Alternative Device Available SFH615AA, SFH615AGB, SFH615AGR, SFH615ABM, SFH615ABL, SFH615AY, SFH615AB www.vishay.com Vishay Semiconductors Optocoupler, Phototransistor Output, High Reliability, 5300 VRMS FEATURES • Low CTR degradation A 1 4 C • Good CTR linearity depending on forward current C 2 3 E • Isolation test voltage, 5300 VRMS • High collector emitter voltage, VCEO = 70 V i179060_1 • Low saturation voltage • Fast switching times i179060 • Temperature stable DESCRIPTION • Low coupling capacitance The SFH615XXX features a large assortment of current transfer ratio, low coupling capacitance and high isolation voltage. These couplers have a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a plastic DIP-4 package. • End stackable, 0.100" (2.54 mm) spacing The coupling devices are designed for signal transmission between two electrically separated circuits. The couplers are end-stackable with 2.54 mm lead spacing. Creepage and clearance distances of > 8 mm are achieved with option 6. This version complies with 60950 (DIN VDE 0805) for reinforced insulation up to operation voltage of 400 VRMS or DC. • High common mode interference immunity (unconnected base) • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 AGENCY APPROVALS • UL1577, file no. E52744 system code H or J, double protection • DIN EN 60747-5-5 (VDE 0884) available with option 1 • BSI IEC 60950; IEC 60065 ORDERING INFORMATION PART SFH615AA REMARKS CTR 50 % to 600 %, DIP-4 SFH615AB CTR 80 % to 260 %, DIP-4 SFH615ABL CTR 200 % to 600 %, DIP-4 SFH615ABM CTR 200 % to 400 %, DIP-4 SFH615AGB CTR 100 % to 600 %, DIP-4 SFH615AGR CTR 100 % to 300 %, DIP-4 SFH615AY SFH615AA-X006 SFH615AA-X007 SFH615ABM-X006 CTR 50 % to 150 %, DIP-4 CTR 50 % to 600 %, DIP-4 400 mil (option 6) CTR 50 % to 600 %, SMD-4 (option 7) CTR 200 % to 400 %, DIP-4 400 mil (option 6) SFH615ABM-X007 CTR 200 % to 400 %, SMD-4 (option 7) SFH615AGB-X006 CTR 100 % to 600 %, DIP-4 400 mil (option 6) SFH615AGB-X009 CTR 100 % to 600 %, SMD-4 (option 9) SFH615AGR-X006 CTR 100 % to 300 %, DIP-4 400 mil (option 6) SFH615AGR-X007 CTR 100 % to 300 %, SMD-4 (option 7) SFH615AY-X006 CTR 50 % to 150 %, DIP-4 400 mil (option 6) SFH615AY-X008 CTR 50 % to 150 %,SMD-4 (option 8) SFH615AY-X009 CTR 50 % to 150 %,SMD-4 (option 9) Note • For additional information on the available options refer to option information. Rev. 1.9, 23-May-13 Document Number: 83672 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Alternative Device Available SFH615AA, SFH615AGB, SFH615AGR, SFH615ABM, SFH615ABL, SFH615AY, SFH615AB www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION INPUT Reverse voltage DC forward current Surge forward current Power dissipation OUTPUT Collector emitter voltage Emitter collector voltage tP 10 ms Collector current tP 10 ms Total power dissipation COUPLER Isolation test voltage between emitter and detector Creepage distance Clearance distance Isolation thickness between emitter and detector Comparative tracking index per DIN IEC 112/VDE 0303, part 1 Isolation resistance VIO = 500 V, Tamb = 25 °C VIO = 500 V, Tamb = 100 °C Storage temperature range Ambient temperature range Soldering temperature (1) max. 10 s, dip soldering distance to seating plane 1.5 mm SYMBOL VALUE UNIT VR IF IFSM Pdiss 6 60 2.5 100 V mA A mW VCE VEC IC IC Pdiss 70 7 50 100 150 V V mA mA mW VISO 5300 VRMS 7 7 mm mm CTI 175 RIO RIO Tstg Tamb 1012 1011 - 55 to + 150 - 55 to + 100 °C °C Tsld 260 °C Notes • Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through hole devices (DIP). ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER INPUT Forward voltage Reverse current Capacitance Thermal resistance OUTPUT Collector emitter capacitance Thermal resistance Collector emitter saturation voltage Coupling capacitance COUPLER Collector emitter leakage current TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT 1.65 10 V μA pF K/W IF = 60 mA VR = 6 V VR = 0 V, f = 1 MHz VF IR CO Rthja 1.25 0.01 13 750 VCE = 5 V, f = 1 MHz CCE Rthja 5.2 500 IF = 10 mA, IC = 2.5 mA VCEsat 0.25 CC 0.4 ICEO ICEO ICEO ICEO ICEO ICEO ICEO 10 10 10 10 10 10 10 VCEO = 10 V SFH615AA SFH615AGB SFH615AGR SFH615ABM SFH615ABL SFH615AY SFH615AB pF K/W 0.4 V pF 100 100 100 100 100 100 100 nA nA nA nA nA nA nA Note • Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Rev. 1.9, 23-May-13 Document Number: 83672 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Alternative Device Available SFH615AA, SFH615AGB, SFH615AGR, SFH615ABM, SFH615ABL, SFH615AY, SFH615AB www.vishay.com Vishay Semiconductors CURRENT TRANSFER RATIO PARAMETER TEST CONDITION IC/IF IF = 5 mA, VCE = 5 V PART SYMBOL MIN. MAX. UNIT SFH615AA CTR 50 TYP. 600 % SFH615AGB CTR 100 600 % SFH615AGR CTR 100 300 % SFH615ABM CTR 200 400 % SFH615ABL CTR 200 600 % SFH615AY CTR 50 150 % SFH615AB CTR 80 260 % MIN. MAX. UNIT SWITCHING CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL Turn-on time IF = 5 mA ton TYP. 2 μs Turn-off time IF = 5 mA toff 25 μs TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 20 pF 1 kΩ IF C f = 1.0 MHz 15 VCC = 5 V 10 5 47 Ω CCE isfh615aa_01 0 10-2 10-1 100 isfh615aa_03 Fig. 1 - Switching Operation (with Saturation) % 103 IC IF 5 V 102 Fig. 3 - Transistor Capacitance (Typ.) vs. Collector Emitter Voltage IF IF = 10 mA, VCC = 5.0 V 101 Ve 120 mA 90 4 3 2 102 60 1 5 30 101 - 25 isfh615aa_02 0 0 25 50 °C 75 TA Fig. 2 - Current Transfer Ratio (Typ.) vs. Temperature Rev. 1.9, 23-May-13 0 isfh615aa_04 25 50 75 TA °C 100 Fig. 4 - Permissible Diode Forward Current vs. Ambient Temperature Document Number: 83672 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Alternative Device Available SFH615AA, SFH615AGB, SFH615AGR, SFH615ABM, SFH615ABL, SFH615AY, SFH615AB www.vishay.com Ic Vishay Semiconductors 1.2 30 mA VF IF = 14 mA IF = 12 mA 20 V 25 °C 50 °C 75 °C 1.1 IF = 10 mA IF = 8 mA 1.0 IF = 6 mA 10 IF = 4 mA IF = 1 mA 0 IF = 2 mA 0.9 0 5 10 V 15 VCE isfh615aa_05 104 mA 5 103 5 D=0 0.005 0.01 0.02 tp D= T 0.05 0.1 tp IF T Pulse cycle D = parameter 5 101 100 5 101 5 mA IF 102 Fig. 7 - Diode Forward Voltage (typ.) vs. Forward Current 200 Ptot mW 150 Transistor 100 0.2 102 5 isfh615aa_07 Fig. 5 - Output Characteristics (typ.) Collector Current vs. Collector Emitter Voltage IF 10-1 0.5 Diode DC 50 0 10-5 isfh615aa_06 10-4 10-3 10-2 10-1 100 s 101 tp Fig. 6 - Permissible Pulse Handling Capability Forward Current vs. Pulse Width Rev. 1.9, 23-May-13 0 isfh615aa_08 25 50 75 TA °C 100 Fig. 8 - Permissible Power Dissipation vs. Temperature Document Number: 83672 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Alternative Device Available SFH615AA, SFH615AGB, SFH615AGR, SFH615ABM, SFH615ABL, SFH615AY, SFH615AB www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in inches (millimeters) 2 1 Pin one ID 6.48 6.81 ISO method A 3 4 4.55 4.83 0.76 1.14 0.79 typ. 7.62 typ. 1.27 typ. 3.30 3.81 i178027 5.84 6.35 10° 4° typ. 0.508 0.89 0.46 0.56 2.79 3.30 0° to 15° 0.2 0.3 1.27 2.54 Option 9 9.53 10.03 7.62 ref. 0.102 0.249 0.25 typ. 0.51 1.02 8 min. 15° max. 18486 Rev. 1.9, 23-May-13 Document Number: 83672 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000