VSB3200S www.vishay.com Vishay General Semiconductor High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses TMBS ® • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 DO-204AC (DO-15) TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters or polarity protection application. PRIMARY CHARACTERISTICS IF(AV) 3.0 A MECHNICAL DATA VRRM 200 V IFSM 50 A Case: DO-204AC (DO-15) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade VF at IF = 3.0 A 0.64 V TJ max. 150 °C Package DO-204AC (DO-15) Diode variation Single Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test per Polarity: Color band denotes the cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VSB3200S Max. repetitive peak reverse voltage VRRM 200 V Max. average forward rectified current (fig. 1) (1) IF(AV) 3.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 50 A dV/dt 10 000 V/μs TJ, TSTG - 40 to + 150 °C Voltage rate of change (rated VR) Operating junction and storage temperature range UNIT Note (1) Units mounted on PCB with 14 mm x 14 mm copper pad areas 0.375" (9.5 mm) lead length ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Breakdown voltage IR = 1.0 mA Instantaneous forward voltage (1) IF = 3.0 A Reverse current per diode (2) VR = 200 V Typical juntion capacitance 4.0 V, 1 MHz TA = 25 °C TA = 25 °C TA = 125 °C TA = 25 °C TA = 125 °C SYMBOL TYP. MAX. VBR 200 (min.) - VF IR CJ 0.98 1.40 0.64 0.72 UNIT V 1.3 50 μA 0.98 7 mA 170 - pF Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms Revision: 14-Aug-13 Document Number: 89143 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSB3200S www.vishay.com Vishay General Semiconductor THERMAL CHARACTERSTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VSB3200S RJA 64 RJL 18 Typical thermal resistance (1) UNIT °C/W Note (1) Units mounted on PCB with 14 mm x 14 mm copper pad areas 0.375" (9.5 mm) lead length ODERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE VSB3200S-M3/54 0.399 54 4000 13" diameter paper tape and reel VSB3200S-M3/73 0.399 73 2000 Ammo pack packaging RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 10 Resistive or Inductive Load Instantaneous Forward Current (A) Average Forward Rectified Current (A) 3.5 3.0 2.5 2.0 1.5 1.0 14 mm x 14 mm Copper Pads 0.5 0.375" (9.5 mm) Lead Length TA = 125 °C 1 TA = 25 °C 0.1 0 0 25 50 75 100 125 150 175 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Ambient Temperature (°C) Instantaneous Forward Voltage (V) Fig. 1 - Maximum Forward Current Derating Curve Fig. 3 - Typical Instantaneous Forward Characteristics 2.4 10 D = 0.3 Instantaneous Reverse Current (mA) D = 0.8 2.0 Average Power Loss (W) TA = 150 °C D = 0.5 D = 0.2 1.6 D = 0.1 D = 1.0 1.2 T 0.8 0.4 D = tp/T tp TA = 150 °C 1 TA = 125 °C 0.1 0.01 0.001 TA = 25 °C 0.0001 0 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 10 20 30 40 50 60 70 80 90 Average Forward Current (A) Percent of Rated Peak Reverse Voltage (%) Fig. 2 - Forward Power Loss Characteristics Fig. 4 - Typical Reverse Characteristics Revision: 14-Aug-13 100 Document Number: 89143 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSB3200S www.vishay.com Vishay General Semiconductor 100 Transient Thermal Impedance (°C/W) Junction Capacitance (pF) 1000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 100 10 0.1 1 10 10 Junction to Ambient 1 0.01 100 0.1 1 10 100 Reverse Voltage (V) t - Pulse Duration (s) Fig. 5 - Typical Junction Capacitance Fig. 6 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-204AC (DO-15) 0.034 (0.86) 0.028 (0.71) DIA. 1.0 (25.4) MIN. 0.300 (7.6) 0.230 (5.8) 0.140 (3.6) 0.104 (2.6) DIA. 1.0 (25.4) MIN. Revision: 14-Aug-13 Document Number: 89143 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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