Si8824EDB Datasheet

Si8824EDB
www.vishay.com
Vishay Siliconix
N-Channel 20 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
RDS(on) (Ω) MAX.
ID (A) a
0.075 at VGS = 4.5 V
2.9
0.082 at VGS = 2.5 V
2.7
0.090 at VGS = 1.8 V
2.6
0.125 at VGS = 1.5 V
2.2
0.175 at VGS = 1.2 V
1.5
VDS (V)
20
MICRO
FOOT®
0.8 x 0.8
S
3
xxx
xx
• Ultra small 0.8 mm x 0.8 mm outline
• Ultra thin 0.357 mm height
• Typical ESD protection 2000 V (HBM)
2.7 nC
• Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
APPLICATIONS
D
• Ultraportable and wearable devices
S
2
• Load switch with low voltage drop
• Load switch for 1.2 V, 1.5 V, and 1.8 V
power lines
G
• Small signal and high speed switching
8
0.
m
m
1
• TrenchFET® power MOSFET
Qg (TYP.)
mm
0.8
Backside View
1
G
4
D
Bump Side View
S
Marking Code: AM
N-Channel MOSFET
Ordering Information:
Si8824EDB-T2-E1 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
20
Gate-Source Voltage
VGS
±5
TA = 70 °C
2.3 a
ID
TA = 25 °C
2.1 b
1.7 b
TA = 70 °C
Pulsed Drain Current (t = 100 μs)
Continuous Source-Drain Diode Current
IDM
TA = 25 °C
0.7 a
IS
TA = 25 °C
0.4 b
0.9 a
TA = 70 °C
0.6 a
PD
TA = 25 °C
W
0.5 b
0.3 b
TA = 70 °C
Operating Junction and Storage Temperature Range
A
15
TA = 25 °C
Maximum Power Dissipation
V
2.9 a
TA = 25 °C
Continuous Drain Current (TJ = 150 °C)
UNIT
TJ, Tstg
-55 to +150
Soldering Recommendations (Peak Temperature) c
°C
260
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient a, d
Maximum Junction-to-Ambient b, e
SYMBOL
t≤5s
RthJA
TYPICAL
MAXIMUM
105
135
200
260
UNIT
°C / W
Notes
a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s.
b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 5 s.
c. Refer to IPC / JEDEC® (J-STD-020), no manual or hand soldering.
d. Maximum under steady state conditions is 185 °C / W.
e. Maximum under steady state conditions is 330 °C / W.
S15-0338-Rev. A, 23-Feb-15
Document Number: 62978
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si8824EDB
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
VGS = 0 V, ID = 250 μA
20
-
-
-
V
13
-
-
-2
-
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
ΔVDS / TJ
VGS(th) Temperature Coefficient
ΔVGS(th) / TJ
Gate-Source Threshold Voltage
ID = 250 μA
VGS(th)
VDS = VGS , ID = 250 μA
0.35
-
0.8
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 5 V
-
-
±2
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current a
ID(on)
Drain-Source On-State Resistance a
Forward Transconductance a
RDS(on)
gfs
VDS = 20 V, VGS = 0 V
-
-
1
VDS = 20 V, VGS = 0 V, TJ = 55 °C
-
-
10
VDS ≥ 5 V, VGS = 4.5 V
10
-
0.075
VGS = 4.5 V, ID = 1 A
-
0.060
VGS = 2.5 V, ID = 1 A
-
0.065
0.082
VGS = 1.8 V, ID = 0.5 A
-
0.070
0.090
VGS = 1.5 V, ID = 0.5 A
-
0.080
0.125
VGS = 1.2 V, ID = 0.1 A
-
0.090
0.175
VDS = 10 V, ID = 1 A
-
11
-
-
400
-
mV / °C
V
μA
A
Ω
S
Dynamic b
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Rg
VDS = 10 V, VGS = 0 V, f = 1 MHz
VDS = 10 V, VGS = 4.5 V, ID = 1 A
f = 1 MHz
td(on)
tr
td(off)
VDD = 10 V, RL = 10 Ω
ID ≅ 1 A, VGEN = 4.5 V, Rg = 1 Ω
tf
-
60
-
-
35
-
-
2.7
6
-
0.46
-
-
0.93
-
pF
nC
Ω
-
3
-
-
5
10
-
20
40
-
17
35
-
10
20
-
-
0.7
-
-
15
-
0.7
1.2
V
-
11
20
ns
-
5
10
nC
-
7
-
-
4
-
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TC = 25 °C
IS = 1 A, VGS = 0 V
IF = 1 A, dI / dt = 100 A / μs, TJ = 25 °C
A
ns
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-0338-Rev. A, 23-Feb-15
Document Number: 62978
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si8824EDB
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10-3
1.0
10-4
TJ = 150 °C
IGSS - Gate Current (A)
IGSS - Gate Current (mA)
0.8
TJ = 25 °C
0.6
0.4
0.2
10
-5
TJ = 25 °C
10-6
10-7
10-8
10-9
0
0
4
8
12
16
0
4
VGS - Gate-Source Voltage (V)
8
12
16
VGS - Gate-to-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
Gate Current vs. Gate-Source Voltage
15
10
VGS = 5 V thru 2 V
8
ID - Drain Current (A)
ID - Drain Current (A)
12
VGS = 1.5 V
9
6
3
6
4
TC = 25 °C
TC = 125 °C
2
VGS = 1 V
TC = - 55 °C
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VDS - Drain-to-Source Voltage (V)
0.0
0.3
0.6
0.9
1.2
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
1.5
600
0.20
VGS = 1.2 V
500
Ciss
VGS = 1.5 V
0.12
VGS = 1.8 V
0.08
VGS = 4.5 V
0.04
VGS = 2.5 V
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
0.16
400
300
200
Coss
100
Crss
0
0
0
3
6
9
ID - Drain Current (A)
12
On-Resistance vs. Drain Current
S15-0338-Rev. A, 23-Feb-15
15
0
2
4
6
8
10
12
VDS - Drain-to-Source Voltage (V)
Capacitance vs. Drain-to-Source Voltage
Document Number: 62978
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si8824EDB
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
5
10
TJ = 150 °C
VDS = 10 V
IS - Source Current (A)
VGS - Gate-to-Source Voltage (V)
ID = 1 A
4
VDS = 5 V
3
2
VDS = 16 V
TJ = 25 °C
1
1
0.1
0
0
1
1
2
2
3
0.0
3
0.2
0.4
0.6
0.8
1.0
Qg - Total Gate Charge (nC)
VSD - Source-to-Drain Voltage (V)
Gate Charge
Source-Drain Diode Forward Voltage
1.2
0.7
1.5
1.4
0.6
VGS = 4.5 V; ID = 1 A
1.3
VGS = 1.2 V; ID = 0.1 A
VGS(th) (V)
RDS(on) - On-Resistance (Normalized)
VGS = 2.5 V, 1.8 V, 1.5 V; ID = 1 A
1.2
1.1
0.5
ID = 250 μA
0.4
1.0
0.3
0.9
0.8
- 50
0.2
- 25
0
25
50
75
100
TJ - Junction Temperature (°C)
125
- 50
150
- 25
0
25
50
75
100
125
150
TJ - Temperature (°C)
Threshold Voltage
On-Resistance vs. Junction Temperature
0.20
14
ID = 1 A
12
10
Power (W)
RDS(on) - On-Resistance (Ω)
0.16
0.12
TJ = 125 °C
0.08
6
4
TJ = 25 °C
0.04
8
2
0
0
1
2
3
4
5
0
0.001
VGS - Gate-to-Source Voltage (V)
1
Time (s)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power (Junction-to-Ambient)
S15-0338-Rev. A, 23-Feb-15
0.01
0.1
10
100
1000
Document Number: 62978
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si8824EDB
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
Limited by RDS(on)*
ID - Drain Current (A)
10
IDM Limited
ID Limited
100 µs
1
1 ms
100 ms
0.1
10 s
1 s, 10ms
DC
TA = 25 °C
BVDSS Limited
0.01
0.1
1
10
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
100
Safe Operating Area, Junction-to-Ambient
0.8
3.0
Power Dissipation (W)
ID - Drain Current (A)
2.5
2.0
1.5
1.0
0.6
0.4
0.2
0.5
0.0
0.0
0
25
50
75
100
125
TA - Ambient Temperature (°C)
Current Derating*
150
25
50
75
100
125
150
T A - Ambient Temperature (°C)
Power Derating
Note
• When mounted on 1" x 1" FR4 with full copper.
* The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S15-0338-Rev. A, 23-Feb-15
Document Number: 62978
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si8824EDB
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.05
PDM
0.1
t1
0.02
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 185 °C/W
3. T JM - T A = PDMZthJA(t)
Single Pulse
0.01
10 -4
4. Surface Mounted
10 -3
10 -2
10 -1
1
100
10
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient (on 1" x 1" FR4 board with maximum copper)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.05
PDM
0.1
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = R thJA = 330 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse
0.01
10 -4
10 -3
4. Surface Mounted
10 -2
10 -1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient (on 1" x 1" FR4 board with minimum copper)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62978.
S15-0338-Rev. A, 23-Feb-15
Document Number: 62978
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
MICRO FOOT®: 4-Bump (0.8 mm x 0.8 mm, 0.4 mm Pitch)
D
S
e
S
e
XXX
S
D
S
S
4x Ø b
G
D
S
AK
Mark on Backside of die
A2
4-Ø 0.205 to 0.225 Note 5
Solder Mask ~Ø 0.215
A1
A
e
b
k
b1
e
Bump Note 2
Note 4
Notes
(1) Laser mark on the backside surface of die
(2) Bumps are 95.5 % Sn,3.8 % Ag,0.7 % Cu
(3) “i” is the location of pin 1
(4) “b1” is the diameter of the solderable substrate surface, defined by an opening in the solder resist layer solder mask defined.
(5) Non-solder mask defined copper landing pad.
DIM.
MILLIMETERS a
INCHES
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
A
0.328
0.365
0.402
0.0129
0.0144
0.0158
A1
0.136
0.160
0.184
0.0053
0.0062
0.0072
A2
0.192
0.205
0.218
0.0076
0.0081
0.0086
b
0.200
0.220
0.240
0.0078
0.0086
0.0094
b1
0.175
0.0068
e
0.400
0.0157
S
0.160
0.180
0.200
0.0062
0.0070
0.0078
D
0.720
0.760
0.800
0.0283
0.0299
0.0314
K
0.040
0.070
0.100
0.0015
0.0027
0.0039
Note
a. Use millimeters as the primary measurement.
ECN: T15-0053-Rev. A, 16-Feb-15
DWG: 6033
Revision: 16-Feb-15
1
Document Number: 69442
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12
1
Document Number: 91000