VSMG3700 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 850 nm • High reliability • High radiant power • High radiant intensity 948553 • Angle of half intensity: ϕ = ± 60° • Low forward voltage • Suitable for high pulse current operation • High modulation band width: fc = 18 MHz DESCRIPTION • Good spectral matching with Si photodetectors VSMG3700 is an infrared, 850 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a PLCC-2 package for surface mounting (SMD). • Floor life: 168 h, MSL 3, acc. J-STD-020 • Lead (Pb)-free reflow soldering • AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Infrared radiation source for operation with CMOS cameras (illumination) • High speed IR data transmission PRODUCT SUMMARY COMPONENT Ie (mW/sr) ϕ (deg) λp (nm) tr (ns) 10 ± 60 850 20 VSMG3700 Note • Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSMG3700-GS08 Tape and reel MOQ: 7500 pcs, 1500 pcs/reel PLCC-2 VSMG3700-GS18 Tape and reel MOQ: 8000 pcs, 8000 pcs/reel PLCC-2 Note • MOQ: minimum order quantity Rev. 1.5, 24-Sep-13 Document Number: 81471 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMG3700 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT VR 5 V Reverse voltage Forward current IF 100 mA Peak forward current tp/T = 0.5, tp = 100 μs IFM 200 mA Surge forward current tp = 100 μs IFSM 1.5 A PV 180 mW Power dissipation Junction temperature Operating temperature range Tj 100 °C Tamb -40 to +85 °C Storage temperature range Soldering temperature Thermal resistance junction/ambient Tstg -40 to +100 °C acc. figure 8, J-STD-020 Tsd 260 °C J-STD-051, soldered on PCB RthJA 250 K/W 120 200 IF - Forward Current (mA) PV - Power Dissipation (mW) 180 160 140 120 100 RthJA = 250 K/W 80 60 40 100 80 60 RthJA = 250 K/W 40 20 20 0 0 0 10 21339 20 30 40 50 60 70 80 0 90 100 Tamb - Ambient Temperature (°C) 10 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) 21340 Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Forward voltage Temperature coefficient of VF Reverse current Junction capacitance Radiant intensity Radiant power Temperature coefficient of φe TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT 1.8 V IF = 100 mA, tp = 20 ms VF 1.5 IF = 1 A, tp = 100 μs VF 2.3 V IF = 1 mA TKVF -1.8 mV/K VR = 5 V IR VR = 0 V, f = 1 MHz, E = 0 Cj IF = 100 mA, tp = 20 ms Ie 10 μA 22 mW/sr 125 6 10 pF IF = 1 A, tp = 100 μs Ie 100 mW/sr IF = 100 mA, tp = 20 ms φe 40 mW IF = 100 mA TKφe -0.35 %/K ϕ ± 60 deg nm Angle of half intensity Peak wavelength IF = 100 mA λp 850 Spectral bandwidth IF = 100 mA Δλ 40 nm Temperature coefficient of λp IF = 100 mA TKλp 0.25 nm/K Rise time IF = 100 mA tr 20 ns Fall time IF = 100 mA tf 13 ns IDC = 70 mA, IAC = 30 mA pp fc 18 MHz d 0.44 mm Cut-off frequency Virtual source diameter Rev. 1.5, 24-Sep-13 Document Number: 81471 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMG3700 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 1.25 10 000 0.01 1000 0.02 0.05 100 0.2 0.5 DC 0.1 10 1 0.01 0.75 0.5 0.25 0 0.1 1 10 100 tp - Pulse Length (ms) 95 9985 1.0 800 Fig. 6 - Relative Radiant Power vs. Wavelength 0° 1000 10° 20° 30° Ie, rel - Relative Radiant Sensitivity IF - Forward Current (mA) 900 λ- Wavelength (nm) 16972 Fig. 3 - Pulse Forward Current vs. Pulse Duration 850 100 tp = 100 µs tp/T = 0.001 10 40° 1.0 0.9 50° 0.8 60° 70° 0.7 ϕ - Angular Displacement IF - Forward Current (mA) tp/T = 0.005 Φe, rel - Relative Radiant Power Tamb < 60 °C 80° 1 0 1 2 3 0.6 4 0.4 0.2 0 94 8013 VF - Forward Voltage (V) 18873_1 Fig. 4 - Forward Current vs. Forward Voltage Fig. 7 - Relative Radiant Intensity vs. Angular Displacement Ie - Radiant Intensity (mW/sr) 100 10 tp = 1 µs 1 0.1 1 18874 10 100 1000 IF - Forward Pulse Current (mA) Fig. 5 - Radiant Intensity vs. Forward Current Rev. 1.5, 24-Sep-13 Document Number: 81471 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMG3700 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters 0.9 1.75±0.1 3.5±0.2 0.8 Technical drawings according to DIN specifications A C 2.2 2.8±0.15 Pin identification Dimensions in mm Drawing-No.: 6.541-5067.01-4 Issue: 6; 23.09.13 Ø2.4 3 +0.15 Mounting Pad Layout Area covered with solderresist 4 2.6 (2.8) 1.2 1.6 (1.9) 4 Dimensions: Reflow and vapor phase (wave soldering) SOLDER PROFILE DRYPACK 300 255 °C 240 °C 217 °C 250 Temperature (°C) max. 260 °C 245 °C FLOOR LIFE 200 max. 30 s 150 max. 100 s max. 120 s 100 max. ramp up 3 °C/s max. ramp down 6 °C/s 50 Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: Floor life: 168 h Conditions: Tamb < 30 °C, RH < 60 % Moisture sensitivity level 3, acc. to J-STD-020. DRYING 0 0 19841 50 100 150 200 250 300 Time (s) Fig. 8 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020 Rev. 1.5, 24-Sep-13 In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 %. Document Number: 81471 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMG3700 www.vishay.com Vishay Semiconductors TAPE AND REEL PLCC-2 components are packed in antistatic blister tape (DIN IEC (CO) 564) for automatic component insertion. Cavities of blister tape are covered with adhesive tape. 10.0 9.0 120° 4.5 3.5 13.00 12.75 2.5 1.5 63.5 60.5 Adhesive tape Identification Label: Vishay type group tape code production code quantity Blister tape Component cavity 14.4 max. 180 178 94 8665 Fig. 12 - Dimensions of Reel-GS08 94 8670 Fig. 9 - Blister Tape 10.4 8.4 120° 2.2 2.0 3.5 3.1 4.5 3.5 5.75 5.25 3.6 3.4 8.3 7.7 1.85 1.65 1.6 1.4 4.1 3.9 4.1 3.9 0.25 2.05 1.95 94 8668 Fig. 10 - Tape Dimensions in mm for PLCC-2 13.00 12.75 2.5 1.5 4.0 3.6 Identification Label: Vishay type group tape code production code quantity 62.5 60.0 321 329 14.4 max. 18857 Fig. 13 - Dimensions of Reel-GS18 MISSING DEVICES A maximum of 0.5 % of the total number of components per reel may be missing, exclusively missing components at the beginning and at the end of the reel. A maximum of three consecutive components may be missing, provided this gap is followed by six consecutive components. De-reeling direction COVER TAPE REMOVAL FORCE The removal force lies between 0.1 N and 1.0 N at a removal speed of 5 mm/s. In order to prevent components from popping out of the blisters, the cover tape must be pulled off at an angle of 180° with regard to the feed direction. 94 8158 > 160 mm Tape leader 40 empty compartments min. 75 empty compartments Carrier leader Carrier trailer Fig. 11 - Beginning and End of Reel The tape leader is at least 160 mm and is followed by a carrier tape leader with at least 40 empty compartments. The tape leader may include the carrier tape as long as the cover tape is not connected to the carrier tape. The least component is followed by a carrier tape trailer with a least 75 empty compartments and sealed with cover tape. Rev. 1.5, 24-Sep-13 Document Number: 81471 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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