VS-HFA70FA120 www.vishay.com Vishay Semiconductors HEXFRED® Ultrafast Soft Recovery Diode, 70 A FEATURES • Fast recovery time characteristic • Electrically isolated base plate • Large creepage distance between terminal • Simplified mechanical designs, rapid assembly • Designed and qualified for industrial level • UL approved file E78996 SOT-227 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION/APPLICATIONS PRODUCT SUMMARY VR The dual diode series configuration (VS-HFA70FA120) is used for output rectification or freewheeling/clamping operation and high voltage application. 1200 V VF (typical) 2.3 V trr (typical) 51 ns IF(AV) per module at TC 70 A at 94 °C Package SOT-227 The semiconductor in the SOT-227 package is isolated from the copper base plate, allowing for common heatsinks and compact assemblies to be built. These modules are intended for general applications such as HV power supplies, electronic welders, motor control and inverters. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Cathode to anode voltage VR Continuous forward current per leg IF Single pulse forward current per leg IFSM Maximum power dissipation per module RMS isolation voltage PD VISOL Operating junction and storage temperature range TEST CONDITIONS MAX. UNITS 1200 V TC = 110 °C 35 TJ = 25 °C 380 A TC = 110 °C 174 W Any terminal to case, t = 1 min 2500 V - 55 to 150 °C TJ, TStg ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Cathode to anode breakdown voltage Forward voltage Reverse leakage current Revision: 22-Jul-13 SYMBOL VBR VFM IRM TEST CONDITIONS MIN. TYP. MAX. 1200 - - IF = 30 A - 2.30 3.00 IF = 60 A - 2.89 3.80 IF = 30 A, TJ = 125 °C - 2.14 2.44 IF = 60 A, TJ = 125 °C - 2.82 3.27 VR = VR rated - 1.2 75 TJ = 125 °C, VR = VR rated - 1.0 - TJ = 150 °C, VR = VR rated - 2.7 10 IR = 100 μA UNITS V μA mA Document Number: 94289 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA70FA120 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. - 51 - TJ = 25 °C - 134 - TJ = 125 °C - 204 - - 12 - - 18 - TJ = 25 °C - 790 - TJ = 125 °C - 1770 - VR = 1200 V - 24 - pF MIN. TYP. MAX. UNITS - - 0.46 TJ = 25 °C Reverse recovery time trr Peak recovery current TJ = 25 °C IRRM Reverse recovery charge Qrr Junction capacitance CT TJ = 125 °C IF = 1 A dIF/dt = 200 A/μs VR = 30 V UNITS ns IF = 50 A dIF/dt = - 200 A/μs VR = 200 V A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Junction to case, single leg conducting TEST CONDITIONS RthJC Junction to case, both legs conducting - - 0.23 - 0.10 - Weight - 30 - g Mounting torque - - 1.3 Nm Case to heatsink RthCS Flat, greased surface SOT-227 1000 10 000 TJ = 150 °C IR - Reverse Current (μA) IF - Instantaneous Forward Current (A) Case style °C/W TJ = 150 °C 100 TJ = 125 °C TJ = 25 °C 10 1 1000 TJ = 125 °C 100 10 1 TJ = 25 °C 0.1 0.01 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 200 400 600 800 1000 1200 VF - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics (Per Leg) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 22-Jul-13 Document Number: 94289 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA70FA120 www.vishay.com Vishay Semiconductors CT - Junction Capacitance (pF) 1000 100 10 10 100 1000 10 000 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Impedance (°C/W) 1 0.1 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 DC 0.01 PDM t1 t2 Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC Single pulse (thermal resistance) 0.001 0.0001 0.001 0.01 0.1 1 . 10 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg) 200 150 Average Power Loss (W) Allowable Case Temperature (°C) 175 125 100 DC 75 Square wave (d = 0.5) 80 % rated VR applied 50 25 150 RMS Limit 100 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 50 DC 0 0 0 10 20 30 40 50 60 70 80 90 IF - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current (Per Leg) Revision: 22-Jul-13 0 10 20 30 40 50 60 70 IF(AV) - Average Forward Current (A) Fig. 6 - Forward Power Losses Characteristics (Per Leg) Document Number: 94289 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA70FA120 www.vishay.com Vishay Semiconductors 3000 250 VR = 200 V IF = 50 A 200 VR = 200 V IF = 50 A IF = 30 A 2500 IF = 30 A 125 °C 2000 100 Qrr (nC) trr (ns) 150 25 °C 125 °C 1500 1000 50 25 °C 500 0 0 100 100 1000 1000 dIF/dt (A/μs) dIF/dt (A/μs) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt Fig. 8 - Typical Stored Charge vs. dIF/dt 35 VR = 200 V 30 IF = 30 A IF = 50 A Irr (nC) 25 20 125 °C 15 10 25 °C 5 0 100 1000 dIF/dt (A/μs) Fig. 9 - Typical Reverse Recovery Current vs. dIF/dt VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D G IRFP250 S Fig. 10 - Reverse Recovery Parameter Test Circuit Revision: 22-Jul-13 Document Number: 94289 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA70FA120 www.vishay.com Vishay Semiconductors (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (4) Qrr - area under curve defined by trr and IRRM (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 11 - Reverse Recovery Waveform and Definitions ORDERING INFORMATION TABLE Device code VS- HF A 70 F A 120 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - HEXFRED® family 3 - Process designator (A = electron irradiated) 4 - Current rating (70 = 70 A) 5 - Circuit configuration (2 separate diodes, parallel pin-out) 6 - Package indicator (SOT-227 standard insulated base) 7 - Voltage rating (120 = 1200 V) CIRCUIT CONFIGURATION CIRCUIT CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING Lead Assignment 2 separate diodes, parallel pin-out Revision: 22-Jul-13 4 3 1 2 4 3 1 2 F Document Number: 94289 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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