KBJ2506G thru KBJ2510G Silicon Bridge Rectifier VRRM = 50 V - 1000 V IF = 25 A Features • Types up to 1000 V VRRM KBJ Package • Ideal for printed circuit board • Low forward voltage drop, high current capability • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Reliable, low cost construction utilizing molded plastic technique Maximum ratings, at Tj = 25 °C, unless otherwise specified KBJ2506G KBJ2508G KBJ2510G Unit VRRM 600 800 1000 V RMS reverse voltage VRMS 420 560 700 V DC blocking voltage VDC 600 800 1000 V Parameter Symbol R Repetitive titi peakk reverse voltage lt Continuous forward current IF Surge non-repetitive forward current, Half Sine Wave IF,SM Operating temperature Storage temperature Tj Tstg Conditions TC ≤ 110°C, with heatsink 25 25 25 TC ≤ 110°C, without heatsink 4.2 4.2 4.2 TC = 25 °C, tp = 8.3 ms 350 350 350 A -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 °C °C Conditions KBJ2506G KBJ2508G KBJ2510G Unit IF = 12.5 A, Tj = 25 °C VR = 50 V, Tj = 25 °C VR = 50 V, Tj = 125 °C 1.05 10 500 1.05 10 500 1.05 10 500 V 0.6 0.6 0.6 A Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Diode forward voltage VF Reverse current IR μA Thermal characteristics Thermal resistance, junction case www.genesicsemi.com RthJA 1 °C/W KBJ2506G thru KBJ2510G www.genesicsemi.com 2