG GeneSiC_Semiconductor .MODEL 1N8034_PIN D + IS 2.77E-10 RS 0.086693 + N 3.3505 IKF 3.67E-06 + EG 3.23 XTI -10 + FC 0.5 TT 0 + BV 650 IBV 1.00E-03 + VPK 650 IAVE 20 + TYPE SiC_PiN .ENDS * * End of 1N8034-GA SPICE Model Dec 2014 http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-schottky-rectifiers/ Page 1 of 1