VFT1080C-M3/4W

VFT1080C
www.vishay.com
Vishay General Semiconductor
Dual Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.49 V at IF = 3 A
FEATURES
TMBS ®
• Trench MOS Schottky technology
ITO-220AB
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder bath temperature 275 °C max. 10 s,
per JESD 22-B106
1
2
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
3
VFT1080C
PIN 1
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
PIN 2
PIN 3
MECHANICAL DATA
PRIMARY CHARACTERISTICS
IF(AV)
2x5A
VRRM
80 V
IFSM
80 A
VF at IF = 5 A
0.57 V
TJ max.
150 °C
Package
ITO-220AB
Diode variation
Dual Common Cathode
Case: ITO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
per
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(fig. 1)
SYMBOL
VFT1080C
UNIT
VRRM
80
V
per device
per diode
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
10
IF(AV)
A
5
IFSM
80
A
dV/dt
10 000
V/μs
Isolation voltage from termal to heatsink t = 1 min
VAC
1500
V
Operating junction and storage temperature range
TJ, TSTG
-55 to +150
°C
Voltage rate of change (rated VR)
Revision: 28-Oct-13
Document Number: 89258
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VFT1080C
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
IF = 3 A
Instantaneous forward voltage per diode
IF = 5 A
IF = 3 A
IF = 5 A
VR = 80 V
Reverse current per diode
SYMBOL
TA = 25 °C
VF (1)
TA = 125 °C
TA = 25 °C
IR (2)
TA = 125 °C
TYP.
MAX.
0.54
-
UNIT
0.63
0.72
0.49
-
0.57
0.66
12
400
μA
6
15
mA
V
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width  40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VFT1080C
UNIT
6.5
per diode
Typical thermal resistance
°C/W
RJC
per device
5.5
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
ITO-220AB
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
1.70
4W
50/tube
Tube
VFT1080C-M3/4W
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
4.0
D = 0.8
Resistive or Inductive Load
3.5
10
Average Power Loss (W)
Average Forward Current (A)
12
8
6
4
2
3.0
D = 0.2
2.5
D = 0.5
D = 0.3
D = 1.0
D = 0.1
2.0
T
1.5
1.0
0.5
0
D = tp/T
tp
0
0
25
50
75
100
125
150
175
0
1
2
3
4
5
6
Case Temperature (°C)
Average Forward Current (A)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Dissipation Characteristics
Revision: 28-Oct-13
Document Number: 89258
2
For technical questions within your region: [email protected]vishay.com, [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VFT1080C
www.vishay.com
Vishay General Semiconductor
Transient Thermal Impedance (°C/W)
Instantaneous Forward Current (A)
100
TA = 150 °C
TA = 125 °C
10
1
TA = 100 °C
0.1
0.01
TA = 25 °C
0.001
0.2
0.4
0.6
0.8
1.0
1.4
1.2
Junction to Case
1
0.01
0.1
10
1
100
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Transient Thermal Impedance
100
1000
TA = 150 °C
Junction Capacitance (pF)
Instantaneous Reverse Current (mA)
0
10
10
TA = 125 °C
TA = 100 °C
1
0.1
0.01
TA = 25 °C
0.001
20
30
40
50
60
70
80
100
10
0.1
100
90
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1
10
Percent of Rated Peak Reverse Voltage (%)
Reverse Voltage (V)
Fig. 4 - Typical Reverse Characteristics
Fig. 6 - Typical Junction Capacitance
100
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
ITO-220AB
0.190 (4.83)
0.170 (4.32)
0.404 (10.26)
0.384 (9.75)
0.110 (2.79)
0.100 (2.54)
0.076 (1.93) REF.
0.076 (1.93) REF.
45° REF.
7° REF.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.600 (15.24)
0.580 (14.73)
0.671 (17.04)
0.651 (16.54)
PIN
1
2
0.135 (3.43) DIA.
0.122 (3.08) DIA.
7° REF.
0.350 (8.89)
0.330 (8.38)
3
7° REF.
0.560 (14.22)
0.530 (13.46)
0.057 (1.45)
0.045 (1.14)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
0.191 (4.85)
0.171 (4.35)
0.057 (1.45)
0.045 (1.14)
0.035 (0.89)
0.025 (0.64)
0.110 (2.79)
0.100 (2.54)
0.028 (0.71)
0.020 (0.51)
0.205 (5.21)
0.195 (4.95)
Revision: 28-Oct-13
Document Number: 89258
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
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Revision: 02-Oct-12
1
Document Number: 91000