Datasheet

1N5624, 1N5625, 1N5626, 1N5627
www.vishay.com
Vishay Semiconductors
Standard Avalanche Sinterglass Diode
FEATURES
• Glass passivated junction
• Hermetically sealed package
• Controlled avalanche characteristics
• Low reverse current
• High surge current loading
949588
MECHANICAL DATA
Case: SOD-64
Terminals: plated axial leads, solderable per
MIL-STD-750, method 2026
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Rectification diode, general purpose
Polarity: color band denotes cathode end
Mounting position: any
Weight: approx. 858 mg
ORDERING INFORMATION (Example)
DEVICE NAME
ORDERING CODE
TAPED UNITS
MINIMUM ORDER QUANTITY
1N5627-TR
1N5627-TAP
2500 per 10" tape and reel
2500 per ammopack
12 500
12 500
TYPE DIFFERENTIATION
PACKAGE
VR = 200 V; IF(AV) = 3 A
VR = 400 V; IF(AV) = 3 A
VR = 600 V; IF(AV) = 3 A
VR = 800 V; IF(AV) = 3 A
SOD-64
SOD-64
SOD-64
SOD-64
1N5627
1N5627
PARTS TABLE
PART
1N5624
1N5625
1N5626
1N5627
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage = repetitive peak reverse
voltage
Peak forward surge current
Repetitive peak forward current
Average forward current
Pulse avalanche peak power
Pulse energy in avalanche mode, non repetitive
(inductive load switch off)
i2*t-rating
Junction and storage temperature range
TEST CONDITION
PART
SYMBOL
VALUE
UNIT
See electrical characteristics
1N5624
1N5625
1N5626
1N5627
VR = VRRM
VR = VRRM
VR = VRRM
VR = VRRM
IFSM
IFRM
IF(AV)
200
400
600
800
100
18
3
V
V
V
V
A
A
A
tp = 20 μs, half sine wave,
Tj = 175 °C
PR
1000
W
I(BR)R = 1 A, Tj = 175 °C
ER
20
mJ
i2*t
40
- 55 to + 175
A2*s
°C
tp = 10 ms, half sinewave
Tj = Tstg
MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Junction ambient
Rev. 1.6, 05-Sep-13
TEST CONDITION
SYMBOL
VALUE
UNIT
l = 10 mm, TL = constant
RthJA
25
K/W
On PC board with spacing 25 mm
RthJA
70
K/W
Document Number: 86063
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1N5624, 1N5625, 1N5626, 1N5627
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Forward voltage
Reverse current
SYMBOL
MIN.
TYP.
MAX.
IF = 3 A
PART
VF
-
-
1
UNIT
V
VR = VRRM
IR
-
0.1
1
μA
VR = VRRM, Tj = 100 °C
IR
-
5
10
μA
Breakdown voltage
IR = 100 μA, tp/T = 0.01,
tp = 0.3 ms
V(BR)
-
-
1600
V
Diode capacitance
VR = 4 V, f = 1 MHz
CD
-
40
60
pF
Reverse recovery time
IF = 0.5 A, IR = 1 A, iR = 0.25 A
trr
-
3.5
5
μs
IF = 1 A, dI/dt = 5 A/μs, VR = 50 V
trr
-
4.5
7.5
μs
IF = 1 A, dI/dt = 5 A/μs
Qrr
-
8
12
μC
Reverse recovery charge
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
3.5
30
20
l
l
10
2.5
2.0
1.5
1.0
0
5
10
15
20
25
0.0
30
I - Lead Length (mm)
94 9563
RthJA = 70 K/W
PCB: d = 25 mm
0.5
TL = constant
0
VR = VRRM
half sinewave
RthJA = 25 K/W
l = 10 mm
3.0
IFAV - Average Forward Current (A)
RthJA - Therm. Resist.
Junction/Ambient (K/W)
40
Fig. 1 - Max. Thermal Resistance vs. Lead Length
0
20
40
60
80
100 120 140 160 180
Tamb - Ambient Temperature (°C)
16393
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
1000
100.000
– Forward Current ( A )
F
I
1.000
T j =175°C
0.100
T j =25°C
0.010
I R – R everse Current ( A )
V R = V RRM
10.000
0.001
16392
100
10
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V F – Forward Voltage ( V )
Fig. 2 - Forward Current vs. Forward Voltage
Rev. 1.6, 05-Sep-13
25
16394
50
75
100
125
150
T j – Junction Temperature ( °C )
175
Fig. 4 - Reverse Current vs. Junction Temperature
Document Number: 86063
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1N5624, 1N5625, 1N5626, 1N5627
www.vishay.com
Vishay Semiconductors
100
V R = V RRM
200
PR –L imit
@ 100%V R
150
PR –L imit
@ 80%V R
100
f=1MHz
90
250
CD – Diode Capacitance ( pF )
PR – R everse Power Dissipation ( mW )
300
50
80
70
60
50
40
30
20
10
0
0
25
16395
50
75
100
125
150
T j – Junction Temperature ( °C )
175
0.1
1.0
10.0
V R – R everse Voltage ( V )
16396
Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature
100.0
Fig. 6 - Diode Capacitance vs. Reverse Voltage
PACKAGE DIMENSIONS in millimeters (inches): SOD-64
Sintered Glass Case
SOD-64
Cathode Identification
4.3 (0.168) max.
1.35 (0.053) max.
26(1.014) min.
4 (0.156) max.
26 (1.014) min.
Document-No.: 6.563-5006.4-4
Rev. 3 - Date: 09.February.2005
94 9587
Rev. 1.6, 05-Sep-13
Document Number: 86063
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000