GAP05SLT80-220 Silicon Carbide Power Schottky Diode VRRM IF QC Features Package RoHS Compliant Industry’s leading low leakage currents 175 °C maximum operating temperature Positive temperature coefficient of VF Extremely fast switching speeds Superior figure of merit QC/IF = = = 8000 V 50 mA 8 nC PIN 1 2 1 PIN 2 Advantages Applications Low reverse leakage current at operating temperature Improved circuit efficiency (Lower overall cost) Low switching losses Ease of paralleling devices without thermal runaway Smaller heat sink requirements Low reverse recovery current Low device capacitance Low reverse leakage current at operating temperature Voltage Multiplier Ignition/Trigger Circuits Oil/Downhole Lighting Defense Electrical Specifications Absolute Maximum Ratings Parameter Repetitive peak reverse voltage Continuous forward current RMS forward current Power dissipation Operating and storage temperature Symbol VRRM IF IF(RMS) Ptot Tj , Tstg Conditions Values 8000 50 87 0.2 -55 to 175 TC = 25 °C Unit V mA mA W °C Electrical Characteristics Parameter Symbol Diode forward voltage VF Reverse current IR Total capacitance C Sep 2014 Conditions IF = 50 mA, Tj = 25 °C IF = 50 mA, Tj = 175 °C VR = 8000 V, Tj = 25 °C VR = 8000 V, Tj = 125 °C VR = 1 V, f = 1 MHz, Tj = 25 °C VR = 400 V, f = 1 MHz, Tj = 25 °C VR = 1000 V, f = 1 MHz, Tj = 25 °C min. Values typ. 4.6 12 3.8 5.3 25 8 6 http://www.genesicsemi.com/commercial-sic/sic-schottky-rectifiers/ max. Unit V µA pF Page 1 of 3 GAP05SLT80-220 Figure 1: Typical Forward Characteristics Figure 2: Typical Reverse Characteristics Figure 3: Typical Junction Capacitance vs Reverse Voltage Characteristics Sep 2014 http://www.genesicsemi.com/commercial-sic/sic-schottky-rectifiers/ Page 2 of 3 GAP05SLT80-220 Package Dimensions: PACKAGE OUTLINE 0.440 (11.18) 0.052 (1.32) 0.036 (0.91) K A 0.280 (7.11) GAP05SLT80 0.085 (2.16) 0.570 (14.48) XXXXXX Lot Code 0.052 (1.32) 0.036 (0.91) 0.360 (9.14) 0.360 (9.14) 0.570 (14.48) 0.570 (14.48) 0.25 (6.35) 0.016 (0.41) 0.016 (0.41) 0.080 (2.03) 0.080 (2.03) 0.180 (4.57) NOTE 1. CONTROLLED DIMENSION IS INCH. DIMENSION IN BRACKET IS MILLIMETER. 2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS Revision History Date 2014/09/15 Revision 1 Comments Initial Release Supersedes Published by GeneSiC Semiconductor, Inc. 43670 Trade Center Place Suite 155 Dulles, VA 20166 GeneSiC Semiconductor, Inc. reserves right to make changes to the product specifications and data in this document without notice. GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any intellectual property rights is granted by this document. Unless otherwise expressly indicated, GeneSiC products are not designed, tested or authorized for use in life-saving, medical, aircraft navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in death, personal injury and/or property damage. Sep 2014 http://www.genesicsemi.com/commercial-sic/sic-schottky-rectifiers/ Page 3 of 3 GAP05SLT80-220 SPICE Model Parameters This is a secure document. Please copy this code from the SPICE model PDF file on our website (http://www.genesicsemi.com/images/products_sic/rectifiers/GAP05SLT80-220_SPICE.pdf) into LTSPICE (version 4) software for simulation of the GAP05SLT80-220. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.1 $ * $Date: 15-SEP-2014 $ * * GeneSiC Semiconductor Inc. * 43670 Trade Center Place Ste. 155 * Dulles, VA 20166 * * COPYRIGHT (C) 2014 GeneSiC Semiconductor Inc. * ALL RIGHTS RESERVED * * These models are provided "AS IS, WHERE IS, AND WITH NO WARRANTY * OF ANY KIND EITHER EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITED * TO ANY IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A * PARTICULAR PURPOSE." * Models accurate up to 2 times rated drain current. * * Start of GAP05SLT80-220 SPICE Model .SUBCKT GAP05SLT80_220 ANODE KATHODE R1 ANODE INT R=((TEMP-24)*0.81); Temperature Dependant Resistor D1 INT KATHODE GAP05SLT80_220_25C .MODEL GAP05SLT80_220_25C D; Model of GAP05SLT80-220 Device at 25 C + IS 14.067E-15 + N 1.3760 + RS 42.6 + IKF 157.39E-6 + EG 1.2 + XTI -85 + CJO 21.838E-12 + M 0.258 + VJ 3.198 + BV 9000 + IBV 1E-3 + TT 1.0000E-10 + VPK 8000 + IAVE 3E-2 + TYPE SiC_Schottky + MFG GeneSiC_Semiconductor .ENDS * * End of GAP05SLT80-220 SPICE Model Sep 2014 http://www.genesicsemi.com/commercial-sic/sic-schottky-rectifiers Page 1 of 1