TSHF4410 Datasheet

TSHF4410
www.vishay.com
Vishay Semiconductors
High Speed Infrared Emitting Diode, 890 nm,
GaAlAs Double Hetero
FEATURES
• Package type: leaded
• Package form: T-1
• Dimensions (in mm): ∅ 3
• Peak wavelength: λp = 890 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 22°
94 8636
• Low forward voltage
• Suitable for high pulse current operation
• High modulation bandwidth: fc = 12 MHz
• Good spectral matching with Si photodetectors
DESCRIPTION
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TSHF4410 is an infrared, 890 nm emitting diode in GaAlAs
double hetero (DH) technology with high radiant power and
high speed, molded in a clear, untinted plastic package.
Note
** Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
APPLICATIONS
• Infrared high speed remote control and free air data
transmission systems with high modulation frequencies or
high data transmission rate requirements
• Transmission systems according to IrDA requirements
and for carrier frequency based systems (e.g. ASK/FSK coded, 450 kHz or 1.3 MHz)
• Smoke-automatic fire detectors
PRODUCT SUMMARY
COMPONENT
TSHF4410
Ie (mW/sr)
ϕ (deg)
λp (nm)
tr (ns)
40
± 22
890
30
Note
• Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
TSHF4410
PACKAGING
REMARKS
PACKAGE FORM
Bulk
MOQ: 5000 pcs, 5000 pcs/bulk
T-1
Note
• MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
SYMBOL
VALUE
Reverse voltage
VR
5
V
Forward current
IF
100
mA
PARAMETER
TEST CONDITION
UNIT
Peak forward current
tp/T = 0.5, tp = 100 μs
IFM
200
mA
Surge forward current
tp = 100 μs
IFSM
1.5
A
Rev. 1.2, 24-Aug-11
Document Number: 81276
1
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TSHF4410
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
SYMBOL
VALUE
UNIT
Power dissipation
TEST CONDITION
PV
180
mW
Junction temperature
Tj
100
°C
Operating temperature range
Tamb
- 40 to + 85
°C
Storage temperature range
Tstg
- 40 to + 100
°C
PARAMETER
Soldering temperature
t ≤ 5 s, 2 mm from case
Tsd
260
°C
Thermal resistance junction/ambient
J-STD-051, leads 7 mm,
soldered on PCB
RthJA
300
K/W
200
120
160
IF - Forward Current (mA)
PV - Power Dissipation (mW)
180
140
120
RthJA = 300 K/W
100
80
60
40
100
80
RthJA = 300 K/W
60
40
20
20
0
0
0
10
21311
20
30
40
50
60
70 80
90 100
0
Tamb - Ambient Temperature (°C)
21312
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
10
20 30 40
50 60 70 80
90 100
Tamb - Ambient Temperature (°C)
Fig. 1 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Temperature coefficient of VF
Reverse current
Junction capacitance
Radiant intensity
Radiant power
Temperature coefficient of φe
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
V
IF = 100 mA, tp = 20 ms
VF
1.5
1.8
IF = 1 A, tp = 100 μs
VF
2.4
3.0
IF = 1 mA
TKVF
- 1.8
V
mV/K
VR = 5 V
IR
VR = 0 V, f = 1 MHz, E = 0
Cj
125
pF
IF = 100 mA, tp = 20 ms
Ie
40
mW/sr
10
μA
IF = 1 A, tp = 100 μs
Ie
400
mW/sr
IF = 100 mA, tp = 20 ms
φe
40
mW
IF = 100 mA
TKφe
- 0.35
%/K
ϕ
± 22
deg
nm
Angle of half intensity
Peak wavelength
IF = 100 mA
λp
890
Spectral bandwidth
IF = 100 mA
Δλ
44
nm
Temperature coefficient of λp
IF = 100 mA
TKλp
0.25
nm/K
Rise time
IF = 100 mA
tr
30
ns
Fall time
IF = 100 mA
tf
30
ns
IDC = 70 mA, IAC = 30 mA pp
fc
12
MHz
Method: 63 % encircled energy
d
1.9
mm
Cut-off frequency
Virtual source diameter
Rev. 1.2, 24-Aug-11
Document Number: 81276
2
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TSHF4410
www.vishay.com
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
1.25
Φe,rel - Relative Radiant Power
Tamb < 50 °C
tp/T = 0.01
1000
IF - Forward Current (mA)
0.02
0.05
0.1
0.2
0.5
100
0.01
0.1
1
10
0.75
0.5
0.25
0
800
100
Fig. 2 - Pulse Forward Current vs. Pulse Duration
Fig. 5 - Relative Radiant Power vs. Wavelength
0°
1000
10°
20°
100
tp = 100 µs
tp/T = 0.001
10
40°
1.0
0.9
50°
0.8
60°
1
0
18873
1
3
2
VF - Forward Voltage (V)
4
Fig. 3 - Forward Current vs. Forward Voltage
70°
0.7
94 8883
ϕ - Angular Displacement
30°
Ie rel - Relative Radiant Intensity
IF - Forward Current (mA)
1000
900
λ - Wavelength (nm)
20016
tp - Pulse Duration (ms)
16031
1.0
80°
0.6
0.4
0.2
0
Fig. 6 - Relative Radiant Intensity vs. Angular Displacement
Ie - Radiant Intensity (mW/sr)
1000
100
10
1
0.1
100
16961
101
102
103
104
IF - Forward Current (mA)
Fig. 4 - Radiant Intensity vs. Forward Current
Rev. 1.2, 24-Aug-11
Document Number: 81276
3
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TSHF4410
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
C
± 0.3
5.8
Area not plane
Ø 2.9
± 0.15
1.5
0.6
± 0.25
± 0.5
30.3
< 0.6
± 0.1
3.5
R 1.4 (sphere)
(2.5)
± 0.3
4.5
Ø 3.2
± 0.15
A
2.54 nom.
0.4
± 0.15
+ 0.15
- 0.05
technical drawings
according to DIN
specifications
Drawing-No.: 6.544-5255.01-4
Issue: 7; 25.09.08
95 10913
Rev. 1.2, 24-Aug-11
Document Number: 81276
4
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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Revision: 02-Oct-12
1
Document Number: 91000