MUR10005CT thru MUR10020CTR Silicon Super Fast Recovery Diode VRRM = 50 V - 600 V IF = 100 A Features • High Surge Capability • Types up to 600 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Repetitive p p peak reverse voltage RMS reverse voltage DC blocking voltage MUR10005CT (R) MUR10010CT (R) MUR10020CT (R) Unit VRRM 50 100 200 V VRMS 35 70 140 V VDC 50 100 200 V Symbol Conditions Continuous forward current IF TC ≤ 140 °C 100 100 100 A Surge non-repetitive forward current, Half Sine Wave IF,SM TC = 25 °C, tp = 8.3 ms 400 400 400 A Operating temperature Storage temperature Tj Tstg -40 to 175 -40 to 175 -40 to 175 -40 to 175 -40 to 175 -40 to 175 °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Diode forward voltage Reverse current Symbol Conditions MUR10005CT (R) MUR10010CT (R) MUR10020CT (R) Unit VF IF = 50 A, Tj = 25 °C VR = 50 V, Tj = 25 °C VR = 50 V, Tj = 125 °C 1.3 25 1 1.3 25 1 1.3 25 1 μA mA IF=0.5 A, IR=1.0 A, IRR= 0.25 A 75 75 75 nS IR V Recovery Time Maximum reverse recovery time www.genesicsemi.com TRR 1 MUR10005CT thru MUR10020CTR www.genesicsemi.com 2