DG508B, DG509B Datasheet

DG508B, DG509B
www.vishay.com
Vishay Siliconix
Precision 8-Channel / Dual 4-Channel CMOS Analog Multiplexers
DESCRIPTION
FEATURES
The DG508B is an 8-channel single-ended analog
multiplexer designed to connect one of eight inputs to a
common output as determined by a 3-bit binary address
(A0, A1, A2). The DG509B is a dual 4-channel differential
analog multiplexer designed to connect one of four
differential inputs to a common dual output as determined
by its 2-bit binary address (A0, A1). Break-before-make
switching action protects against momentary crosstalk
between adjacent channels.
• Operate with single or dual power supply
An on channel conducts current equally well in both
directions. In the off state each channel blocks voltages up
to the power supply rails. An enable (EN) function allows the
user to reset the multiplexer / demultiplexer to all switches
off for stacking several devices. All control inputs,
addresses (AX) and enable (EN) are TTL compatible over the
full specified operating temperature range.
The DG508B and DG509B are fabricated on an enhanced
SG-II CMOS process that achieves improved performance
on: reduced charge injection, lower device leakage, and
minimized parasitic capacitance.
• V+ to V- analog signal swing range
• 44 V power supply maximum rating
• Extended operate temperature range:
-40 °C to +125 °C
• Low leakage typically < 3 pA
• Low charge injection - QINJ = 2 pC
• Low power - ISUPPLY: 10 μA
• TTL compatible logic
• > 250 mA latch-up current per JESD78
• Available in SOIC16, TSSOP16, PDIP, and miniQFN16
packages
• Superior alternative to:
- ADG508A, DG508A, HI-508
- ADG509A, DG509A, HI-509
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
As the DG508, DG509 has a long history in the industry with
many suppliers offering copies - and in some cases
improved variations - with the best in class improvements,
the Vishay Siliconix new version of the DG508B, DG509B
are the superior alternatives to what is currently available.
BENEFITS
Applications for the DG508B, DG509B include high speed
and high precision data acquisition, audio signal switching
and routing, ATE systems, and avionics. High performance
and low power dissipation make them ideal for battery
operated and remote instrumentation applications.
• Reduced power consumption
The DG508B and DG509B have the absolute maximum
voltage rating extended to 44 V. Additionally, single supply
operation is also allowed. An epitaxial layer prevents
latch-up.
The DG508B and DG509B are both available in 16-lead
SOIC, TSSOP, PDIP, and miniQFN (1.8 mm x 2.6 mm)
package options with extended temperature range of -40 °C
to +125 °C.
• Reduced switching errors
• Reduced glitching
• Improved data throughput
• Increased ruggedness
• Wide supply ranges (± 5 V to ± 20 V)
APPLICATIONS
• Data acquisition systems
• Audio and video signal routing
• ATE systems
• Medical instrumentation
For more information, refer to Vishay Siliconix DG508B,
DG509B evaluation board note.
S14-2382-Rev. E, 15-Dec-14
Document Number: 64821
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG508B, DG509B
www.vishay.com
Vishay Siliconix
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG509B
Dual-In-Line
SOIC and TSSOP
DG508B
Dual-In-Line
SOIC and TSSOP
16
A1
A0
1
16
A1
15
A2
EN
2
15
GND
3
14
GND
V-
3
14
V+
S1
4
13
V+
S1a
4
13
S1b
S2
5
12
S5
S2a
5
12
S2b
S3
6
11
S6
S3a
6
11
S3b
S4
7
10
S7
S4a
7
10
S4b
D
8
9
S8
Da
8
9
Db
A0
1
EN
2
V-
Decoders/Drivers
Decoders/Drivers
Top view
Top view
DG508B
miniQFN-16L
GND
12
V+
11
S5
10
DG509B
miniQFN-16L
A2 13
A1 14
Decoders/
Drivers 6XX
A0 15
V+
12
S6
9
EN 16
1
2
3
4
V-
S1
S2
S3
8 S7
GND 13
7 S8
A1 14
6 D
A0 15
5 S4
EN 16
Pin 1: LONG LEAD
S1B
11
S3B
9
S2B
10
8 S4B
7 DB
Decoders/
Drivers 7XX
6 DA
5 S4A
1
2
3
4
V-
S1A
S2A
S3A
Pin 1: LONG LEAD
Top View
Device Marking: 7XX
Traceability Code:
7 is DG509BEN
XX = Date/Lot
Top View
Device Marking: 6XX
Traceability Code:
6 is DG508BEN
XX = Date/Lot
TRUTH TABLES AND ORDERING INFORMATION
TRUTH TABLE (DG508B)
TRUTH TABLE (DG509B)
A2
A1
A0
EN
ON SWITCH
A1
A0
EN
ON SWITCH
X
X
X
0
None
X
X
0
None
0
0
0
1
1
0
0
1
1
0
0
1
1
2
0
1
1
2
0
1
0
1
3
1
0
1
3
0
1
1
1
4
1
1
1
4
1
0
0
1
5
1
0
1
1
6
1
1
0
1
7
1
1
1
1
8
S14-2382-Rev. E, 15-Dec-14
Logic “0” = VIL ≤ 0.8 V
Logic “1” = VIH ≥ 2 V
X = Do not care
Document Number: 64821
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG508B, DG509B
www.vishay.com
Vishay Siliconix
ORDERING INFORMATION (DG508B)
TEMP. RANGE
-40 °C to +125 °C a
PACKAGE
ORDERING INFORMATION (DG509B)
PART NUMBER
TEMP. RANGE
PACKAGE
PART NUMBER
16-Pin SOIC
DG508BEY-T1-E3
16-Pin SOIC
DG509BEY-T1-E3
16-Pin TSSOP
DG508BEQ-T1-E3
16-Pin TSSOP
DG509BEQ-T1-E3
16-Pin PDIP
DG508BEJ-E3
16-Pin PDIP
DG509BEJ-E3
16-Pin MiniQFN
DG508BEN-T1-GE4
16-Pin MiniQFN
DG509BEN-T1-GE4
-40 °C to +125 °C a
Note
a. -40 °C to +85 °C datasheet limits apply.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Voltages Referenced to V-
LIMIT
V+
44
GND
25
Digital Inputs a, VS, VD
(V-) - 2 to (V+) + 2
or 20 mA, whichever occurs first
Current (Any terminal)
30
Peak Current, S or D (Pulsed at 1 ms, 10 % duty cycle max.)
100
Storage Temperature
(EY, EQ, EJ, EN suffix)
16-Pin Narrow SOIC
Power Dissipation (Packages) b
Thermal Resistance (θJA) b
c
16-Pin TSSOP d
16-Pin PDIP
e
-65 to +150
450
16-Pin miniQFN f
525
16-Pin Narrow SOIC c
125
16-Pin TSSOP
16-Pin PDIP
e
16-Pin miniQFN f
V
mA
°C
600
510
d
UNIT
178
159.6
mW
°C/W
152
Notes
a. Signals on SX, DX or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads soldered or welded to PC board.
c. Derate 8 mW/°C above 70 °C.
d. Derate 5.6 mW/°C above 70 °C.
e. Derate 6.3 mW/°C above 70 °C.
f. Derate 6.6 mW/°C above 70 °C.
S14-2382-Rev. E, 15-Dec-14
Document Number: 64821
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG508B, DG509B
www.vishay.com
Vishay Siliconix
SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
UNLESS OTHERWISE
SPECIFIED
V+ = 15 V, V- = -15 V (± 10 %)
VAX, VEN = 2 V, 0.8 V a
TEMP. b TYP. c
-40 °C to +125 °C
-40 °C to +85 °C
MIN. d
MAX. d
MIN. d
MAX. d
UNIT
Analog Switch
Analog Signal Range e
Drain-Source
On-Resistance
RDS(on) Matching
Source Off Leakage
Current
Drain Off Leakage Current
VANALOG
RDS(on)
VD = ± 10 V, IS = -1 mA
ΔRDS(on)
VD = ± 10 V
IS(off)
ID(off)
VD = ± 10 V
VS = −
+ 10 V
VEN = 0 V
DG508B
DG509B
Drain On Leakage Current
ID(on)
− 10 V
VS = VD = +
sequence each
switch on
DG508B
DG509B
Full
-
-15
15
-15
15
Room
180
-
380
-
380
Full
-
-
480
-
450
Room
10
-
-
-
-
Room
-
-1
1
-1
1
Full
-
-50
50
-50
50
Room
-
-1
1
-1
1
Full
-
-100
100
-100
100
Room
-
-1
1
-1
1
Full
-
-50
50
-50
50
Room
-
-1
1
-1
1
Full
-
-100
100
-100
100
Room
-
-1
1
-1
1
Full
-
-50
50
-50
50
V
Ω
nA
Digital Control
Logic High Input Voltage
VINH
Full
-
2
-
2
-
Logic Low Input Voltage
VINL
Full
-
-
0.8
-
0.8
Logic High Input Current
IIH
VAX, VEN = 2 V
Full
-
-1
1
-1
1
Logic Low Input Current
IIL
VAX, VEN = 0.8 V
Full
-
-1
1
-1
1
Logic Input Capacitance e
CIN
f = 1 MHz
Room
4
-
-
-
-
145
-
300
-
300
tTRANS
VS1 = +10 V/-10 V,
VS8 = -10 V/+10 V,
RL = 1 MΩ, CL = 35 pF
Room
Transition Time
Full
-
-
400
-
400
Break-Before-Make
Interval
tOPEN
VS1 = VS8 = 5 V, CL = 35 pF,
RL = 1 kΩ
Room
37
15
-
15
-
Full
-
1
-
1
-
Enable Turn-On Time
tON(EN)
Room
100
-
250
-
250
340
V
μA
pF
Dynamic Characteristics
Enable Turn-Off Time
tOFF(EN)
Charge Injection e
QINJ
Off Isolation e
OIRR
Crosstalk e
XTALK
VS1 = 5 V, VS2 to VS8 = 0 V,
RL = 1 kΩ, CL = 35 pF
CL = 1 nF, RGEN = 0 W, VGEN = 0 V
CL = 5 pF, RL = 50 Ω, f = 1 MHz
Full
-
-
340
-
Room
90
-
240
-
240
Full
-
-
300
-
300
Full
2
-
-
-
-
Room
-81
-
-
-
-
Room
-88
-
-
-
-
ns
pC
dB
BW
RL = 50 Ω
Room
250
-
-
-
-
MHz
Total Harmonic
Distortion e
THD
RL = 10 kΩ, 5 Vrms
f = 20 Hz to 20 kHz
Room
0.04
-
-
-
-
%
Source Off Capacitance e
CS(off)
-3 dB Bandwidth e
Drain Off Capacitance e
CD(off)
Drain On Capacitance e
CD(on)
f = 1 MHz
Room
3
-
-
-
-
DG508B
Room
13
-
-
-
-
DG509B
Room
8
-
-
-
-
DG508B
Room
18
-
-
-
-
DG509B
Room
11
-
-
-
-
Room
0.01
-
0.2
-
0.2
Full
-
-
0.3
-
0.3
Full
0.06
-10
-
-10
-
pF
Power Supply
Positive Supply Current
I+
Negative Supply Current
I-
S14-2382-Rev. E, 15-Dec-14
VAX, VEN = 0.8 V or 2.4 V
mA
μA
Document Number: 64821
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG508B, DG509B
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (Single Supply 12 V)
PARAMETER
SYMBOL
TEST CONDITIONS
UNLESS OTHERWISE
SPECIFIED
V+ = 12 V, V- = 0 V (± 10 %)
VAX, VEN = 2 V, 0.8 V a
-40 °C to +125 °C -40 °C to +85 °C
TEMP. b
TYP. c
MIN. d
MAX. d
MIN. d MAX. d
UNIT
Analog Switch
Analog Signal Range e
On-Resistance
RDS(on) Matching
VANALOG
RDS(on)
VD = 10 V/0 V, IS = 1 mA
ΔRDS(on)
IS(off)
Switch Off Leakage
Current
ID(off)
V+ = 12 V, V- = 0 V
VD = 0 V/10 V,
VS = 10 V/0 V
ID(off)
DG508B
DG509B
DG508B
Channel On Leakage
Current
ID(on)
V+ = 12 V, V- = 0 V
VS = VD = 0 V/10 V
DG509B
Full
-
0
12
0
12
Room
265
-
500
-
500
Full
-
-
650
-
600
Room
10
-
-
-
-
Room
-
-1
1
-1
1
50
Full
-
-50
-50
-50
Room
-
-1
1
-1
1
Full
-
-100
100
-100
100
Room
-
-1
1
-1
1
Full
-
-50
50
-50
50
Room
-
-1
1
-1
1
Full
-
-100
100
-100
100
Room
-
-1
1
-1
1
Full
-
-50
50
-50
50
V
Ω
nA
nA
Digital Control
Logic High Input Voltage
VINH
Full
-
2
-
2
-
Logic Low Input Voltage
VINL
Full
-
-
0.8
-
0.8
Logic High Input Current
IIH
VAX, VEN = 2 V
Full
-
-1
1
-1
1
Logic Low Input Current
IIL
VAX, VEN = 0.8 V
Full
-
-1
1
-1
1
Logic Input Capacitance e
CIN
f = 1 MHz
Room
4
-
-
-
-
Transition Time
tTRANS
VS1 = 10 V/0 V, VS8 = 0 V/10 V,
RL = 1 MΩ, CL = 35 pF
Room
165
-
400
-
400
Full
-
-
550
-
500
Break-Before-Make
Interval
tOPEN
VS1 = VS8 = 5 V, CL = 35 pF,
RL = 1 kΩ
Room
37
15
-
15
-
V
μA
pF
Dynamic Characteristics
Enable Turn-On Time
tON(EN)
VS1 = 5 V, VS2 to VS8 = 0 V,
RL = 1 kΩ, CL = 35 pF
Enable Turn-Off Time
tOFF(EN)
Full
-
1
-
1
-
Room
125
-
300
-
300
Full
-
-
550
-
425
Room
75
-
250
-
250
Full
-
-
350
-
300
ns
QINJ
CL = 1 nF, RGEN = 0 Ω, VGEN = 0 V
Full
2.5
-
-
-
-
OIRR
CL = 5 pF, RL = 50 Ω
f = 1 MHz
Room
-80
-
-
-
-
XTALK
Room
-88
-
-
-
-
-3 dB Bandwidth e
BW
RL = 50 Ω
Room
200
-
-
-
-
MHz
Total Harmonic Distortion e
THD
RL = 10 kΩ, 5 VRMS,
f = 20 Hz to 20 kHz
Room
0.26
-
-
-
-
%
Source Off Capacitance e
CS(off)
2
-
-
-
-
Drain Off Capacitance e
CD(off)
13
-
-
-
-
8
-
-
-
-
DG508B
17
-
-
-
-
DG509B
12
-
-
-
-
Charge Injection e
Off
Isolation e
Crosstalk e
Channel On Capacitance e
S14-2382-Rev. E, 15-Dec-14
CD(on)
DG508B
f = 1 MHz
DG509B
Room
pC
dB
pF
Document Number: 64821
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG508B, DG509B
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (Single Supply 12 V)
PARAMETER
SYMBOL
TEST CONDITIONS
UNLESS OTHERWISE
SPECIFIED
V+ = 12 V, V- = 0 V (± 10 %)
VAX, VEN = 2 V, 0.8 V a
I+
VAX, VEN = 0.8 V or 2.4 V
-40 °C to +125 °C -40 °C to +85 °C
TEMP. b
TYP. c
Room
Full
MIN. d
MAX. d
MIN. d MAX. d
0.01
-
0.2
-
0.2
-
-
0.3
-
0.3
UNIT
Power Supply
Positive Supply Current
mA
Notes
a. VAX, VEN = input voltage perform proper function.
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet.
e. Guaranteed by design, not subject to production test.
f. ΔRDS(on) = RDS(on) max. - RDS(on) min.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SCHEMATIC DIAGRAM (Typical Channel)
V+
GND
VREF
D
A0
AX
Level
Shift
Decode/
Drive
V+
V-
S1
EN
Sn
V-
Fig. 1
S14-2382-Rev. E, 15-Dec-14
Document Number: 64821
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG508B, DG509B
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
400
400
T = 25 °C
IS = 1 mA
375
V = + 10.8 V
325
RON - On-Resistance (Ω)
RON - On-Resistance (Ω)
350
300
V = + 12.0 V
375
250
V = + 20.0 V
225
200
V = + 36.0 V
175
T = 25 °C
IS = 1 mA
350
150
V = ± 5.0 V
V = ± 10.8 V
300
V = ± 13.5 V
V = ± 15 V
V = ± 20 V
250
200
150
100
125
50
- 20 - 16 - 12
100
0
4
8
12
16
20
24
28
32
36
-4
0
4
8
12
16
20
VD - Analog Voltage (V)
On-Resistance vs. VD and Single Supply Voltage
On-Resistance vs. VD and Dual Supply Voltage
500
550
V = + 10.8 V
IS = 1 mA
+ 125 °C
+ 85 °C
+ 25 °C
- 40 °C
450
450
+ 125 °C
RON - On-Resistance (Ω)
500
RON - On-Resistance (Ω)
-8
VD - Analog Voltage (V)
400
350
300
250
200
400
350
+ 85 °C
300
+ 25 °C
250
200
- 40 °C
V = + 12 V
IS = 1 mA
150
150
100
100
0
1
2
3
4
5
6
7
8
9
0
10 11 12
1
2
3
4
5
6
7
8
9
10 11 12
V - Analog Voltage (V)
V - Analog Voltage (V)
On-Resistance vs. Analog Voltage and Temperature
On-Resistance vs. Analog Voltage and Temperature
300
400
V = + 36 V
IS = 1 mA
V = + 20 V
IS = 1 mA
350
RON - On-Resistance (Ω)
RON - On-Resistance (Ω)
250
300
+ 125 °C
250
+ 85 °C
200
+ 25 °C
150
- 40 °C
200
+ 125 °C
150
+ 85 °C
+ 25 °C
100
100
- 40 °C
50
50
0
2
4
6
8
10
12
14
16
18
20
0
4
8
12
16
20
24
28
32
36
V - Analog Voltage (V)
V - Analog Voltage (V)
On-Resistance vs. Analog Voltage and Temperature
On-Resistance vs. Analog Voltage and Temperature
S14-2382-Rev. E, 15-Dec-14
Document Number: 64821
7
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG508B, DG509B
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
650
400
V=±5V
IS = 1 mA
600
500
RON - On-Resistance (Ω)
550
RON - On-Resistance (Ω)
V = ± 10.8 V
IS = 1 mA
350
+ 125 °C
450
400
350
+ 85 °C
300
+ 25 °C
250
200
300
+ 125 °C
250
200
+ 85 °C
150
+ 25 °C
100
- 40 °C
- 40 °C
150
100
-5
-4
-3
-2
-1
0
1
2
3
4
50
- 11 - 9
5
-5
-3
-1
3
5
7
9
11
On-Resistance vs. Analog Voltage and Temperature
On-Resistance vs. Analog Voltage and Temperature
350
V = ± 13.5 V
IS = 1 mA
V± = ± 15.0 V
IS = 1 mA
300
RON - On-Resistance (Ω)
300
250
+ 125 °C
200
+ 85 °C
150
+ 25 °C
100
250
+ 125 °C
200
+ 85 °C
150
+ 25 °C
100
- 40 °C
50
- 14
- 10
-6
-2
- 40 °C
2
6
10
50
- 15
14
-9
-3
3
9
15
V - Analog Voltage (V)
V - Analog Voltage (V)
On-Resistance vs. Analog Voltage and Temperature
On-Resistance vs. Analog Voltage and Temperature
1.8
350
+ 125 °C
+ 85 °C
+ 25 °C
- 40 °C
V = ± 20 V
IS = 1 mA
1.7
1.6
VT - Switching Threshold (V)
300
RON - On-Resistance ()
1
V - Analog Voltage (V)
350
RON - On-Resistance (Ω)
-7
V - Analog Voltage (V)
250
200
150
100
1.5
VIH
1.4
1.3
VIL
1.2
1.1
1.0
0.9
50
- 20 - 16 - 12
-8
-4
0
4
8
12
16
20
V - Analog Voltage (V)
On-Resistance vs. Analog Voltage and Temperature
S14-2382-Rev. E, 15-Dec-14
0.8
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20
Supply Voltage (V)
Switching Threshold vs. Supply Voltage
Document Number: 64821
8
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG508B, DG509B
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Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100 mA
10
RL = 10 k
VSignal = 5 VRMS
10 mA
I+ - Supply Current (A)
1
THD (%)
V = + 12 V
0.1
V = ± 15 V
V = ± 15.0 V
1 mA
100 µA
V = + 12.0 V
0.01
10 µA
1 µA
0
10
100
1000
Frequency (Hz)
10 000
100 000
10
100
1K
10K
100K
1M
10M
Input Switching Frequency (Hz)
Supply Current vs. Input Switching Frequency
THD vs. Frequency
1000
10 000
V = +36
V+/- = +/-15V
100
85 °C
125 °C
25 °C
I+ - Supply Current (μA)
I+ - Supply Current (μA)
1000
-40 °C
125 °C
100
85 °C
25 °C
10
-40 °C
10
0.0
6.0
12.0
18.0
24.0
30.0
1
0.0
36.0
VAX, VEN - (V)
6.0
9.0
VAX, VEN - (V)
Supply Current vs. VAX, VEN
Supply Current vs. VAX, VEN
10
- 10
V+ = 12 V
RL = 50 
- 30
- 40
OIRR
- 50
- 60
XTalk
- 70
Loss, OIRR, XTALK (dB)
Loss, OIRR, XTALK (dB)
15.0
0
Loss
- 10
- 20
- 30
Loss
V = ± 15 V
RL = 50 
- 40
OIRR
- 50
- 60
- 70
- 80
- 80
- 90
- 90
- 100
100K
12.0
10
0
- 20
3.0
1M
10M
100M 200M
Frequency (Hz)
Insertion Loss, Off-Isolation, Crosstalk vs. Frequency
S14-2382-Rev. E, 15-Dec-14
- 100
100K
XTalk
1M
10M
100M
300M
Frequency (Hz)
Insertion Loss, Off-Isolation, Crosstalk vs. Frequency
Document Number: 64821
9
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG508B, DG509B
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
12
100 mA
10
QINJ - Charge Injection (pF)
10 mA
I- - Supply Current (A)
1 mA
V = ± 15.0 V
100 µA
10 µA
V = + 12.0 V
1 µA
100 nA
8
6
4
2
0
V = + 12 V
CL = 1 nF
-2
-4
-6
-8
10 nA
V = ± 15 V
CL = 1 nF
- 10
1 nA
10
100
1K
10K
100K
1M
- 12
- 15 - 12
10M
-3
0
3
6
9
12
Supply Current vs. Input Switching Frequency
Charge Injection vs. Analog Voltage
15
8
V = ± 15.0 V
6
I D(ON)
Leakage Current (pA)
104
Leakage Current (pA)
-6
VS - Analog Voltage (V)
105
103
102
101
-9
Input Switching Frequency (Hz)
I D(OFF)
V = ± 15 V
T = 25 °C
4
ID(ON)
2
0
-2
IS(OFF)
ID(OFF)
-4
100
-6
I S(OFF)
10-1
- 60 - 40 - 20
-8
0
20
40 60
80
Temperature (ºC)
100 120 140
Leakage Current vs. Temperature
S14-2382-Rev. E, 15-Dec-14
- 15
- 10
-5
0
5
Analog Voltage (V)
10
15
Leakage Current vs. Analog Voltage
Document Number: 64821
10
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG508B, DG509B
www.vishay.com
Vishay Siliconix
TEST CIRCUITS
+ 15 V
V+
A2
S1
A1
50 
± 10 V
S2 - S7
A0
S8
DG508B
EN
± 10 V
VO
D
GND
+ 2.0 V
V-
Logic
Input
50 %
0V
35 pF
1 M
tr < 20 ns
tf < 20 ns
3V
- 15 V
VS1
90 %
Switch
Output
+ 15 V
VO
0V
V+
A1
± 10 V
S1b
A0
90 %
VS8
S1a - S4a, Da
50 
DG509B S4b
S1 ON
GND
S8 ON
VO
Db
EN
+ 2.0 V
tTRANS
tTRANS
± 10 V
V35 pF
1 M
- 15 V
Fig. 2 - Transition Time
+ 15 V
V+
S1
5V
EN
S2 - S8
A0
DG508B
A1
A2
GND
VO
D
V-
50
Logic
Input
50 %
0V
35 pF
1k
tr < 20 ns
tf < 20 ns
3V
tON(EN)
- 15 V
tOFF(EN)
0V
+ 15 V
Switch
Output
VO
V+
S1b
90 %
5V
VO
EN
A0
A1
GND
10 %
S1a - S4a, Da
S2b - S4b
DG509B
Db
V-
50
1k
VO
35 pF
- 15 V
Fig. 3 - Enable Switching Time
S14-2382-Rev. E, 15-Dec-14
Document Number: 64821
11
For technical questions, contact: an[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG508B, DG509B
www.vishay.com
Vishay Siliconix
TEST CIRCUITS
+ 15 V
+ 2.4 V
V+
EN
All S and Da
tr < 20 ns
tf < 20 ns
3V
Logic
Input
50 %
+5V
0V
A0
DG508B
DG509B
A1
A2
GND
Db, D
VO
VO
V-
80 %
Switch
Output
50 
35 pF
1 k
- 15 V
VO
tOPEN
0V
Fig. 4 - Break-Before-Make Interval
+ 15 V
Rg
V+
SX
Logic
Input
EN
OFF
ON
OFF
0V
A0
Channel
Select
3V
VO
D
A1
CL
1 nF
A2
GND
VO
Switch
Output
V-
VO is the measured voltage due to charge transfer
error Q, when the channel turns off.
- 15 V
QINJ = CL x
VO
Fig. 5 - Charge Injection
+ 15 V
+ 15 V
VIN
V+
SX
VS
Rg = 50 Ω
VS
V+
S1
Rg = 50 Ω
S8
A0
D
VO
A1
A2
GND
EN
V-
RL
50 Ω
A0
D
VO
A1
A2
GND
EN
V-
RL
50 Ω
- 15 V
Off Isolation = 20 log
VOUT
VIN
Fig. 6 - Off Isolation
S14-2382-Rev. E, 15-Dec-14
- 15 V
Insertion Loss = 20 log
VOUT
VIN
Fig. 7 - Insertion Loss
Document Number: 64821
12
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG508B, DG509B
www.vishay.com
Vishay Siliconix
TEST CIRCUITS
+ 15 V
+ 15 V
VIN
VS
V+
S1
SX
V+
S8
A0
Rg = 50 Ω
D
A2
Channel
Select
GND
EN
V-
RL
50 Ω
Crosstalk = 20 log
VOUT
S8
A1
A0
D
GND
- 15 V
Meter
A2
VO
A1
S1
EN
V-
HP4192A
Impedance
Analyzer
or Equivalent
f = 1 MHz
- 15 V
VIN
Fig. 8 - Crosstalk
Fig. 9 - Source Drain Capacitance
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?64821.
S14-2382-Rev. E, 15-Dec-14
Document Number: 64821
13
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
SOIC (NARROW):
16ĆLEAD
JEDEC Part Number: MS-012
MILLIMETERS
16
15
14
13
12
11
10
Dim
A
A1
B
C
D
E
e
H
L
Ĭ
9
E
1
2
3
4
5
6
7
8
INCHES
Min
Max
Min
Max
1.35
1.75
0.053
0.069
0.10
0.20
0.004
0.008
0.38
0.51
0.015
0.020
0.18
0.23
0.007
0.009
9.80
10.00
0.385
0.393
3.80
4.00
0.149
0.157
1.27 BSC
0.050 BSC
5.80
6.20
0.228
0.244
0.50
0.93
0.020
0.037
0_
8_
0_
8_
ECN: S-03946—Rev. F, 09-Jul-01
DWG: 5300
H
D
C
All Leads
e
Document Number: 71194
02-Jul-01
B
A1
L
Ĭ
0.101 mm
0.004 IN
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1
Package Information
Vishay Siliconix
PDIP: 16ĆLEAD
16
15
14
13
12
11
10
9
E
E1
1
2
3
4
5
6
7
8
D
S
Q1
A
A1
L
15°
MAX
C
B1
e1
Dim
A
A1
B
B1
C
D
E
E1
e1
eA
L
Q1
S
B
eA
MILLIMETERS
Min
Max
INCHES
Min
Max
3.81
5.08
0.150
0.200
0.38
1.27
0.015
0.050
0.38
0.51
0.015
0.020
0.89
1.65
0.035
0.065
0.20
0.30
0.008
0.012
18.93
21.33
0.745
0.840
7.62
8.26
0.300
0.325
5.59
7.11
0.220
0.280
2.29
2.79
0.090
0.110
7.37
7.87
0.290
0.310
2.79
3.81
0.110
0.150
1.27
2.03
0.050
0.080
0.38
1.52
.015
0.060
ECN: S-03946—Rev. D, 09-Jul-01
DWG: 5482
Document Number: 71261
06-Jul-01
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1
Package Information
Vishay Siliconix
MINI QFN-16L
(1)
(2)
(3)
(4)
L1
(5)
(16)
L
D
(12) (11) (10) (9)
(8)
(7)
(15)
(6)
(16)
(5)
(15)
(6)
(14)
(7)
(13)
(8)
E
(13)
(14)
(12) (11) (10) (9)
(2)
(1)
(3)
(4)
e
DIM
C
b
A
A1
BACK SIDE VIEW
MILLIMETERS
MIN.
NAM
INCHES
MAX.
MIN.
NAM
MAX.
A
0.70
0.75
0.80
0.0275
0.0295
0.0315
A1
0
-
0.05
0
-
0.002
b
0.15
0.20
0.25
0.0059
0.0078
0.0098
C
0.15
0.20
0.25
0.0059
0.0078
0.0098
D
2.60 BSC
0.1023 BSC
E
1.80 BSC
0.0708 BSC
e
0.40 BSC
0.0157 BSC
L
0.35
0.40
0.45
0.0137
0.0157
0.0177
L1
0.45
0.50
0.55
0.0177
0.0196
0.0216
ECN T-06380-Rev. A, 14-Aug-06
DWG: 5954
Document Number: 74323
14-Aug-06
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1
Package Information
Vishay Siliconix
TSSOP: 16-LEAD
DIMENSIONS IN MILLIMETERS
Symbols
Min
Nom
Max
A
-
1.10
1.20
A1
0.05
0.10
0.15
A2
-
1.00
1.05
0.38
B
0.22
0.28
C
-
0.127
-
D
4.90
5.00
5.10
E
6.10
6.40
6.70
E1
4.30
4.40
4.50
e
-
0.65
-
L
0.50
0.60
0.70
L1
0.90
1.00
1.10
y
-
-
0.10
θ1
0°
3°
6°
ECN: S-61920-Rev. D, 23-Oct-06
DWG: 5624
Document Number: 74417
23-Oct-06
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1
PAD Pattern
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Vishay Siliconix
RECOMMENDED MINIMUM PAD FOR TSSOP-16
0.193
(4.90)
0.171
0.014
0.026
0.012
(0.35)
(0.65)
(0.30)
(4.35)
(7.15)
0.281
0.055
(1.40)
Recommended Minimum Pads
Dimensions in inches (mm)
Revision: 02-Sep-11
1
Document Number: 63550
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PAD Pattern
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR MINI QFN 16L
0.562
(0.0221)
0.400
(0.0157)
0.225
(0.0089)
1
2.900
(0.1142)
0.463
(0.0182)
1.200
(0.0472)
2.100
(0.0827)
Mounting Footprint
Dimensions in mm (inch)
Document Number: 66557
Revision: 05-Mar-10
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1
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-16
RECOMMENDED MINIMUM PADS FOR SO-16
0.372
(9.449)
0.152
0.022
0.050
0.028
(0.559)
(1.270)
(0.711)
(3.861)
0.246
(6.248)
0.047
(1.194)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
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24
Document Number: 72608
Revision: 21-Jan-08
Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
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contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000