2N6659, 2N6659-2 Datasheet

2N6659, 2N6659-2
www.vishay.com
Vishay Siliconix
N-Channel 35 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
•
•
•
•
•
•
35
RDS(on) () at VGS = 10 V
1.8
Configuration
Single
TO-205AD
(TO-39)
BENEFITS
•
•
•
•
•
•
S
1
2
Military Qualified
Low On-Resistence: 1.3 
Low Threshold: 1.7 V
Low Input Capacitance: 35 pF
Fast Switching Speed: 8 ns
Low Input and Output Leakage
APPLICATIONS
3
G
Guaranteed Reliability
Low Offset Voltage
Low-Voltage Operation
Easily Driven Without Buffer
High-Speed Circuits
Low Error Voltage
• Hi-Rel Systems
• Direct Logic-Level Interface: TTL/CMOS
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
• Battery Operated Systems
• Solid-State Relays
D
Top View
ORDERING INFORMATION
PART
PACKAGE
2N6659
TO-205AD
(TO-39)
2N6659-2
DESCRIPTION/DSCC
PART NUMBER
VISHAY ORDERING
PART NUMBER
Commercial
2N6659
Commercial, Lead (Pb)-free
2N6659-E3
See -2 Flow Document
2N6659-2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
35
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain
TC = 25 °C
TC = 100 °C
Currenta
Maximum Power Dissipation
ID
IDM
TC = 25 °C
TC = 100 °C
PD
V
1.4
1
A
3
6.25
2.5
Thermal Resistance, Junction-to-Ambientb
RthJA
170
Thermal Resistance, Junction-to-Case
RthJC
20
TJ, Tstg
- 55 to 150
Operating Junction and Storage Temperature Range
UNIT
W
°C/W
°C
Notes
a. Pulse width limited by maximum junction temperature.
b. Not required by military spec.
S12-0591-Rev. A, 19-Mar-12
Document Number: 63868
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
2N6659, 2N6659-2
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TA = 25 °C, unless otherwise noted)
LIMITS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.a
MAX.
UNIT
VDS
VDS = 0 V, ID = 10 μA
35
75
-
V
VGS(th)
VDS = VGS, ID = 1 mA
0.8
1.7
2
-
-
± 100
-
-
± 500
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
VDS = 0 V
Gate-Body Leakage
IGSS
VGS = ± 15 V
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V
On-State Drain Current
ID(on)
VGS = 10 V
VDS = 10 V
1.5
3
-
VGS = 5 V
ID = 0.3 A
-
2
5
ID = 1 A
-
1.3
1.8
Drain-Source On-State Resistanceb
RDS(on)
TC = 125 °C
VDS = 35 V
VDS = 28 V
VGS = 10 V
TC = 125 °C
TC = 125 °C
-
-
10
-
-
500
nA
μA
A

-
2.4
3.6
Forward Transconductanceb
gfs
VDS = 7.5 V, ID = 0.525 A
170
350
-
mS
Diode Forward Voltage
VSD
IS = 0.99 A, VGS = 0 V
-
0.8
-
V
-
35
50
-
25
40
-
7
10
-
30
40
-
8
10
-
8.5
10
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Drain-Source Capacitance
Cds
VGS = 0 V
VDS = 25 V, f = 1 MHz
pF
Switchingc
Turn-On Time
tON
Turn-Off Time
tOFF
VDD = 25 V, RL = 23 
ID  1 A, VGEN = 10 V, Rg = 25 
ns
Notes
a. FOR DESIGN AID ONLY, not subject to production testing.
b. Pulse test: PW  300 μs duty cycle  2 %.
c. Switching time is essentially independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S12-0591-Rev. A, 19-Mar-12
Document Number: 63868
2
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
2N6659, 2N6659-2
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
2.0
VGS = 10 V
2.8 V
1.6
80
7V
I D - Drain Current (mA)
I D - Drain Current (A)
VGS = 10 V
8V
6V
1.2
5V
0.8
4V
2.6 V
60
2.4 V
40
2.2 V
20
0.4
3V
2V
0
0
1
2
3
4
1.8 V
2.0 V
0
0
5
0.4
0.8
1.2
1.6
2.0
VDS - Drain-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Ohmic Region Characteristics
Output Characteristics for Low Gate Drive
1.0
2.8
TJ = - 55 °C
25 °C
2.4
VDS = 15 V
R DS(on) - On-Resistance (Ω)
I D - Drain Current (A)
0.8
125 °C
0.6
0.4
0.2
1.0 A
0.5 A
2.0
1.6
1.2
0.8
ID = 0.1 A
0.4
0
0
0
2
4
6
8
0
10
4
VGS - Gate-Source Voltage (V)
R DS(on) - Drain-Source On-Resistance (Ω)
2.5
2.0
VGS = 10 V
1.5
1.0
0.5
0
0
0.4
0.8
1.2
20
On-Resistance vs. Gate-to-Source Voltage
R DS(on) - Drain-Source On-Resistance (Normalized)
Transfer Characteristics
8
12
16
VGS - Gate-Source Voltage (V)
1.6
2.0
2.25
VGS = 10 V
2.00
I D = 1.0 A
1.75
0.2 A
1.50
1.25
1.00
0.75
0.50
- 50
- 10
30
70
110
150
I D - Drain Current (A)
TJ - Junction Temperature (°C)
On-Resistance vs. Drain Current
Normalized On-Resistance vs. Junction Temperature
S12-0591-Rev. A, 19-Mar-12
Document Number: 63868
3
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
2N6659, 2N6659-2
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
120
VGS = 0 V
VDS = 5 V
f = 1 MHz
100
C - Capacitance (pF)
I D - Drain Current (mA)
TJ = 150 °C
1
25 °C
0.1
80
60
40
C iss
C oss
20
C rss
- 55 °C
125 °C
0
0.01
0.5
1.0
1.5
2.0
VGS - Gate-to-Source Voltage (V)
0
10
20
30
40
VDS - Drain-to-Source Voltage (V)
Threshold Region
Capacitance
100
15.0
I D = 1.0 A
50
12.5
VDS = 30 V
10.0
t - Switching Time (ns)
VGS - Gate-to-Source Voltage (V)
50
48 V
7.5
5.0
2.5
V DD = 25 V
Rg = 25 Ω
V GS = 0 V to 10 V
20
10
td(off)
5
tr
td(on)
tf
2
0
0
100
200
300
400
500
Q g - Total Gate Charge (pC)
600
1
0.1
Gate Charge
1
I D - Drain Current (A)
10
Load Condition Effects on Switching
1.0
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
Single Pulse
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJC = 20 °C/W
0.01
3. TJM - TC = PDMZthJC(t)
0.01
0.1
1.0
10
100
t1 - Square Wave Pulse Duration (s)
1K
10 K
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?70223.
S12-0591-Rev. A, 19-Mar-12
Document Number: 63868
4
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000