TEMT7100X01 Datasheet

TEMT7100X01
www.vishay.com
Vishay Semiconductors
Silicon Phototransistor in 0805 Package
FEATURES
•
•
•
•
•
•
Package type: surface mount
Package form: 0805
Dimensions (L x W x H in mm): 2 x 1.25 x 0.85
AEC-Q101 qualified
High photo sensitivity
Daylight blocking filter matches with 830 nm
to 950 nm IR emitters
• Angle of half sensitivity: ϕ = ± 60°
• Package matched with IR emitter series
VSMB1940X01
• Floor life: 168 h, MSL 3, acc. J-STD-020
• Lead (Pb)-free reflow soldering
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
20043-1
DESCRIPTION
Note
** Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
TEMT7100X01 is a silicon NPN epitaxial planar
phototransistor with daylight blocking filter in a miniature,
black 0805 package for surface mounting. Filter bandwidth
is matched with 830 nm to 950 nm IR emitters.
APPLICATIONS
•
•
•
•
•
•
Detector in automotive applications
Photo interrupters
Miniature switches
Counters
Encoders
Position sensors
PRODUCT SUMMARY
COMPONENT
IcaE (μA)
ϕ (deg)
λ0.5 (nm)
TEMT7100X01
225 to 675
± 60
750 to 1010
Note
• Test condition see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
PACKAGING
REMARKS
PACKAGE FORM
TEMT7100X01
Tape and reel
MOQ: 3000 pcs, 3000 pcs/reel
0805
Note
• MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
Collector emitter voltage
VCEO
20
V
Emitter collector voltage
VECO
7
V
Collector current
Power power dissipation
Tamb ≤ 55 °C
Junction temperature
UNIT
IC
20
mA
PV
100
mW
Tj
100
°C
Operating temperature range
Tamb
- 40 to + 100
°C
Storage temperature range
Tstg
- 40 to + 100
°C
Acc. reflow profile fig. 8
Tsd
260
°C
Acc. J-STD-051
RthJA
270
K/W
Soldering temperature
Thermal resistance junction/ambient
Rev. 1.2, 18-Oct-11
Document Number: 81770
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TEMT7100X01
www.vishay.com
Vishay Semiconductors
PV - Power Dissipation (mW)
120
100
80
60
RthJA = 270 K/W
40
20
0
0
10
20 30 40
50 60 70 80
90 100
Tamb - Ambient Temperature (°C)
21331
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
IC = 0.1 mA
VCEO
20
TYP.
MAX.
UNIT
VCE = 5 V, E = 0
ICEO
1
100
nA
VCE = 0 V, f = 1 MHz, E = 0
CCEO
25
Ee = 1 mW/cm2, λ = 950 nm,
VCE = 5 V
ICA
Collector emitter breakdown voltage
Collector dark current
Collector emitter capacitance
Collector light current
V
225
pF
450
675
μA
Angle of half sensitivity
ϕ
± 60
deg
Wavelength of peak sensitivity
λp
870
nm
Range of spectral bandwidth
λ0.5
750 to 1010
Collector emitter saturation voltage
Temperature coefficient of Ica
IC = 0.05 mA
VCEsat
Ee = 1 mW/cm2, λ = 950 nm,
VCE = 5 V
TkIca
nm
0.4
V
1.1
%/K
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
10
Ica - Collector Light Current (mA)
ICE0 - Collector Dark Current (nA)
10 000
IF = 0
1000
VCE = 70 V
VCE = 25 V
VCE = 5 V
100
10
1
0
20594
10
20
30
40
50
60
70
80
90 100
Tamb - Ambient Temperature (°C)
Fig. 2 - Collector Dark Current vs. Ambient Temperature
Rev. 1.2, 18-Oct-11
1
0.1
VCE = 5 V
0.01
0.001
0.01
21551
0.1
1
10
Ee - Irradiance (mW/cm²)
Fig. 3 - Collector Light Current vs. Irradiance
Document Number: 81770
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TEMT7100X01
www.vishay.com
Vishay Semiconductors
0°
100
20°
80
RL = 100 Ω
70
60
50
40
tf
30
tr
20
10
40°
1.0
0.9
50°
0.8
60°
70°
0.7
ϕ - Angular Displacement
Ie, rel - Relative Radiant Sensitivity
30°
90
tr/tf - Rise/Fall Time (µs)
10°
80°
0
0
250
0.6
500 750 1000 1250 1500 1750 2000
0.4
0.2
0
94 8013
IC - Collector Current (µA)
20599
Fig. 4 - Rise/Fall Time vs. Collector Current
Fig. 6 - Relative Radiant Sensitivity vs. Angular Displacement
2.0
Ica rel - Relative Collector Current
S(λ)rel - Relative Spectral Sensitivity
1.2
1.0
0.8
0.6
0.4
0.2
0
600
VCE = 5 V
Ee = 1 mW/cm2
λ = 950 nm
1.6
1.4
1.2
1.0
0.8
0.6
700
800
900
1000
0
1100
λ - Wavelength (nm)
21552
94 8239
Fig. 5 - Relative Spectral Sensitivity vs. Wavelength
REFLOW SOLDER PROFILE
20
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 7 - Relative Collector Current vs. Ambient Temperature
DRYPACK
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
300
max. 260 °C
245 °C
255 °C
240 °C
217 °C
250
Temperature (°C)
1.8
Floor life (time between soldering and removing from MBB)
must not exceed the time indicated on MBB label:
Floor life: 168 h
Conditions: Tamb < 30 °C, RH < 60 %
Moisture sensitivity level 3, acc. to J-STD-020.
200
max. 30 s
150
max. 100 s
max. 120 s
100
max. ramp up 3 °C/s max. ramp down 6 °C/s
50
0
0
19841
50
100
150
200
250
FLOOR LIFE
300
Time (s)
DRYING
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
Fig. 8 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020
Rev. 1.2, 18-Oct-11
Document Number: 81770
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TEMT7100X01
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
19757
Rev. 1.2, 18-Oct-11
Document Number: 81770
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TEMT7100X01
www.vishay.com
Vishay Semiconductors
BLISTER TAPE DIMENSIONS in millimeters
Quantity per reel: 3000 pcs
20690
Rev. 1.2, 18-Oct-11
Document Number: 81770
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TEMT7100X01
www.vishay.com
Vishay Semiconductors
REEL DIMENSIONS in millimeters
8.4 +2.5
Ø 177.8 max.
Ø 55 min.
8.4 +0.15
Z
Form of the leave open
of the wheel is supplier specific.
14.4 max.
Ø 20.2 min.
1.5 min.
Ø 13 - 0.2
+ 0.5
Z 2:1
Drawing-No.: 9.800-5096.01-4
Issue: 2; 26.04.10
20875
Rev. 1.2, 18-Oct-11
technical drawings
according to DIN
specifications
Document Number: 81770
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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Revision: 02-Oct-12
1
Document Number: 91000