TSHF4410 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero FEATURES • Package type: leaded • Package form: T-1 • Dimensions (in mm): ∅ 3 • Peak wavelength: λp = 890 nm • High reliability • High radiant power • High radiant intensity • Angle of half intensity: ϕ = ± 22° 94 8636 • Low forward voltage • Suitable for high pulse current operation • High modulation bandwidth: fc = 12 MHz • Good spectral matching with Si photodetectors DESCRIPTION • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC TSHF4410 is an infrared, 890 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. Note ** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902 APPLICATIONS • Infrared high speed remote control and free air data transmission systems with high modulation frequencies or high data transmission rate requirements • Transmission systems according to IrDA requirements and for carrier frequency based systems (e.g. ASK/FSK coded, 450 kHz or 1.3 MHz) • Smoke-automatic fire detectors PRODUCT SUMMARY COMPONENT TSHF4410 Ie (mW/sr) ϕ (deg) λp (nm) tr (ns) 40 ± 22 890 30 Note • Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE TSHF4410 PACKAGING REMARKS PACKAGE FORM Bulk MOQ: 5000 pcs, 5000 pcs/bulk T-1 Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) SYMBOL VALUE Reverse voltage VR 5 V Forward current IF 100 mA PARAMETER TEST CONDITION UNIT Peak forward current tp/T = 0.5, tp = 100 μs IFM 200 mA Surge forward current tp = 100 μs IFSM 1.5 A Rev. 1.2, 24-Aug-11 Document Number: 81276 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSHF4410 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) SYMBOL VALUE UNIT Power dissipation TEST CONDITION PV 180 mW Junction temperature Tj 100 °C Operating temperature range Tamb - 40 to + 85 °C Storage temperature range Tstg - 40 to + 100 °C PARAMETER Soldering temperature t ≤ 5 s, 2 mm from case Tsd 260 °C Thermal resistance junction/ambient J-STD-051, leads 7 mm, soldered on PCB RthJA 300 K/W 200 120 160 IF - Forward Current (mA) PV - Power Dissipation (mW) 180 140 120 RthJA = 300 K/W 100 80 60 40 100 80 RthJA = 300 K/W 60 40 20 20 0 0 0 10 21311 20 30 40 50 60 70 80 90 100 0 Tamb - Ambient Temperature (°C) 21312 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) Fig. 1 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Forward voltage Temperature coefficient of VF Reverse current Junction capacitance Radiant intensity Radiant power Temperature coefficient of φe TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT V IF = 100 mA, tp = 20 ms VF 1.5 1.8 IF = 1 A, tp = 100 μs VF 2.4 3.0 IF = 1 mA TKVF - 1.8 V mV/K VR = 5 V IR VR = 0 V, f = 1 MHz, E = 0 Cj 125 pF IF = 100 mA, tp = 20 ms Ie 40 mW/sr 10 μA IF = 1 A, tp = 100 μs Ie 400 mW/sr IF = 100 mA, tp = 20 ms φe 40 mW IF = 100 mA TKφe - 0.35 %/K ϕ ± 22 deg nm Angle of half intensity Peak wavelength IF = 100 mA λp 890 Spectral bandwidth IF = 100 mA Δλ 44 nm Temperature coefficient of λp IF = 100 mA TKλp 0.25 nm/K Rise time IF = 100 mA tr 30 ns Fall time IF = 100 mA tf 30 ns IDC = 70 mA, IAC = 30 mA pp fc 12 MHz Method: 63 % encircled energy d 1.9 mm Cut-off frequency Virtual source diameter Rev. 1.2, 24-Aug-11 Document Number: 81276 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSHF4410 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 1.25 Φe,rel - Relative Radiant Power Tamb < 50 °C tp/T = 0.01 1000 IF - Forward Current (mA) 0.02 0.05 0.1 0.2 0.5 100 0.01 0.1 1 10 0.75 0.5 0.25 0 800 100 Fig. 2 - Pulse Forward Current vs. Pulse Duration Fig. 5 - Relative Radiant Power vs. Wavelength 0° 1000 10° 20° 100 tp = 100 µs tp/T = 0.001 10 40° 1.0 0.9 50° 0.8 60° 1 0 18873 1 3 2 VF - Forward Voltage (V) 4 Fig. 3 - Forward Current vs. Forward Voltage 70° 0.7 94 8883 ϕ - Angular Displacement 30° Ie rel - Relative Radiant Intensity IF - Forward Current (mA) 1000 900 λ - Wavelength (nm) 20016 tp - Pulse Duration (ms) 16031 1.0 80° 0.6 0.4 0.2 0 Fig. 6 - Relative Radiant Intensity vs. Angular Displacement Ie - Radiant Intensity (mW/sr) 1000 100 10 1 0.1 100 16961 101 102 103 104 IF - Forward Current (mA) Fig. 4 - Radiant Intensity vs. Forward Current Rev. 1.2, 24-Aug-11 Document Number: 81276 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSHF4410 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters C ± 0.3 5.8 Area not plane Ø 2.9 ± 0.15 1.5 0.6 ± 0.25 ± 0.5 30.3 < 0.6 ± 0.1 3.5 R 1.4 (sphere) (2.5) ± 0.3 4.5 Ø 3.2 ± 0.15 A 2.54 nom. 0.4 ± 0.15 + 0.15 - 0.05 technical drawings according to DIN specifications Drawing-No.: 6.544-5255.01-4 Issue: 7; 25.09.08 95 10913 Rev. 1.2, 24-Aug-11 Document Number: 81276 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000