MA02303GJ RF Power Amplifier IC for 2.4 GHz ISM Features Functional Schematic • Perfect for 802.11B, HOP, SWAP, HOMERF, Bluetooth, WDECT, MDS, MMDS • Single Positive Supply • Power Added Efficiency As High As 55 Percent • IP3 = +43 dBm • Output Power 26.5 dBm @ 3.3 V • Output Power 28.5 dBm @ 5.0 V • 100 Percent Duty Cycle • 2200 to 2600 MHz Operation • 8 Pin MSOP Full Downset Plastic Package • Operates Over Wide Ranges of Supply Voltage • Self-Aligned MSAG®-Lite MESFET Process PIN 8 PIN 1 PIN Configuration Description PIN The MA02303GJ is an RF power amplifier based on M/A-COM’s Self-Aligned MSAG MESFET Process. This product is designed for use in 2.4 GHz ISM products. For booster applications, it features a low power “bypass” mode and output power control Ordering Information Part Number Description MA02303GJ-R7 7 inch, 1000 piece reel MA02303GJ-R13 13 inch, 3000 piece reel MA02303GJ-SMB Sample test board Function Description 1 VD1 Drain voltage, first stage 2 RFIN / VG1 3 GND RF input and drain voltage for first stage Ground 4 VG2 5 VG3 6 GND 7 RFOUT / VD3 8 VD2 Gate bias voltage, second stage Gate bias voltage, third stage Ground RF output and drain voltage for third stage Drain voltage for second stage Package bottom is electrical and thermal ground Absolute Maximum Ratings 1 Rating Symbol Value Unit DC Supply Voltage VDD 5.5 V RF Input Power PIN 10 mW Junction Temperature TJ 150 °C Storage Temperature TSTG -40 to +150 °C Operating Temperature TOPER -40 to +100 °C Moisture Sensitivity JEDEC Level 1 1. Beyond these limits, the device may be damaged or device reliability reduced. Functional operation at absolute-maximum-rated conditions is not implied. RF Power Amplifier IC for 2.4 GHz ISM MA02303GJ Electrical Specifications: VDD = +3.3 V, PIN = -2 dBm, Duty Cycle = 100 %, TS = 37 °C (Note 1), measured on evaluation board shown in Figure 11. Characteristic Frequency Range Output Power, ƒ = 2450 MHz Symbol Min. ƒ 2400 POUT 25.3 Typ. 26.5 η 51 Current, ƒ = 2450 MHz IDD 265 Current for linear operation, ƒ = 2450 MHz, IDD Power Added Efficiency, ƒ = 2450 MHz Max. Unit 2500 MHz — dBm % 415 mA 415 mA PIN adjusted for POUT = 20.0 dBm +/- 0.2 dBm Gain, ƒ = 2450 MHz, G 29.5 dB 2ƒ, 3ƒ, 4 ƒ -40 dBc Input VSWR, ƒ = 2450 MHz — — Off Isolation (VDD=0 V) — 40 dB Thermal Resistance, junction to package bottom RTH 25 °C/W Third Order Intercept Point IP3 43 dBm Load Mismatch (VDD = 5.5 V, VSWR = 8:1, PIN = 0 dBm) — No Degradation in Power Output Stability (PIN = -2 to 2 dBm, VDD = 0-5.5 V, Load VSWR = 5:1, all phases) — All non-harmonically related outputs more than 60 dB below desired signal PIN adjusted for POUT = 20.0 dBm +/- 0.2 dBm Harmonics, ƒ = 2450 MHz 2.0:1 — 1. TS is the temperature measured at the soldering point of the downset paddle on the bottom of the IC. Specifications subject to change without notice. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. 2 RF Power Amplifier IC for 2.4 GHz ISM MA02303GJ Typical Characteristics (Measured data from process nominal devices) Output Power, and Drain Current vs. Input Power for Low Current “Bypass” Mode (VDD1,2 = 3.3 V, VDD3 = 0.0 V) 60 12 300 300 30 DD 150 20 50 F = 2450 MHz OUT -5 200 PAE P 6 I 4 100 2 50 -5 Output Power, Drain Current and Efficiency vs. Supply Voltage Output Power, Drain Current and Efficiency vs. VDD1 for Power Control IN 10 IN OUT I DD F = 2450 MHz 1 2 300 0.10 5 100 3 4 5 0.05 0 0.0 0.5 1.0 1.5 V DD1 Output Power, Input Return Loss and Efficiency vs. Frequency 2.0 2.5 3.0 0 (V) Output Power and Drain Current vs. Temperature at VDD = +3.0 V 0 35 350 50 -5 30 300 20 -15 -20 P = - 2 dBm IN 10 0 2200 V DD IRL = 3.3 V 2300 -25 2400 2500 -30 2600 FREQUENCY (MHz) Specifications subject to change without notice. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. 25 250 20 I 15 10 5 0 -50 P P V IN = - 2 dBm DD DD 200 150 OUT I OUT 30 OUT -10 P PAE P 40 (dBm) 60 IRL B(dB) (dBm), PAE (%) 400 200 IN OUT DD2 10 0.15 PAE 15 DD1 I P = -2 dBm I 100 - 3.0 V 50 F = 2450 MHz 0 50 o (mA) P P 20 OUT ,I 0.20 P 20 DD1 30 DD DD I OUT (A) 0.25 P 500 I (mA) 25 600 DD2 0.30 (dBm) 40 30 OUT PAE 50 0.35 P (dBm) P 0 5 0 P (dBm) I (dBm), PAE (%) P OUT B 150 DD OUT P (dBm) 60 B 250 8 IN 0 = 0.0 V F = 2450 MHz 0 -10 0 5 0 DD3 DD 0 -10 = 3.3 V P 10 DD1, 2, 3 OUT 100 V PAE P 10 = 3.3 V, V DD 200 (mA) 40 B DD DD1, 2 I 250 I (dBm), PAE (%) 50 I (dBm), PAE (%) P OUT B V (mA) Output Power, Drain Current and Efficiency vs. Input Power 0 100 Temperature, T ( C) S 3 RF Power Amplifier IC for 2.4 GHz ISM MA02303GJ Typical Characteristics (Cont’d) (Measured data from process nominal devices) 300 250 25 250 V 5 IN DD 100 - 3.2 V 0 -50 0 o 15 P P 10 V IN DD 150 OUT 100 - 3.6 V 50 F = 2450 MHz 0 Temperature, T ( C) 0 100 50 o Temperature, T ( C) S S Harmonics Maximum Operating Temperature (Ts) to Maintain <150 °C Junction Temperature. 6 = -2 d B m ƒ0 = 2 4 5 0 M H z 20 V D D = 3 .3 V 15 5 4 *V 10 OUT IN -P P 25 DD3 30 DD 5 (W) = I P OUT (dBm) 200 DD = - 2 dBm 0 -50 0 100 50 I 5 50 F = 2450 MHz 20 I 150 OUT = - 2 dBm OUT P P 10 P 15 200 DD DD I (dBm) 300 25 B 350 30 (mA) 35 I (dBm) P 350 30 20 OUT B 35 0 -5 DISS -1 0 P -1 5 -2 0 ƒ0 2ƒ0 3ƒ0 4ƒ0 3 2 1 0 -50 0 50 100 150 o Temperature T ( C) S Specifications subject to change without notice. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. (mA) Output Power and Drain Current vs. Temperature at VDD = +3.6V DD Output Power and Drain Current vs. Temperature at VDD = +3.2 V 4 RF Power Amplifier IC for 2.4 GHz ISM MA02303GJ Mechanical Data Figure 11 Component layout and printed circuit drawing for evaluation board (60 mil GETEK board). Application Information +VDD C3 T7 R1 RFIN T1 C1 T2 T3 L1 T4 C4 3 C2 T8 L2 1 8 2 7 3 6 4 5 RFOUT T6 T5 C5 C6 Full-Downset Paddle To Board Ground Figure 12 Evaluation Board Schematic List of Components Discrete Components C1 – C4 = 100 pF multilayer ceramic chip capacitor (Dielectric Labs C11AH101K5TXL) C5 = 2.0 pF multilayer ceramic chip capacitor (Dielectric Labs C11AH2R0BTXL) C6 = 1.2 pF multilayer ceramic chip capacitor (Dielectric Labs C11AH1R2B5TXL) R1 = 300 Ω chip resistor (P300ECT-ND) L1 = 1.8 nH chip inductor (Toko TKS235CT-ND) L2 = 27 nH chip inductor (Coilcraft 1008CS-270XKBB) Transmission Line Lengths* T1 = 0.15" T2 = 0.21" T3 = 0.11" (Not very critical) T4 = 0.16" T5 = 0.13" T6 = 0.16" T7 = 0.13" (Not very critical) T8 = 0.077" (Not very critical) T1, T2, T3, T5, T6 are 0.077" wide T4, T7, and T8 are 0.026" wide *The board material is 0.060" FR-4 (distance is between RF and GND) with a dielectric constant of about 4.3 (standard FR-4) Specifications subject to change without notice. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. 5 RF Power Amplifier IC for 2.4 GHz ISM MA02303GJ Designing with the MA02303GJ The MA02303GJ is built using a near-enhancement mode FET that operates from a single supply voltage. A negative voltage is not required because the FET is designed to operate with a +0V DC gate bias. There is no impedance matching or RF choking on this IC – these functions are supplied externally. This approach offers the highest level of performance, the lowest bill of materials cost, and far fewer components than a discrete design. To duplicate MA02303GJ data sheet performance, your circuit board must recreate the same impedances developed on this evaluation board. The table below has one-port s-parameter measurements looking into the traces on the evaluation board. S-parameters of the MA02303GJ are not supplied because the device is designed to operate under largesignal conditions. Frequency VDD1 Pin 1 RFIN/VGG1 Pin 2 VGG2 Pin 4 RFOUT/VDD3 Pin 7 VDD2 Pin 8 GHz Mag Ang Mag Ang Mag Ang Mag Ang Mag Ang 0.2 0.98890 168.89 0.98437 158.43 0.98990 157.75 0.96758 88.92 0.98740 170.03 0.3 0.88449 130.14 0.97810 148.00 0.98811 147.07 0.93440 52.01 0.87259 126.11 0.4 0.96296 162.21 0.96932 138.02 0.98733 136.83 0.89791 28.02 0.95647 168.46 0.5 0.98166 159.36 0.96033 128.52 0.98729 126.92 0.85525 8.85 0.97951 165.71 0.6 0.98669 150.11 0.95221 119.37 0.98779 117.53 0.80306 -8.42 0.98325 157.06 0.7 0.98659 142.94 0.94257 110.68 0.98796 108.67 0.75165 -23.19 0.98331 150.64 0.8 0.98701 136.46 0.93372 102.50 0.98912 100.34 0.70235 -36.51 0.98362 144.92 0.9 0.98696 130.40 0.92399 94.78 0.98928 92.48 0.65785 -49.03 0.98291 139.57 1.0 0.98757 124.64 0.91521 87.48 0.99004 85.10 0.61674 -61.22 0.98248 134.49 1.1 0.98793 119.13 0.90655 80.60 0.99099 78.16 0.58189 -73.60 0.98325 129.55 1.2 0.98766 113.79 0.89741 74.13 0.99165 71.67 0.55207 -86.36 0.98254 124.75 1.3 0.98685 108.52 0.88850 68.01 0.99162 65.55 0.52778 -99.76 0.98097 119.95 1.4 0.98253 103.08 0.87922 62.20 0.99228 59.78 0.51054 -113.87 0.97567 114.77 1.5 0.91016 98.26 0.87041 56.61 0.99283 54.27 0.50134 -128.62 0.88506 109.11 1.6 0.97895 96.95 0.85901 51.24 0.99372 49.02 0.50184 -143.72 0.96660 110.93 1.7 0.98693 91.94 0.84867 46.25 0.99362 44.08 0.51099 -159.03 0.97912 105.76 1.8 0.98885 87.51 0.83780 41.39 0.99411 39.33 0.52890 -174.06 0.98174 101.51 1.9 0.98968 83.39 0.82602 36.67 0.99457 34.73 0.55378 171.57 0.98247 97.56 2.0 0.99001 79.46 0.81268 32.09 0.99405 30.31 0.58373 158.06 0.98252 93.75 2.1 0.98939 75.68 0.79856 27.65 0.99409 26.02 0.61689 145.85 0.96646 89.86 2.2 0.99079 72.12 0.78264 23.35 0.99430 21.85 0.65283 133.76 0.98349 87.18 2.3 0.99100 68.61 0.76563 19.11 0.99427 17.75 0.68573 123.12 0.98395 83.71 2.4 0.99134 65.25 0.74652 14.96 0.99425 13.76 0.71788 113.31 0.98474 80.41 2.5 0.99146 61.98 0.72506 10.91 0.99399 9.82 0.74798 104.32 0.98447 77.23 2.6 0.99178 58.73 0.70186 6.91 0.99400 5.85 0.77528 95.95 0.98507 74.04 2.7 0.99134 55.49 0.67587 2.97 0.99331 1.90 0.79976 88.27 0.98381 70.83 2.8 0.98781 52.20 0.64683 -0.91 0.99282 -2.00 0.82079 81.13 0.98006 67.52 2.9 0.96980 48.90 0.61470 -4.81 0.99214 -5.98 0.83832 74.49 0.96403 63.91 3.0 0.95172 48.55 0.57400 -8.86 0.99108 -9.98 0.85400 68.30 0.90400 62.55 3.1 0.98242 46.16 0.52740 -11.19 0.98954 -13.99 0.86663 62.57 0.95087 63.65 3.2 0.99063 43.08 0.48956 -13.34 0.98827 -18.12 0.87801 57.07 0.97696 60.24 3.3 0.99392 40.27 0.44620 -15.29 0.98684 -22.42 0.88698 51.92 0.98397 57.19 3.4 0.99353 37.51 0.40182 -16.23 0.98579 -26.81 0.89353 46.93 0.98539 54.35 3.5 0.99183 34.87 0.35797 -15.65 0.98338 -31.29 0.89823 42.18 0.98374 51.69 3.6 0.98528 32.36 0.31683 -13.12 0.98114 -36.02 0.90042 37.52 0.97595 49.24 Specifications subject to change without notice. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. 6 RF Power Amplifier IC for 2.4 GHz ISM MA02303GJ Designing with the MA02303GJ (Cont’d) Frequency VDD1 Pin 1 RFIN/VGG1 Pin 2 VGG2 Pin 4 RFOUT/VDD3 Pin 7 VDD2 Pin 8 GHz Mag Ang Mag Ang Mag Ang Mag Ang Mag Ang 3.7 0.98115 30.74 0.28368 -7.89 0.97774 -40.95 0.89832 32.95 0.97468 47.68 3.8 0.99055 28.59 0.26456 -0.17 0.97527 -46.15 0.88711 28.34 0.98255 45.41 3.9 0.99468 26.15 0.26206 8.43 0.97149 -51.66 0.85217 23.98 0.98187 42.91 4.0 0.99541 23.85 0.27526 16.18 0.96801 -57.48 0.78439 25.69 0.97076 41.20 4.1 0.99675 21.53 0.30017 21.62 0.96214 -63.64 0.91321 26.53 0.98240 39.66 4.2 0.99695 19.34 0.33169 24.71 0.95817 -70.37 0.95402 19.53 0.98870 37.44 4.3 0.99709 17.08 0.36614 25.86 0.95218 -77.52 0.95927 14.12 0.99033 35.21 4.4 0.99625 14.89 0.40041 25.61 0.94464 -85.24 0.95907 9.50 0.99064 33.12 4.5 0.99600 12.71 0.43430 24.41 0.93766 -93.67 0.95776 5.12 0.99008 31.05 4.6 0.99528 10.53 0.46785 22.33 0.92733 -102.87 0.95648 0.78 0.98931 29.00 4.7 0.99356 8.29 0.49729 18.61 0.90989 -112.87 0.95538 -3.70 0.98729 26.91 4.8 0.98985 6.02 0.50830 15.70 0.89316 -122.91 0.95299 -8.40 0.98183 24.79 4.9 0.98183 3.77 0.53008 12.03 0.87835 -135.47 0.94875 -13.35 0.96994 22.79 5.0 0.96606 1.91 0.51899 5.22 0.76901 -147.15 0.94290 -18.71 0.94954 21.59 5.1 0.95907 1.19 0.48184 8.12 0.80492 -149.68 0.93754 -24.50 0.95096 21.58 5.2 0.97380 -0.08 0.51026 7.72 0.86212 -162.69 0.93242 -31.40 0.96888 20.35 5.3 0.98447 -2.18 0.52064 4.75 0.87712 -176.53 0.92307 -39.86 0.97525 18.47 5.4 0.98993 -4.47 0.51978 2.19 0.88096 170.41 0.90396 -50.55 0.98503 17.01 5.5 0.99206 -6.71 0.51313 -0.14 0.88478 157.90 0.86790 -64.94 0.99094 14.98 5.6 0.99234 -8.95 0.50465 -2.02 0.89099 145.89 0.79942 -85.01 0.99192 13.15 5.7 0.99149 -11.15 0.49217 -3.82 0.89655 134.39 0.69417 -115.75 0.99221 11.35 5.8 0.98990 -13.42 0.47394 -5.03 0.90165 123.67 0.55561 -163.96 0.99216 9.58 5.9 0.98628 -15.52 0.45693 -5.12 0.90854 113.69 0.51158 134.06 0.99070 7.95 6.0 0.98532 -17.49 0.44346 -4.72 0.91522 104.42 0.59033 85.74 0.98983 6.41 MSOP-8EP (Downset Lead) MSOP-8 PIN 8 Measurement (mm) Measurement (inches) L Min. 0.80 0.26 0.75 0.25 2.90 1.85 ref. 4.90 basic 2.90 1.73 ref. 0.65 basic 0.40 Max. 1.10 0.076 0.95 0.40 3.10 1.85 ref. 4.90 basic 3.10 1.73 ref. 0.65 basic 0.70 Min. Max. 0.0315 0.0433 0.0010 0.0030 0.0295 0.0374 0.0098 0.0157 0.1142 0.1220 0.073 ref. 0.073 ref. 0.1929 0.1929 basic basic 0.1142 0.1220 0.068 ref. 0.068 ref. 0.0256 0.0256 basic basic 0.0157 0.0276 Theta (θ) 0o 6o Dim E1 A A1 A2 b D D1 E E 15° MAX PIN 1 e L Theta θ D1 D E2 A2 A b E1 E2 e A1 EXPOSED PAD 0o 6o Note: All dimensions per JEDEC MO-187 Var. AA (issue B) except for D1, E2, and A1. See JEDEC or contact M/A-COM for additional dimensional and tolerance information. Specifications subject to change without notice. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. 7