SUP85N10-10P Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 100 0.010 at VGS = 10 V 85d 77 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC TO-220AB APPLICATIONS • Industrial D G G D S Top View S Ordering Information: SUP85N10-10P-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 70 °C ID IDM Pulsed Drain Current Avalanche Current Single Avalanche Energya L = 0.1 mH TC = 25 °C Maximum Power Dissipationa TA = 25 Operating Junction and Storage Temperature Range °Cc Unit V 85d 83 240 IAS 60 EAS 180 A mJ b PD 227 3.75 W TJ, Tstg - 55 to 150 °C Symbol Limit Unit RthJA 40 RthJC 0.55 THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Mount) c Junction-to-Case (Drain) °C/W Notes: a. Duty cycle ≤ 1 %. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR-4 material). d. Package limited. Document Number: 64833 S11-2239-Rev. B, 14-Nov-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUP85N10-10P Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VDS = 0 V, ID = 250 µA 100 VGS(th) VDS = VGS, ID = 250 µA 2.5 IGSS VDS = 0 V, VGS = ± 20 V Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea IDSS 4.5 ± 250 VDS = 100 V, VGS = 0 V 1 VDS = 100 V, VGS = 0 V, TJ = 125 °C 50 VDS = 100 V, VGS = 0 V, TJ = 150 °C 250 VDS ≥ 10 V, VGS = 10 V ID(on) RDS(on) 120 nA µA A VGS = 10 V, ID = 20 A 0.0080 0.0100 VGS = 10 V, ID = 20 A, TJ = 125 °C 0.0146 0.0185 VDS = 15 V, ID = 20 A 70 gfs V Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs c Gate-Drain Charge 77 VDS = 50 V, VGS = 10 V, ID = 75 A Rise Timec f = 1 MHz td(on) VDD = 50 V, RL = 0.67 Ω ID ≅ 75 A, VGEN = 10 V, Rg = 1 Ω tr c Fall Timec 120 nC 25 20 Rg Turn-On Delay Timec pF 315 150 Qgd Gate Resistance Turn-Off Delay Time 4660 VGS = 0 V, VDS = 50 V, f = 1 MHz td(off) tf 0.25 1.2 2.4 15 25 12 20 25 40 8 15 Ω ns b Drain-Source Body Diode Characteristics TC = 25 °C IS 85 Pulsed Current ISM 240 Forward Voltagea VSD Continuous Current Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = 5 A, VGS = 0 V 0.8 1.5 V 74 115 ns IF = 5 A, dI/dt = 100 A/µs 6.7 10 A 250 400 nC trr IRM(REC) Qrr A Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 64833 S11-2239-Rev. B, 14-Nov-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUP85N10-10P Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 120 VGS = 10 V thru 7 V 8 I D - Drain Current (A) I D - Drain Current (A) 100 80 60 VGS = 6 V 40 6 4 TC = 25 °C 2 20 TC = 125 °C TC = - 55 °C 0 0 0 1 2 3 4 0 5 2 Output Characteristics 6 8 10 Transfer Characteristics 0.020 150 120 RDS(on) - On-Resistance (Ω) g fs - Transconductance (S) 4 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) TC = - 55 °C 90 TC = 25 °C TC = 125 °C 60 0.015 0.010 VGS = 10 V 0.005 30 0.000 0 0 10 20 30 40 0 50 40 60 80 100 ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 120 10 6000 ID = 16 A VGS - Gate-to-Source Voltage (V) Ciss 5000 C - Capacitance (pF) 20 ID - Drain Current (A) 4000 3000 2000 1000 Coss Crss 0 0 8 VDS = 50 V 6 VDS = 25 V VDS = 75 V 4 2 0 20 40 60 80 VDS - Drain-to-Source Voltage (V) Capacitance Document Number: 64833 S11-2239-Rev. B, 14-Nov-11 100 0 20 40 60 80 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUP85N10-10P Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 1.7 VGS = 10 V 1.3 0.9 0.5 - 50 R DS(on) - On-Resistance (Ω) R DS(on) - On-Resistance (Ω) ID = 20 A - 25 0 25 50 75 100 125 TJ = 150 °C 10 TJ = 25 °C 1 TJ = - 50 °C 0.1 0.01 0.001 0.0 150 0.2 0.4 0.6 0.8 1.0 1.2 TJ - Junction Temperature (°C) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 0.05 0.8 0.04 0.3 VGS(th) Variance (V) R DS(on) - On-Resistance (Normalized) 2.1 0.03 0.02 TJ = 125 °C - 0.2 ID = 1 mA - 0.7 ID = 250 µA 0.01 - 1.2 TJ = 25 °C 0.00 3 4 5 6 7 8 VGS - Gate-to-Source Voltage (V) 9 - 1.7 - 50 10 - 25 0 25 50 75 100 125 150 TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Threshold Voltage 130 100 ID = 1 mA 118 I DAV (A) BVDSS (V) 124 112 TJ = 25 °C TJ = 150 °C 10 106 100 - 50 - 25 0 25 50 75 100 125 150 1 10-5 10-4 10-3 10-2 10-1 1 TJ - Junction Temperature (°C) t AV (s) Drain Source Breakdown Voltage vs. Junction Temperature Single Pulse Avalanche Current Capability vs. Time www.vishay.com 4 Document Number: 64833 S11-2239-Rev. B, 14-Nov-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUP85N10-10P Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1000 Limited by RDS(on)* 100 µs I D - Drain Current (A) 100 1 ms 10 10 ms 100 ms, DC 1 0.1 TC = 25 °C Single Pulse 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 120 300 100 I D - Drain Current (A) Power (W) 240 180 120 60 80 Package Limited 60 40 20 0 0 0 25 50 75 100 125 TC - Case Temperature (°C) Power Derating, Junction-to-Case 150 0 25 50 75 100 125 TC - Case Temperature (°C) 150 Current Derating* * The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 64833 S11-2239-Rev. B, 14-Nov-11 www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUP85N10-10P Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.1 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 Square Wave Pulse Duration (s) 10 -1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?64833. www.vishay.com 6 Document Number: 64833 S11-2239-Rev. B, 14-Nov-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-220AB MILLIMETERS A E F D H(1) Q ØP 3 2 L(1) 1 M* L b(1) INCHES DIM. MIN. MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 D 14.85 15.49 0.585 0.610 D2 12.19 12.70 0.480 0.500 E 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.09 6.48 0.240 0.255 0.115 J(1) 2.41 2.92 0.095 L 13.35 14.02 0.526 0.552 L(1) 3.32 3.82 0.131 0.150 ØP 3.54 3.94 0.139 0.155 Q 2.60 3.00 0.102 0.118 ECN: T14-0413-Rev. P, 16-Jun-14 DWG: 5471 Note * M = 1.32 mm to 1.62 mm (dimension including protrusion) Heatsink hole for HVM C b e J(1) e(1) D2 Document Number: 71195 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revison: 16-Jun-14 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000