S5MS-M3 Datasheet

S5MS-M3
www.vishay.com
Vishay General Semiconductor
SMD Photovoltaic Solar Cell Protection Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated pallet chip junction
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
DO-214AB (SMC)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
For use in solar cell panel blocking diode for protection,
using DC forward current without reverse bias.
IF(AV)
5.0 A
VRRM
1000 V
IFSM
100 A
MECHANICAL DATA
IR
10 μA
VF at IF = 5.0 A
0.90 V
Case: DO-214AB (SMC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - RoHS-compliant, commercial grade
TJ max.
150 °C
Package
DO-214AB (SMC)
Diode variations
Single die
Terminals: Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
per
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
S5MS
VRRM
1000
Device marking code
5MS
Max. repetitive peak reverse voltage
Max. DC forward current (fig. 1)
UNIT
TM = 110 °C
TA = 25 °C
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
Operating junction and storage temperature range
Junction temperature in DC forward current without
reverse bias, t  1 h (3)
IF
5.0
V
(1)
1.6 (2)
A
IFSM
100
A
TOP, TSTG
-55 to +150
°C
TJ
 200
°C
Notes
(1) Mounted on 30 mm x 30 mm Al PCB
(2) Free air, mounted on recommended copper pad area
(3) Meets the requirements of IEC 61215 Ed. 2 bypass diode thermal test
Revision: 27-Jul-15
Document Number: 89931
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
S5MS-M3
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
IF = 2.5 A
IF = 5.0 A
Instantaneous forward voltage
IF = 2.5 A
IF = 5.0 A
SYMBOL
TA = 25 °C
VF (1)
TA = 125 °C
TA = 25 °C
IR (2)
TYP.
MAX.
0.94
-
0.99
1.15
0.82
-
0.90
1.00
-
10
50
250
UNIT
V
Reverse current
Rated VR
Max. reverse recovery time
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
trr
2.5
-
μs
Typical junction capacitance
4.0 V, 1 MHz
CJ
40
-
pF
TA = 125 °C
μA
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width  40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
RJA
Typical thermal resistance
S5MS
(1)
UNIT
92
RJM (2)
°C/W
8
Notes
Free air, mounted on recommended copper pad area. Thermal resistance RJA - junction to ambient
(2) Mounted on 30 mm x 30 mm Al PCB. Thermal resistance R
JM - junction to mount
(1)
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
S5MS-M3/57T
0.211
57T
850
7" diameter plastic tape and reel
S5MS-M3/9AT
0.211
9AT
3500
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
6.0
6.0
5.0
4.0
3.0
2.0
TA = 25 °C (2)
1.0
D = 0.5
Average Power Loss (W)
DC Forward Current (A)
TM = 110 °C (1)
5.0
D = 0.2
D = 0.8
D = 0.3
D = 1.0
D = 0.1
4.0
3.0
T
2.0
1.0
D = tp/T
0
tp
0
0
25
50
75
100
125
150
0
1
2
3
4
5
6
Ambient Temperature (°C)
Average Forward Current (A)
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics
Notes
(1) Mounted on 30 mm x 30 mm Al PCB T
M measured at the
terminal (RJM = 8 °C/W)
(2) Free air, mounted on recommended copper pad area
(RJA = 92 °C/W)
Revision: 27-Jul-15
Document Number: 89931
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
S5MS-M3
www.vishay.com
Vishay General Semiconductor
100
TJ = 150 °C
10
TJ = 125 °C
1
TJ = 25 °C
0.1
Pulse Width = 300 μs
1 % Duty Cycle
Instantaneous Reverse Current (μA)
0.01
0.2
0.4
0.8
0.6
1.0
1.2
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Junction Capacitance (pF)
Instantaneous Forward Current (A)
100
10
0.1
1.4
1
10
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Junction Capacitance
100
1000
TJ = 150 °C
100
TJ = 125 °C
10
1
TJ = 25 °C
0.1
0.01
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AB (SMC)
Cathode Band
Mounting Pad Layout
0.185 (4.69) MAX.
0.246 (6.22)
0.220 (5.59)
0.126 (3.20)
0.114 (2.90)
0.126 (3.20) MIN.
0.280 (7.11)
0.260 (6.60)
0.060 (1.52) MIN.
0.012 (0.305)
0.006 (0.152)
0.320 (8.13) REF.
0.103 (2.62)
0.079 (2.06)
0.060 (1.52)
0.030 (0.76)
0.008 (0.2)
0 (0)
0.320 (8.13)
0.305 (7.75)
Revision: 27-Jul-15
Document Number: 89931
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000