ATJM Photovoltaic Cell Advanced Triple-Junction with Monolothic Diode Solar Cell for Space Applications DATASHEET | SEPTEMBER 2012 SPACE PHOTOVOLTAICS 27.0% Minimum Average Efficiency Features & Characteristics Advanced Triple-Junction (ATJ) InGAP/InGaAs/Ge Solar Cells with n-on-p Polarity on 140-µm Uniform Thickness Substrate Fully space-qualified with proven flight heritage in LEO and GEO environments Fully Space-Qualified Monolithic Bypass Diode Protection Typical Performance Data Lowest solare cell mass of 84 mg/cm2 Solar Cell Electrical Output Parameters Electrical Parameters @ AMO (135.3 mW/ cm2) 27% Voc 2.575V Jsc 16.9 mA/cm2 Vmp 2.285V Jmp 16.0 mA/cm7 Excellent radiation resistance with P/Po = 0.89 @ 1-MeV, 5E14 e/cm2 fluence Excellent Mechanical Strenght for Rduced Attrition during Assembly and Laydown Weldable or Solderable contacts Monolithic Diode Electrical Performance Available at EPI, cell, CIC or panel configuration VRB<2.0V @ IRB 500 mA, 28°C IRB<50 μA @ VRB 2.5V (Dark), 28°C IRB<200 μA @ VRB 2.5V (Illuminated), 28°C IRB<10 μA @ VRB 2.5V (Dark), -150°C IRB<1 μA @ VRB 2.5V (Dark), +120°C Standard and Custom Sizes Available Typical Current (I) / Voltage (V) Plot 1.0 ATJM Cell Structure Monolithic Diode p/n –I nGaAs n/p –I nGaP Junction Current (I) 0.5 -2.0 -1.0 -0.5 Voc : Isc : FF : Efficiency : 0 2570 mV 466 mA 0.84 27.0% 1.0 2.0 3.0 -0.5 InGaAs Junction -1.0 Ge Junction -1.5 Darkness Illumination Solar Cell Area = 27.5 cm² Voltage (V) Ge Substrate Schematic Cross-Sectional View Copyright © 2008 Emcore| REV Corporation © 2012 EMCORE Corporation 2012.09 505 332 5000 505-332-5000 505 332 5100 505-332-5100 [email protected] [email protected] www.emcore.com www.emcore.com Information contained herein is deemed to be reliable and accurate as of the issue date. EMCORE reserves the right to change the design or specifications at any time without notice. ATJM Photovoltaic Cell Advanced Triple-Junction with Monolothic Diode Solar Cell for Space Applications DATASHEET | SEPTEMBER 2012 SPACE PHOTOVOLTAICS Radiation Performance at 1 MeV Electron Irradiation, EOL/BOL Ratios Temperature Coefficients Fluence (e/cm2) Fluence (e/cm ) Voc Isc Vmp Imp Pmp Efficiency 5E 13 0.97 1.00 0.97 1.00 0.97 0.97 2 1E 14 0.96 1.00 0.96 1.00 0.96 0.96 5E 14 0.92 0.98 0.92 0.96 0.89 0.89 1E 15 0.90 0.96 0.90 0.94 0.85 0.85 3E 15 0.86 0.90 0.85 0.87 0.74 0.74 ∆Voc/∆T (mV/oC) Jsc/∆T(1) (μA/oCcm2) Vm/∆T (mV/oC) Jmp/∆T(2) (μA/oCcm2) BOL -5.48 +12 -5.93 +11 5E 13 -5.49 +10 -5.68 +7 1E 14 -5.46 +11 -5.66 +7 5E 14 -5.61 +12 -5.92 +12 1E 15 -5.77 +12 -6.14 +13 (1) Jsc is the symbol for normalized Isc (2) Jmp is the symbol for normalized Imp Key Space Qualification Results Test Performed Industry Quality Standard Typical Test Results Metal Contact Thickness 4-10 μm 6 μm Dark Current Degradation after reverse bias ∆Ispec<2% <0.4% Electrical performance after 2,000 thermal cycles -180oC to +95oC <2% <0.7% High-Temperature Anneal at 200oC for >5,000 hrs. <2% No measurable difference Contact pull strength >300 grams >600 grams Electrical performance degradation after 40 day humidity exposure at 60oC and 95% relative humidity <1.5% No measurable difference About EMCORE Corporation EMCORE Photovoltaics Albuquerque, NM Incorporated in 1984 Appx. 1000 Employees Nasdaq: EMKR Regulatory EMCORE CORPORATION ISO 9001 CERTIFIED Copyright © 2008 Emcore| REV Corporation © 2012 EMCORE Corporation 2012.09 505 332 5000 505-332-5000 505 332 5100 505-332-5100 EMCORE PHOTOVOLTAICS AS9100 CERTIFIED [email protected] [email protected] www.emcore.com www.emcore.com Information contained herein is deemed to be reliable and accurate as of the issue date. EMCORE reserves the right to change the design or specifications at any time without notice.