GAP3SLT33-220FP Silicon Carbide Power Schottky Diode VRRM IF (Tc ≤ 125°C) QC Features Package RoHS Compliant Industry’s leading low leakage currents 175 °C maximum operating temperature Electrically isolated base-plate Positive temperature coefficient of VF Fast switching speeds Superior figure of merit QC/IF = = = 3300 V 0.3 A 20 nC PIN 1 2 PIN 2 1 TO – 220FP (Isolated Base-plate Package) Advantages Applications Low standby power losses Improved circuit efficiency (Lower overall cost) Significantly reduced switching losses compare to Si PiN diodes Ease of paralleling devices without thermal runaway Smaller heat sink requirements Low reverse recovery current Low device capacitance Down Hole Oil Drilling, Geothermal Instrumentation High Voltage Multipliers Military Power Supplies Maximum Ratings at Tj = 175 °C, unless otherwise specified Parameter Repetitive peak reverse voltage Continuous forward current RMS forward current Surge non-repetitive forward current, Half Sine Wave Non-repetitive peak forward current I2t value Power dissipation Operating and storage temperature Symbol VRRM IF IF(RMS) IF,SM IF,max ∫i2 dt Ptot Tj , Tstg Conditions Values 3300 0.3 0.35 2 1 10 0.1 89 -55 to 175 TC ≤ 125 °C TC ≤ 125 °C TC = 25 °C, tP = 10 ms TC = 125 °C, tP = 10 ms TC = 25 °C, tP = 10 µs TC = 25 °C, tP = 10 ms TC = 25 °C Unit V A A A A A2S W °C Electrical Characteristics at Tj = 175 °C, unless otherwise specified Parameter Symbol Diode forward voltage VF Reverse current IR Total capacitive charge QC Switching time ts Total capacitance C Conditions min. IF = 0.3 A, Tj = 25 °C IF = 0.3 A, Tj = 175 °C VR = 3300 V, Tj = 25 °C VR = 3300 V, Tj = 175 °C IF ≤ IF,MAX VR = 1500 V dIF/dt = 35 A/μs VR = 1500 V Tj = 175 °C VR = 1 V, f = 1 MHz, Tj = 25 °C VR = 400 V, f = 1 MHz, Tj = 25 °C VR = 1000 V, f = 1 MHz, Tj = 25 °C Values typ. 1.7 4.0 1 10 20 < 60 42 8 7 max. 2.2 5.0 10 100 Unit V µA nC ns pF Thermal Characteristics Thermal resistance, junction – Cu lead frame RthJC 1.69 °C/W 0.6 Nm Mechanical Properties Mounting torque, M3 screw Dec 2014 M http://www.genesicsemi.com/commercial-sic/sic-schottky-rectifiers/ Pg 1 of 4 GAP3SLT33-220FP Figure 1: Typical Forward Characteristics Figure 2: Typical Reverse Characteristics Figure 3: Power Derating Curve Figure 4: Current Derating Curves (D = tp/T, tp = 400 µs) (Considering worst case Zth conditions) Figure 5: Typical Junction Capacitance vs Reverse Voltage Characteristics Figure 6: Typical Capacitive Energy vs Reverse Voltage Characteristics Dec 2014 http://www.genesicsemi.com/commercial-sic/sic-schottky-rectifiers/ Pg 2 of 4 GAP3SLT33-220FP Figure 7: Current vs Pulse Duration Curves at TC = 150 °C Figure 8: Transient Thermal Impedance Package Dimensions: TO-220FP PACKAGE OUTLINE 0.392 (9.96) 0.408 (10.36) Ø 0.117 (2.98) Ref. 0.133 (3.38) 0.178 (4.53) 0.194 (4.93) 0.099 (2.52) 0.101 (2.56) 0.256 0.272 (6.50) (6.90) 0.617 0.633 (15.67) (16.07) GAP3SLT33-220FP XXXXXX Lot Code 0.101 (2.56) 0.117 (2.96) 0.028 (0.71) 0.036 (0.91) 0.100 BSC. (2.540) BSC. 0.487 (12.37) 0.503 (12.77) 0.014 (0.36) 0.020 (0.52) NOTE 1. CONTROLLED DIMENSION IS INCH. DIMENSION IN BRACKET IS MILLIMETER. 2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS 3. CONTROLLED LEAD COPLANARITY <D> 0.004 INCH MAXIMUM Dec 2014 http://www.genesicsemi.com/commercial-sic/sic-schottky-rectifiers/ Pg 3 of 4 GAP3SLT33-220FP Revision History Date 2014/12/19 Revision 3 Comments Updated Electrical Characteristics 2014/08/26 2013/03/22 2013/01/23 2 1 0 Updated Electrical Characteristics Added Thermal Characteristics Initial Release Supersedes Published by GeneSiC Semiconductor, Inc. 43670 Trade Center Place Suite 155 Dulles, VA 20166 GeneSiC Semiconductor, Inc. reserves right to make changes to the product specifications and data in this document without notice. GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any intellectual property rights is granted by this document. Unless otherwise expressly indicated, GeneSiC products are not designed, tested or authorized for use in life-saving, medical, aircraft navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in death, personal injury and/or property damage. Dec 2014 http://www.genesicsemi.com/commercial-sic/sic-schottky-rectifiers/ Pg 4 of 4 GAP3SLT33-220FP SPICE Model Parameters This is a secure document. Please copy this code from the SPICE model PDF file on our website (http://www.genesicsemi.com/images/products_sic/rectifiers/GAP3SLT33-220FP_SPICE.pdf) into LTSPICE (version 4) software for simulation of the GAP3SLT33-220FP. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 04-SEP-2013 $ * * GeneSiC Semiconductor Inc. * 43670 Trade Center Place Ste. 155 * Dulles, VA 20166 * * COPYRIGHT (C) 2013 GeneSiC Semiconductor Inc. * ALL RIGHTS RESERVED * * These models are provided "AS IS, WHERE IS, AND WITH NO WARRANTY * OF ANY KIND EITHER EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITED * TO ANY IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A * PARTICULAR PURPOSE." * Models accurate up to 2 times rated drain current. * * Start of GAP3SLT33-220FP SPICE Model * .SUBCKT GAP3SLT33 ANODE KATHODE R1 ANODE INT R=((TEMP-24)*0.0535); Temperature Dependant Resistor D1 INT KATHODE GAP3SLT33_25C; Call the 25C Diode Model D2 ANODE KATHODE GAP3SLT33_PIN; Call the PiN Diode Model .MODEL GAP3SLT33_25C D + IS 1.39E-14 RS 2.88 + N 1.0120127 IKF 36.05007504 + EG 1.2 XTI -3 + CJO 6.01E-11 VJ 0.924257443 + M 0.3084545 FC 0.5 + TT 1.00E-10 BV 3300 + IBV 1.00E-03 VPK 3300 + IAVE 3.00E-01 TYPE SiC_Schottky + MFG GeneSiC_Semiconductor .MODEL GAP3SLT33_PIN D + IS 178.99E-18 RS 15 + N 5 EG 3.23 + XTI 50 FC 0.5 + TT 0 BV 3300 + IBV 1.00E-03 VPK 3300 + IAVE 3.00E-01 TYPE SiC_PiN .ENDS * End of GAP3SLT33-220FP SPICE Model Sep 2013 http://www.genesicsemi.com/commercial-sic/sic-schottky-rectifiers/ Pg1 of 1