SS3P3 Datasheet

SS3P3
www.vishay.com
Vishay General Semiconductor
High Current Density Surface Mount
Schottky Barrier Rectifiers
FEATURES
• Very low profile - typical height of 1.0 mm
eSMP ® Series
Available
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency
• Low thermal resistance
• Meets MSL level 1, per
LF maximum peak of 260 °C
J-STD-020,
• AEC-Q101 qualified
DO-220AA (SMP)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
IF(AV)
3.0 A
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
VRRM
30 V
MECHANICAL DATA
IFSM
50 A
Case: DO-220AA (SMP)
EAS
11.25 mJ
VF
0.43 V
TJ max.
150 °C
Package
DO-220AA (SMP)
Diode variations
Single
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant, and
automotive grade
Terminals: Matte tin plated
J-STD-002 and JESD 22-B102
leads,
solderable
per
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SS3P3
Maximum repetitive peak reverse voltage
VRRM
30
V
Maximum average forward rectified current (fig. 1)
IF(AV)
3.0
A
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load
IFSM
50
A
Device marking code
Non-repetitive avalanche energy at TJ = 25 °C, IAS = 1.5 A, L = 10 mH
Voltage rate of change (rated VR)
Operating junction and storage temperature range
UNIT
33
EAS
11.25
mJ
dV/dt
10 000
V/μs
TJ, TSTG
-55 to +150
°C
Revision: 13-Apr-15
Document Number: 88944
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SS3P3
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Maximum instantaneous forward voltage
IF = 3 A
TJ = 25 °C
IF = 3 A
TJ = 125 °C
SYMBOL
VF (1)
TJ = 25 °C
Maximum reverse current at rated VR
4.0 V, 1 MHz
MAX.
UNIT
0.52
0.58
0.43
0.48
-
200
μA
9.0
20
mA
IR (2)
TJ = 125 °C
Typical junction capacitance
TYP.
CJ
V
130
pF
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width  40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Typical thermal resistance
(1)
SS3P3
RJA
(1)
95
RJL
(1)
15
RJC (1)
20
UNIT
°C/W
Note
(1) Thermal resistance from junction to ambient and junction to lead mounted on PCB with 5.0 mm x 5.0 mm copper pad areas. R
JL is measured 
at the terminal of cathode band. RJC is measured at the top center of the body
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
SS3P3-M3/84A
0.024
84A
3000
7" diameter plastic tape and reel
SS3P3-M3/85A
0.024
85A
10 000
13" diameter plastic tape and reel
SS3P3HM3/84A (1)
0.024
84A
3000
7" diameter plastic tape and reel
SS3P3HM3/85A (1)
0.024
85A
10 000
13" diameter plastic tape and reel
Note
(1) Automotive grade
RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted)
50
Peak Forward Surge Current (A)
Average Forward Rectified Current (A)
3.0
2.5
2.0
1.5
1.0
TL Measured
at the Cathode Band Terminal
0.5
0
40
30
20
10
0
80
90
100
110
120
130
140
150
1
10
100
Lead Temperature (°C)
Number of Cycles at 50 Hz
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Revision: 13-Apr-15
Document Number: 88944
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SS3P3
www.vishay.com
Vishay General Semiconductor
1000
Junction Capacitance (pF)
Instantaneous Forward Current (A)
100
TJ = 150 °C
10
TJ = 25 °C
1
TJ = 125 °C
10
0.1
0.1
0.3
0.5
0.7
0.9
1.1
0.1
1.3
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Junction Capacitance
1000
Transient Thermal Impedance (°C/W)
100 000
Instantaneous Reverse Leakage
Current (µA)
100
TJ = 150 °C
10 000
TJ = 125 °C
1000
100
TJ = 25 °C
10
1
0.1
10
20
30
40
50
60
70
80
90
100
10
1
0.01
100
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-220AA (SMP)
0.012 (0.30) REF.
Cathode Band
0.053 (1.35)
0.041 (1.05)
0.086 (2.18)
0.074 (1.88)
0.142 (3.61)
0.126 (3.19)
0.036 (0.91)
0.024 (0.61)
0.103 (2.60)
0.087 (2.20)
0.032 (0.80)
0.016 (0.40)
0.158 (4.00)
0.146 (3.70)
0.105
(2.67)
0.013 (0.35)
0.004 (0.10)
0.025 0.030
(0.635) (0.762)
0.045 (1.15)
0.033 (0.85)
0.012 (0.30) 0.018 (0.45)
0.000 (0.00) 0.006 (0.15)
0.100
(2.54)
0.050
(1.27)
Revision: 13-Apr-15
Document Number: 88944
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000