BAS86-M www.vishay.com Vishay Semiconductors Small Signal Schottky Diode FEATURES • For general purpose applications • This diode features low turn-on voltage. The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring • The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications • AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 MECHANICAL DATA Case: MiniMELF SOD-80 Weight: approx. 31 mg Cathode band color: black Packaging codes/options: 18/10K per 13" reel (8 mm tape), 10K/box 08/2.5K per 7" reel (8 mm tape), 12.5K/box APPLICATIONS • Applications where a very low forward voltage is required PARTS TABLE PART BAS86-M ORDERING CODE INTERNAL CONSTRUCTION REMARKS BAS85-M-18 or BAS86-M-08 Single diode Tape and reel ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER SYMBOL VALUE Continuous reverse voltage TEST CONDITION VR 50 V Forward continuous current (1) IF 200 mA IFRM 500 mA Ptot 200 mW tp 1 s, 0.5 Repetitive peak forward current (1) Power dissipation (1) UNIT Note (1) Valid provided that electrodes are kept at ambient temperature THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Thermal resistance junction to ambient air (1) SYMBOL VALUE UNIT RthJA 300 K/W Tj 125 °C Tamb - 65 to + 125 °C TS - 65 to + 150 °C Junction temperature Ambient operating temperature range Storage temperature range Note (1) Valid provided that electrodes are kept at ambient temperature ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. Reverse breakdown voltage IR = 10 μA (pulsed) V(BR) 50 Leakage current Forward voltage Diode capacitance Reverse recovery time Rev. 1.1, 21-Jan-13 TYP. MAX. UNIT V VR = 40 V IR 5 μA Pulse test tp < 300 μs, IF = 0.1 mA, < 2 % VF 200 300 mV Pulse test tp < 300 μs, IF = 1 mA, < 2 % VF 275 380 mV Pulse test tp < 300 μs, IF = 10 mA, < 2 % VF 365 450 mV Pulse test tp < 300 μs, IF = 30 mA, < 2 % VF 460 600 mV Pulse test tp < 300 μs, IF = 100 mA, < 2 % VF 700 900 mV VR = 1 V, f = 1 MHz CD 8 pF IF = 10 mA, IR = 10 mA, iR = 1 mA trr 5 ns Document Number: 83402 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BAS86-M www.vishay.com Vishay Semiconductors 10 500 9 VR = 50 V 450 400 350 300 250 PR - Limit at 100 % VR 200 150 PR - Limit at 80 % VR R thJA = 540 K/W 100 50 0 25 75 100 125 150 15830 Fig. 1 - Max. Reverse Power Dissipation vs. Junction Temperature f = 1 MHz 8 7 6 5 4 3 2 1 0 50 Tj - Junction Temperature (°C) 15827 C D - Diode Capacitance (pF) PR - Reverse Power Dissipation (mW) TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 0.1 1 10 100 V R - Reverse Voltage (V) Fig. 4 - Diode Capacitance vs. Reverse Voltage 10000 I R - Reverse Current (µA) V R = V RRM 1000 100 10 1 25 50 75 100 125 150 Tj - Junction Temperature (°C) 15828 Fig. 2 - Reverse Current vs. Junction Temperature 1000 IF - Forward Current (A) Tj = 125 °C 100 Tj = 25 °C 10 1 0.1 0 15829 0.5 1.0 1.5 V F - Forward Voltage (V) Fig. 3 - Forward Current vs. Forward Voltage Rev. 1.1, 21-Jan-13 Document Number: 83402 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BAS86-M www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters (inches): MiniMELF SOD-80 1.6 (0.063) 1.4 (0.055) Cathode indification * 0.47 (0.019) max. 3.7 (0.146) 3.3 (0.130) * The gap between plug and glass can be either on cathode or anode side 2.5 (0.098) max. 1.25 (0.49) min. 2 (0.079) min. Foot print recommendation: Document no.:6.560-5005.01-4 Rev. 8 - Date: 07.June.2006 5 (0.197) ref. 96 12070 Rev. 1.1, 21-Jan-13 Document Number: 83402 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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