1N5221 to 1N5267 Datasheet

1N5221 to 1N5267
www.vishay.com
Vishay Semiconductors
Small Signal Zener Diodes
FEATURES
• Silicon planar power Zener diodes
• Standard Zener voltage tolerance is ± 5 % with
a “B” suffix in the ordering code (e.g.: 1N5221B),
suffix “C” is ± 2 % tolerance
• These diodes are also available in MiniMELF
case with the type designation TZM5221 to
TZM5267, SOT-23 case with the type
designations MMBZ5225 to MMBZ5267 and
SOD-123 case with the types designations MMSZ5225 to
MMSZ5267
• AEC-Q101 qualified
PRIMARY CHARACTERISTICS
PARAMETER
VALUE
UNIT
VZ range nom.
2.4 to 75
V
Test current IZT
1.7 to 20
mA
VZ specification
Thermal equilibrium
Int. construction
Single
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Voltage stabilization
ORDERING INFORMATION
DEVICE NAME
ORDERING CODE
TAPED UNITS PER REEL
1N5221B to 1N5267B
1N5221B to 1N5267B-series-TR
1N5221C to 1N5267C
1N5221C to 1N5267C-series-TR
1N5221B to 1N5267B
1N5221B to 1N5267B-series-TAP
1N5221C to 1N5267C
1N5221C to 1N5267C-series-TAP
MINIMUM ORDER QUANTITY
10 000 per 13" reel
30 000/box
10 000 per ammopack
(52 mm tape)
PACKAGE
PACKAGE NAME
DO-35
WEIGHT
125 mg
MOLDING COMPOUND MOISTURE SENSITIVITY
FLAMMABILITY RATING
LEVEL
UL 94 V-0
MSL level 1
(according J-STD-020)
SOLDERING
CONDITIONS
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Power dissipation
TEST CONDITION
SYMBOL
VALUE
UNIT
TL  25 °C
Ptot
500
mW
IZ
Ptot/VZ
mA
RthJA
300
K/W
Tj
175
°C
Tstg
-65 to +175
°C
VF
1.1
V
Zener current
Thermal resistance junction to ambient air
I = 4 mm, TL = constant
Junction temperature
Storage temperature range
Forward voltage (max.)
IF = 200 mA
Rev. 2.1, 08-Sep-14
Document Number: 85588
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1N5221 to 1N5267
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
ZENER VOLTAGE
RANGE (1)
PART NUMBER
VZ at IZT1
TEST CURRENT
IZT1
V
1N5221
1N5222
1N5223
1N5224
1N5225
1N5226
1N5227
1N5228
1N5229
1N5230
1N5231
1N5232
1N5233
1N5234
1N5235
1N5236
1N5237
1N5238
1N5239
1N5240
1N5241
1N5242
1N5243
1N5244
1N5245
1N5246
1N5247
1N5248
1N5249
1N5250
1N5251
1N5252
1N5253
1N5254
1N5255
1N5256
1N5257
1N5258
1N5259
1N5260
1N5261
1N5262
1N5263
1N5264
1N5265
1N5266
1N5267
NOM.
2.4
2.5
2.7
2.8
3
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6
6.2
6.8
7.5
8.2
8.7
9.1
10
11
12
13
14
15
16
17
18
19
20
22
24
25
27
28
30
33
36
39
43
47
51
56
60
62
68
75
IZT2
mA
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
9.5
9
8.5
7.8
7.4
7
6.6
6.2
5.6
5.2
5
4.6
4.5
4.2
3.8
3.4
3.2
3
2.7
2.5
2.2
2.1
2
1.8
1.7
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
REVERSE
LEAKAGE
CURRENT
DYNAMIC RESISTANCE
f = 1 kHz
ZZ at IZT1 (1)
IR at VR
μA
V
MAX.
100
100
75
75
50
25
15
10
5
5
5
5
5
5
3
3
3
3
3
3
2
1
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
1
1
1
1
1
1
1
1
1
2
2
3
3.5
4
5
6
6.5
6.5
7
8
8.4
9.1
9.9
10
11
12
13
14
14
15
17
18
19
21
21
23
25
27
30
33
36
39
43
46
47
52
56
ZZK at IZT2

MAX.
30
30
30
30
29
28
24
23
22
19
17
11
7
7
5
6
8
8
10
17
22
30
13
15
16
17
19
21
23
25
29
33
35
41
44
49
58
70
80
93
105
125
150
170
185
230
270
TEMPERATURE
COEFFICIENT
VZ
%/K
MAX.
1200
1250
1300
1400
1600
1600
1700
1900
2000
1900
1600
1600
1600
1000
750
500
500
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
700
700
800
900
1000
1100
1300
1400
1400
1600
1700
TYP.
- 0.085
- 0.085
- 0.08
- 0.08
- 0.075
- 0.07
- 0.065
- 0.06
0.055
0.03
0.03
0.038
0.038
0.045
0.05
0.058
0.062
0.065
0.068
0.075
0.076
0.077
0.079
0.082
0.082
0.083
0.084
0.085
0.086
0.086
0.087
0.088
0.089
0.09
0.091
0.091
0.092
0.093
0.094
0.095
0.095
0.096
0.096
0.097
0.097
0.097
0.098
Note
(1) Based on DC measurement at thermal equilibrium; lead length = 9.5 (3/8"); thermal resistance of heat sink = 30 K/W
Rev. 2.1, 08-Sep-14
Document Number: 85588
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1N5221 to 1N5267
www.vishay.com
Vishay Semiconductors
RthJA - Therm. Resist. Junction Ambient (K/W)
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
400
300
l
l
200
100
TL = constant
0
0
5
10
600
Ptot - Total Power Dissipation (mW)
500
500
400
300
200
100
0
0
20
15
I - Lead Length (mm)
95 9611
Fig. 1 - Thermal Resistance vs. Lead Length
95 9602
Fig. 4 - Total Power Dissipation vs. Ambient Temperature
15
TKVZ - Temperature Coefficient
of VZ (10-4/K)
VZ - Voltage Change (mV)
1000
100
IZ = 5 mA
10
0
5
10
15
5
IZ = 5 mA
0
0
25
20
VZ - Z-Voltage (V)
95 9598
10
20
30
40
50
VZ - Z-Voltage (V)
95 9600
Fig. 2 - Typical Change of Working Voltage under Operating
Conditions at Tamb= 25 °C
Fig. 5 - Temperature Coefficient of VZ vs. Z-Voltage
1.3
200
VZtn = VZt/VZ (25 °C)
1.2
TKVZ = 10 x 10-4/K
8 x 10-4/K
6 x 10-4/K
1.1
-4
4 x 10 /K
2 x 10-4/K
0
1.0
- 2 x 10-4/K
- 4 x 10-4/K
0.9
CD - Diode Capacitance (pF)
VZtn - Relative Voltage Change
10
-5
1
150
VR = 2 V
Tj = 25 °C
100
50
0
0.8
- 60
95 9599
80
120
160 200
40
Tamb - Ambient Temperature (°C)
0
60
120
180
240
Tj - Junction Temperature (°C)
Fig. 3 - Typical Change of Working Voltage vs.
Junction Temperature
0
95 9601
5
10
15
20
25
VZ - Z-Voltage (V)
Fig. 6 - Diode Capacitance vs. Z-Voltage
Rev. 2.1, 08-Sep-14
Document Number: 85588
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1N5221 to 1N5267
Vishay Semiconductors
100
50
10
40
IZ - Z-Current (mA)
IF - Forward Current (mA)
www.vishay.com
Tj = 25 °C
1
0.1
0.01
30
20
10
0.001
0
0.2
0.4
0.6
0
1.0
0.8
15
VF - Forward Voltage (V)
959605
20
25
30
35
VZ - Z-Voltage (V)
95 9607
Fig. 7 - Forward Current vs. Forward Voltage
Fig. 9 - Z-Current vs. Z-Voltage
1000
rZ - Differential Z-Resistance (Ω)
100
80
IZ - Z-Current (mA)
Ptot = 500 mW
Tamb = 25 °C
Ptot = 500 mW
Tamb = 25 °C
60
40
20
IZ = 1 mA
100
5 mA
10 10 mA
Tj = 25 °C
1
0
0
4
6
12
8
20
VZ - Z-Voltage (V)
95 9604
10
15
20
25
VZ - Z-Voltage (V)
95 9606
Fig. 8 - Z-Current vs. Z-Voltage
Zthp - Thermal Resistance for Pulse Cond. (K/W)
5
0
Fig. 10 - Differential Z-Resistance vs. Z-Voltage
1000
tp/T = 0.5
100
tp/T = 0.2
Single Pulse
RthJA = 300 K/W
T = Tj max. - Tamb
10
tp/T = 0.01
tp/T = 0.1
tp/T = 0.02
tp/T = 0.05
1
10-1
iZM = (- VZ + (VZ2 + 4rzj x T/Zthp) 1/2)/(2rzj)
100
101
tp - Pulse Length (ms)
102
95 9603
Fig. 11 - Thermal Response
Rev. 2.1, 08-Sep-14
Document Number: 85588
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1N5221 to 1N5267
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters (inches): DO-35_1N52xx
3.9 max. [0.154]
3.1 min. [0.120]
26 min. [1.024]
1.5 [0.059]
26 min. [1.024]
1.7 [0.067]
Ø 0.4 min. [0.015]
Ø 0.55 max. [0.022]
Cathode Identification
Rev. 1 - Date: 19. December 2011
Document no.: S8-V-3906.04-031(4)
94 12648
Rev. 2.1, 08-Sep-14
Document Number: 85588
5
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000