Si1029X Vishay Siliconix Complementary N- and P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 60 - 60 RDS(on) () ID (mA) 1.40 at VGS = 10 V 500 3 at VGS = 4.5 V 200 4 at VGS = - 10 V - 500 8 at VGS = - 4.5 V - 25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • Very Small Footprint • High-Side Switching • Low On-Resistance: N-Channel, 1.40 P-Channel, 4 • Low Threshold: ± 2 V (typ.) • Fast Switching Speed: 15 ns (typ.) • Gate-Source ESD Protected: 2000 V • Compliant to RoHS Directive 2002/95/EC SC-89 S1 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code: H BENEFITS • • • • Top View Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Ordering Information: Si1029X-T1-GE3 (Lead (Pb)-free and Halogen-free) APPLICATIONS • Replace Digital Transistor, Level-Shifter • Battery Operated Systems • Power Supply Converter Circuits ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) N-Channel Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 85 °C Pulsed Drain Currentb TA = 25 °C TA = 85 °C Operating Junction and Storage Temperature Range Gate-Source ESD Rating (HBM, Method 3015) IS PD P-Channel Steady State 5s 60 Steady State - 60 320 230 305 - 200 220 - 145 650 Unit V ± 20 IDM Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa ID 5s - 190 - 135 - 650 450 380 - 450 - 380 280 250 280 250 145 130 145 130 mA mW TJ, Tstg - 55 to 150 °C ESD 2000 V Notes: a. Surface mounted on FR4 board. b. Pulse width limited by maximum junction temperature. Document Number: 71435 S10-2432-Rev. C, 25-Oct-10 www.vishay.com 1 Si1029X Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage VDS VGS(th) VGS = 0 V, ID = 10 µA VGS = 0 V, ID = - 10 µA VDS = VGS, ID = 250 µA VDS = VGS, ID = - 250 µA VDS = 0 V, VGS = ± 5 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 10 V Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea IDSS ID(on) RDS(on) gfs VSD VDS = 50 V, VGS = 0 V VDS = - 50 V, VGS = 0 V VDS = 50 V, VGS = 0 V, TJ = 85 °C VDS = - 50 V, VGS = 0 V, TJ = 85 °C VDS = 10 V, VGS = 4.5 V VDS = - 10 V, VGS = - 4.5 V VDS = 7.5 V, VGS = - 4.5 V VDS = - 10 V, VGS = - 10 V VGS = 4.5 V, ID = 200 mA VGS = - 4.5 V, ID = - 25 mA VGS = 10 V, ID = 500 mA VGS = - 10 V, ID = - 500 mA VGS = 10 V, ID = 500 mA, TJ = 125 °C VGS = - 10 V, ID = - 500 mA, TJ = 125 °C VDS = 10 V, ID = 200 mA VDS = - 10 V, ID = - 100 mA IS = 200 mA, VGS = 0 V IS = - 200 mA, VGS = 0 V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 60 - 60 1 -1 2.5 - 3.0 ± 50 ± 100 ± 150 ± 200 10 - 25 100 - 250 500 - 50 800 - 600 V nA mA 3 8 1.40 4 2.50 6 200 100 ms 1.4 - 1.4 V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss N-Channel VDS = 10 V, VGS = 4.5 V, ID = 250 mA P-Channel VDS = - 30 V, VGS = - 15 V, ID = - 500 mA N-Channel VDS = 25 V, VGS = 0 V, f = 1 MHz P-Channel VDS = - 25 V, VGS = 0 V, f = 1 MHz N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 750 1700 75 260 225 460 30 23 6 10 3 5 Reverse Transfer Capacitance Crss 15 tON N-Channel VDD = 30 V, RL = 150 ID 200 mA, VGEN = 10 V, Rg = 10 N-Ch Turn-On Timec P-Ch 20 N-Ch 20 tOFF P-Channel VDD = - 25 V, RL = 150 ID - 165 mA, VGEN = - 10 V, Rg = 10 P-Ch 35 Turn-Off Timec pC pF ns Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Switching time is essentially independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 71435 S10-2432-Rev. C, 25-Oct-10 Si1029X Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 1200 1.0 6V TJ = - 55 °C VGS = 10 V thru 7 V I D - Drain Current (A) I D - Drain Current (mA) 5V 0.8 0.6 4V 0.4 900 25 °C 125 °C 600 300 0.2 3V 0.0 0 0 1 2 3 4 5 0 1 VDS - Drain-to-Source Voltage (V) 2 5 6 Transfer Characteristics 50 4.0 VGS = 0 V f = 1 MHz 3.5 40 3.0 C - Capacitance (pF) R DS(on) - On-Resistance ( ) 4 VGS - Gate-to-Source Voltage (V) Output Characteristics 2.5 VGS = 4.5 V 2.0 1.5 VGS = 10 V 30 Ciss 20 Coss 1.0 10 Crss 0.5 0 0.0 0 200 400 600 800 0 1000 5 I D - Drain Current (mA) 10 20 25 Capacitance 7 2.0 VGS = 10 V at 500 mA VDS = 10 V ID = 250 mA 5 4 3 2 (Normalized) 1.6 R DS(on) - On-Resistance 6 15 V DS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current VGS - Gate-to-Source Voltage (V) 3 1.2 VGS = 4.5 V at 200 mA 0.8 0.4 1 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.0 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 71435 S10-2432-Rev. C, 25-Oct-10 150 www.vishay.com 3 Si1029X Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 1000 5 100 TJ = 125 °C 10 4 R DS(on) - On-Resistance ( ) I S - Source Current (A) VGS = 0 V TJ = 25 °C 3 2 ID = 500 mA ID = 200 mA 1 TJ = - 55 °C 0 1 0.00 0.3 0.6 0.9 1.2 0 1.5 2 VSD - Source-to-Drain Voltage (V) 4 6 8 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.4 0.2 V GS(th) Variance (V) ID = 250 µA 0.0 - 0.2 - 0.4 - 0.6 - 0.8 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Threshold Voltage Variance Over Temperature www.vishay.com 4 Document Number: 71435 S10-2432-Rev. C, 25-Oct-10 Si1029X Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 1200 1.0 VGS = 10 V TJ = - 55 °C 7V 8V 900 I D - Drain Current (mA) I D - Drain Current (A) 0.8 6V 0.6 0.4 5V 25 °C 125 °C 600 300 0.2 4V 0.0 0 0 1 2 3 4 5 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 10 40 20 16 32 C - Capacitance (pF) R DS(on) - On-Resistance ( ) VGS = 0 V VGS = 4.5 V 12 VGS = 5 V 8 VGS = 10 V 4 Ciss 24 16 Coss 8 Crss 0 0 0 200 400 600 800 0 1000 5 I D - Drain Current (mA) 10 25 Capacitance 15 1.8 ID = 500 mA 1.5 12 VDS = 48 V 9 6 3 VGS = 10 V at 500 mA 1.2 (Normalized) VDS = 30 V R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 20 V DS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 0 0.0 15 VGS = 4.5 V at 25 mA 0.9 0.6 0.3 0.3 0.6 0.9 1.2 1.5 1.8 0.0 - 50 - 25 0 25 50 75 100 125 Q g - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 71435 S10-2432-Rev. C, 25-Oct-10 150 www.vishay.com 5 Si1029X Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 1000 10 100 TJ = 125 °C 10 8 R DS(on) - On-Resistance ( ) I S - Source Current (A) VGS = 0 V TJ = 25 °C ID = 500 mA 6 4 ID = 200 mA 2 TJ = - 55 °C 0 1 0.00 0.3 0.6 0.9 1.2 0 1.5 2 4 6 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 10 0.5 0.4 ID = 250 µA VGS(th) Variance (V) 0.3 0.2 0.1 0.0 - 0.1 - 0.2 - 0.3 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Threshold Voltage Variance Over Temperature www.vishay.com 6 Document Number: 71435 S10-2432-Rev. C, 25-Oct-10 Si1029X Vishay Siliconix N- OR P-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 500 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71435. Document Number: 71435 S10-2432-Rev. C, 25-Oct-10 www.vishay.com 7 Package Information www.vishay.com Vishay Siliconix SC-89 6-Leads (SOT-563F) E1/2 2 3 aaa D e1 4 C 2x 4 A B D 6 5 4 SECTION B-B C E/2 2 E E1 3 6 2x DETAIL “A” aaa C 1 5 2 2x 3 bbb C e B 6x b 4 ddd M C A–B D L1 A1 L A A1 SEE DETAIL “A” Notes 1. Dimensions in millimeters. 2. Dimension D does not include mold flash, protrusions or gate burrs. Mold flush, protrusions or gate burrs shall not exceed 0.15 mm per dimension E1 does not include interlead flash or protrusion, interlead flash or protrusion shall not exceed 0.15 mm per side. 3. Dimensions D and E1 are determined at the outmost extremes of the plastic body exclusive of mold flash, the bar burrs, gate burrs and interlead flash, but including any mismatch between the top and the bottom of the plastic body. 4. Datums A, B and D to be determined 0.10 mm from the lead tip. 5. Terminal numbers are shown for reference only. 6. These dimensions apply to the flat section of the lead between 0.08 mm and 0.15 mm from the lead tip. Revision: 11-Aug-14 DIM. MILLIMETERS MIN. NOM. A 0.56 0.58 MAX. 0.60 A1 0 0.02 0.10 b 0.15 0.22 0.30 0.18 c 0.10 0.14 D 1.50 1.60 1.70 E 1.50 1.60 1.70 1.25 E1 1.15 1.20 e 0.45 0.50 0.55 e1 0.95 1.00 1.05 L 0.25 0.35 0.50 L1 0.10 0.20 0.30 C14-0439-Rev. C, 11-Aug-14 DWG: 5880 Document Number: 71612 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SC-89: 6-Lead 0.051 0.012 0.020 (0.300) (0.500) 0.019 (0.478) 0.031 (0.798) 0.069 (1.753) (1.300) 0.051 (0.201) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72605 Revision: 21-Jan-08 www.vishay.com 21 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000