Datasheet

SS3P5, SS3P6
www.vishay.com
Vishay General Semiconductor
High Current Density Surface Mount Schottky Rectifier
FEATURES
• Very low profile - typical height of 1.0 mm
Available
• Ideal for automated placement
eSMP ® Series
• Low forward voltage drop, low power losses
• High efficiency
• Low thermal resistance
• Meets MSL level 1, per
LF maximum peak of 260 °C
J-STD-020,
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DO-220AA (SMP)
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
PRIMARY CHARACTERISTICS
IF(AV)
3.0 A
VRRM
50 V, 60 V
IFSM
45 A
EAS
11.25 mJ
VF at IF = 3.0 A
0.61 V
TJ max.
150 °C
Package
DO-220AA (SMP)
Diode variations
Single die
MECHANICAL DATA
Case: DO-220AA (SMP)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant, and
automotive grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
SS3P5
SS3P6
35
36
UNIT
Maximum repetitive peak reverse voltage
VRRM
Maximum average forward rectified current (fig. 1)
IF(AV)
3.0
A
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load
IFSM
45
A
Non-repetitive avalanche energy at TJ = 25 °C, IAS = 1.5 A, L = 10 mH
Voltage rate of change (rated VR)
Operating junction and storage temperature range
Revision: 19-Nov-13
50
60
V
EAS
11.25
mJ
dV/dt
10 000
V/μs
TJ, TSTG
- 55 to + 150
°C
Document Number: 88997
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SS3P5, SS3P6
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Maximum instantaneous forward voltage
IF = 3 A
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
Maximum reverse current at rated VR
TJ = 125 °C
Typical junction capacitance
SYMBOL
VF (1)
TYP.
MAX.
0.71
0.78
0.61
0.65
-
100
μA
2.0
10
mA
IR (2)
4.0 V, 1 MHz
CJ
UNIT
V
80
pF
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width  40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise specified)
PARAMETER
Typical thermal resistance (1)
SYMBOL
SS3P4
RJA (1)
115
RJL (1)
15
RJC (1)
20
UNIT
°C/W
Note
(1) Thermal resistance from junction to ambient and junction to lead mounted on PCB with 5.0 mm x 5.0 mm copper pad areas. R
JL is measured 
at the terminal of cathode band. RJC is measured at the top center of the body
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
SS3P6-M3/84A
0.024
84A
3000
7" diameter plastic tape and reel
SS3P6-M3/85A
0.024
85A
10 000
13" diameter plastic tape and reel
SS3P6HM3/84A (1)
0.024
84A
3000
7" diameter plastic tape and reel
SS3P6HM3/85A (1)
0.024
85A
10 000
13" diameter plastic tape and reel
Note
(1) Automotive grade

RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise specified)
2.5
3.0
D = 0.3
2.5
Average Power Loss (W)
Average Forward Current (A)
Resistive or Inductive Load
2.0
1.5
1.0
TL Measured
at the Cathode Band Terminal
0.5
D = 0.5
D = 0.8
D = 0.2
2.0
D = 0.1
D = 1.0
1.5
1.0
T
0.5
D = tp/T
tp
0
0
80
90
100
110
120
130
140
Lead Temperature (°C)
Fig. 1 - Forward Current Derating Curve
Revision: 19-Nov-13
150
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics
Document Number: 88997
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SS3P5, SS3P6
www.vishay.com
Vishay General Semiconductor
1000
Transient Thermal Impedance (°C/W)
Average Forward Current (A)
50
40
30
20
10
10
10
1
0.01
0
1
100
100
0.1
10
1
100
Number of Cycles at 60 Hz
t - Pulse Duration (s)
Fig. 3 - Maximum Non-Repetitive Peak Forward Surge Current
Fig. 6 - Typical Transient Thermal Impedance
10 000
Instantaneous Reverse Current (µA)
Instantaneous Forward Current (A)
100
TJ = 150 °C
TJ = 125 °C
10
1
TJ = 25 °C
0.1
TJ = 150 °C
1000
TJ = 125 °C
100
10
TJ = 25 °C
1
0.1
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Instantaneous Forward Voltage (V)
10
20
30
40
50
60
70
80
90
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Instantaneous Forward Characteristics
Fig. 7 - Typical Reverse Leakage Characteristics
Junction Capacitance (pF)
1000
100
10
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
Revision: 19-Nov-13
Document Number: 88997
3
For technical questions within your region: [email protected]om, [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SS3P5, SS3P6
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-220AA (SMP)
0.012 (0.30) REF.
Cathode Band
0.053 (1.35)
0.041 (1.05)
0.086 (2.18)
0.074 (1.88)
0.142 (3.61)
0.126 (3.19)
0.036 (0.91)
0.024 (0.61)
0.103 (2.60)
0.087 (2.20)
0.032 (0.80)
0.016 (0.40)
0.158 (4.00)
0.146 (3.70)
0.105
(2.67)
0.013 (0.35)
0.004 (0.10)
0.045 (1.15)
0.033 (0.85)
0.012 (0.30) 0.018 (0.45)
0.000 (0.00) 0.006 (0.15)
Revision: 19-Nov-13
0.025 0.030
(0.635) (0.762)
0.100
(2.54)
0.050
(1.27)
Document Number: 88997
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000