KBPC3506T/W thru KBPC3510T/W Silicon Bridge Rectifier VRRM = 50 V - 1000 V IF = 35 A Features • High efficiency • Types up to 1000 V VRRM KBPC-T/W Package • Silicon junction • Metal case Mechanical Data Case: Mounted in the bridge encapsulation Mounting position: Hole for #10 screw Polarity: Marked on case Maximum ratings, at Tj = 25 °C, unless otherwise specified (KBPCXXXXT uses KBPC-T package while KBPCXXXXW uses KBPC-W package) Conditions KBPC3506T/W KBPC3508T/W KBPC3510T/W Unit VRRM 600 800 1000 V RMS reverse voltage VRMS 420 560 700 V DC blocking voltage VDC 600 800 1000 V Parameter Symbol Repetitive peak reverse voltage Continuous forward current IF TC ≤ 55 °C 35 35 35 A Surge non-repetitive forward current, Half Sine Wave IF,SM TC = 25 °C, tp = 8.3 ms 400 400 400 A Operating temperature Storage temperature Tj Tstg -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Diode forward voltage VF Reverse current IR Conditions KBPC3506T/W KBPC3508T/W KBPC3510T/W Unit IF = 17.5 A, Tj = 25 °C VR = 50 V, Tj = 25 °C VR = 50 V, Tj = 100 °C 1.1 5 500 1.1 5 500 1.1 5 500 V 1.4 1.4 1.4 μA Thermal characteristics Thermal resistance, junction case www.genesicsemi.com RthJC 1 °C/W KBPC3506T/W thru KBPC3510T/W www.genesicsemi.com 2