VS-ST303SP Series www.vishay.com Vishay Semiconductors Inverter Grade Thyristors (Stud Version), 300 A FEATURES • Center amplifying gate • High surge current capability • Low thermal impedance • High speed performance TO- 209AE (TO-118) • Compression bonding • Designed and qualified for industrial level PRODUCT SUMMARY • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 IT(AV) 300 A VDRM/VRRM 400 V, 1200 V VTM 2.16 V TYPICAL APPLICATIONS ITSM at 50 Hz 3000 A • Inverters ITSM at 60 Hz 3150 A • Choppers IGT 200 mA • Induction heating TJ -40 °C to 125 °C Package TO-209AE (TO-118) Diode variation Single SCR • All types of force-commutated converters MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(AV) TC IT(RMS) VALUES UNITS 300 A 65 °C 471 ITSM I2t 50 Hz 7950 60 Hz 8320 50 Hz 316 60 Hz 288 VDRM/VRRM A kA2s 400 to 1200 V tq 10/20 μs TJ -40 to 125 °C IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-ST303S VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 04 400 500 08 800 900 12 1200 1300 50 Revision: 08-Jul-14 Document Number: 94375 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST303SP Series www.vishay.com Vishay Semiconductors CURRENT CARRYING CAPABILITY ITM FREQUENCY ITM 180° el ITM UNITS 100 µs 180° el 50 Hz 670 470 1050 940 5240 4300 400 Hz 480 330 1021 710 1800 1270 1000 Hz 230 140 760 470 730 430 2500 Hz 35 - 150 - 90 Recovery voltage VR Voltage before turn-on VD 50 50 VDRM VDRM VDRM 50 Case temperature 40 Equivalent values for RC circuit - 50 Rise of on-state current di/dt 65 10/0.47 40 A V 65 10/0.47 40 A/μs 65 °C μF 10/0.47 ON-STATE CONDUCTION PARAMETER SYMBOL Maximum average on-state current at case temperature Maximum RMS on-state current Maximum peak, one half cycle, non-repetitive surge current IT(AV) IT(RMS) ITSM TEST CONDITIONS 180° conduction, half sine wave °C 471 7950 t = 8.3 ms t = 10 ms t = 10 ms I2t A 65 t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms No voltage reapplied 100 % VRRM reapplied No voltage reapplied UNITS 300 DC at 45 °C case temperature t = 8.3 ms Maximum I2t for fusing VALUES 8320 A 6690 Sinusoidal half wave, initial TJ = TJ maximum 7000 316 288 224 100 % VRRM reapplied 204 Maximum I2t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 3160 Maximum peak on-state voltage VTM ITM = 1255 A, TJ = TJ maximum, tp = 10 ms sine wave pulse 2.16 Low level value of threshold voltage VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 1.44 High level value of threshold voltage VT(TO)2 (I > x IT(AV)), TJ = TJ maximum 1.46 Low level value of forward slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.57 High level value of forward slope resistance rt2 (I > x IT(AV)), TJ = TJ maximum 0.56 Maximum holding current IH TJ = 25 °C, IT > 30 A 600 Typical latching current IL TJ = 25 °C, VA = 12 V, Ra = 6 , IG = 1 A 1000 kA2s kA2s V m mA SWITCHING PARAMETER SYMBOL Maximum non-repetitive rate of rise of turned-on current Typical delay time VALUES UNITS TJ = TJ maximum, VDRM = Rated VDRM ITM = 2 x dI/dt 1000 A/μs td TJ = 25 °C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 μs Resistive load, gate pulse: 10 V, 5 source 0.80 tq TJ = TJ maximum, ITM = 550 A, commutating dI/dt = 40 A/μs VR = 50 V, tp = 500 μs, dV/dt = 200 V/μs dI/dt minimum Maximum turn-off time maximum TEST CONDITIONS 10 μs 20 Revision: 08-Jul-14 Document Number: 94375 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST303SP Series www.vishay.com Vishay Semiconductors BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 500 V/μs Maximum critical rate of rise of off-state voltage dV/dt TJ = TJ maximum, linear to 80 % VDRM, higher value available on request Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied 50 mA SYMBOL TEST CONDITIONS VALUES UNITS TRIGGERING PARAMETER Maximum peak gate power PGM Maximum average gate power PG(AV) Maximum peak positive gate current IGM Maximum peak positive gate voltage +VGM Maximum peak negative gate voltage -VGM Maximum DC gate currrent required to trigger IGT Maximum DC gate voltage required to trigger VGT Maximum DC gate current not to trigger IGD Maximum DC gate voltage not to trigger VGD 60 TJ = TJ maximum, f = 50 Hz, d% = 50 10 10 TJ = TJ maximum, tp 5 ms 20 5 200 TJ = 25 °C, VA = 12 V, Ra = 6 TJ = TJ maximum, rated VDRM applied W A V mA 3 V 20 mA 0.25 V VALUES UNITS THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum operating junction temperature range TEST CONDITIONS TJ -40 to 125 Maximum storage temperature range TStg -40 to 150 Maximum thermal resistance, junction to case RthJC DC operation 0.10 Maximum thermal resistance, case to heatsink RthCS Mounting surface, smooth, flat and greased 0.03 Non-lubricated threads 48.5 (425) N·m (lbf · in) 535 g Mounting force, ± 10 % Approximate weight Case style See dimensions - link at the end of datasheet °C K/W TO-209AE (TO-118) RthJ-hs CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION 180° 0.011 0.008 120° 0.013 0.014 90° 0.017 0.018 60° 0.025 0.026 30° 0.041 0.042 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note • The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC Revision: 08-Jul-14 Document Number: 94375 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST303SP Series Vishay Semiconductors 130 Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) www.vishay.com ST303SSeries RthJC (DC) = 0.10 K/ W 120 110 Conduc tion Angle 100 90 30° 60° 80 90° 120° 70 180° 60 0 50 100 150 200 250 300 350 130 ST303SSeries R (DC) = 0.10 K/ W 120 thJC 110 100 Conduction Period 90 80 70 30° 60° 60 90° 120° 50 0 100 200 300 DC 400 500 Average On-state Current (A) Average On-state Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics 600 R 0.5 K / ta el -D 100 ST303SSeries TJ = 125°C W K/ Conduction Angle 01 0. 200 = RMSLimit 300 SA 400 0. 06 K/ W 0. 08 K/ W 0. 12 K/ W 0.1 6K /W 0.2 K/ W 0.3 K/ W W K/ 180° 120° 90° 60° 30° 500 h R t 03 0. Maximum Average On-state Power Loss (W) 180° 40 W 0 0 50 100 150 200 250 25 300 Average On-state Current (A) 50 75 100 125 Maximum Allowab le Ambient Temperature (°C) Maximum Average On-state Power Loss (W) Fig. 3 - On-State Power Loss Characteristics 900 DC 180° 120° 90° 60° 30° 800 700 600 R th S A = 0. 0. 03 01 K/ K/ W W 0. 06 -D K/ el W ta 500 0.1 2 400 RMSLimit 300 200 Conduction Period ST303SSeries TJ = 125°C 100 R K/ W 0.2 K/ W 0.3 K/ W 0.5 K /W 0 0 25 50 100 150 200 250 300 350 400 450 500 Average On-state Current (A) 50 75 100 125 Maximum Allowab le Ambient Temperature (°C) Fig. 4 - On-State Power Loss Characteristics Revision: 08-Jul-14 Document Number: 94375 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST303SP Series 7000 Vishay Semiconductors Transient Thermal Impedance Z thJC (K/ W) Peak Half Sine Wave On-state Current (A) www.vishay.com At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125°C @60 Hz 0.0083 s @50 Hz 0.0100 s 6500 6000 5500 5000 4500 4000 ST303S Series 3500 3000 1 10 100 1 Steady State Value RthJC = 0.10 K/ W (DC Operation) 0.1 0.01 ST303SSeries 0.001 0.001 8000 Maximum Non Repetitive Surge Current 7500 Versus Pulse Train Duration. Control Of Conduc tion May Not Be Maintained. 7000 Initial TJ = 125°C No Voltage Reapplied 6500 Rated VRRM Reapplied 6000 5500 5000 4500 4000 ST303SSeries 3500 3000 0.01 0.1 1 Pulse Train Duration (s) 1000 TJ = 25°C TJ = 125°C ST303S Series 100 3 4 5 6 10 320 I TM 300 280 260 = 500 A 300 A 200 A 100 A 50 A 240 220 200 180 160 ST303S Series TJ = 125 °C 140 120 100 80 10 20 30 40 50 60 70 80 90 100 7 Instantaneous On-state Voltage (V) Fig. 7 - On-State Voltage Drop Characteristics 8 Fig. 9 - Reverse Recovered Charge Characteristics Maximum Reverse Rec overy Current - Irr (A) Instantaneous On-state Current (A) 10000 2 1 Rate Of Fall Of On-state Current - di/ dt (A/ µs) Fig. 6 - Maximum Non-Repetitive Surge Current 1 0.1 Fig. 8 - Thermal Impedance ZthJC Characteristics Maximum Reverse Recovery Charge - Qrr (µC) Peak Half Sine Wave On-state Current (A) Fig. 5 - Maximum Non-Repetitive Surge Current 0.01 Square Wave Pulse Duration (s) Numb er Of Eq ual Amplitude Half Cycle Current Pulses (N) 180 160 140 ITM = 500 A 300 A 200 A 100 A 50 A 120 100 80 ST303S Series TJ = 125 °C 60 40 20 10 20 30 40 50 60 70 80 90 100 Rate Of Fall Of On-state Current - di/ dt (A/ µs) Fig. 10 - Reverse Recovery Current Characteristics Revision: 08-Jul-14 Document Number: 94375 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST303SP Series www.vishay.com Vishay Semiconductors Pea k On-state Current (A) 1E4 500 1000 1E3 50 Hz 400 200 100 1000 1500 Snubb er circ uit Rs = 10 ohms Cs = 0.47 µF V D = 80% VDRM 2000 2500 1E2 1E1 1E1 1E2 1E3 1E4 50 Hz ST303SSeries Sinusoidal pulse TC = 65°C tp 1E1 100 Snubber circuit R s = 10 ohms C s = 0.47 µF V D = 80% VDRM 1500 ST303S Series Sinusoida l pulse TC = 40°C tp 400 200 500 1E2 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 11 - Frequency Characteristics Peak On-state Current (A) 1E4 1E3 500 400 200 100 50 Hz 400 1000 2000 Snub b er c ircuit R s = 10 ohms C s = 0.47 µF V D = 80% VDRM 1500 2500 1E1 2000 ST303SSeries Trap ezoid al p ulse TC = 40°C d i/ dt = 50A/ µs 1E0 1E1 50 Hz 1000 Snub ber c ircuit R s = 10 ohms C s = 0.47 µF V D = 80% VDRM 1500 1E2 100 200 500 1E2 1E3 1E4 1E1 ST303SSeries Tra p ezoida l pulse TC = 65°C di/ d t = 50A/µs 1E2 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 12 - Frequency Characteristics Peak On-sta te Current (A) 1E4 1E3 400 200 100 50 Hz 400 500 1000 Snub ber circ uit Rs = 10 ohms Cs = 0.47 µF V D = 80% VDRM 1500 2000 1E1 1E2 50 Hz 2000 ST303S Series Tra pezoid al p ulse TC = 40°C di/ d t = 100A/ µs 1E3 Snubber c irc uit R s = 10 ohms C s = 0.47 µF V D = 80% VDRM 1500 2500 tp 1E0 1E1 100 500 1000 1E2 200 ST303S Series Trapezoidal pulse TC = 65°C di/ dt = 100A/ µs tp 1E4 1E1 1E2 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 13 - Frequency Characteristics Revision: 08-Jul-14 Document Number: 94375 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST303SP Series www.vishay.com Vishay Semiconductors Peak On-state Current (A) 1E5 tp 1E4 ST303SSeries Rectangular pulse di/ dt = 50A/ µs 20 joules p er pulse 3 5 20 joules per pulse 10 10 5 2 1 1E3 3 2 1 0.5 0.4 0.5 1E2 ST303SSeries Sinusoidal pulse tp 1E1 1E1 0.4 1E2 1E3 1E1 1E4 1E2 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 14 - Maximum On-State Energy Power Loss Characteristics Rec tangular gate pulse a) Recommended load line for rated di/ dt : 20V, 10ohms; tr<=1 µs b) Recommended load line for <=30% rated di/ dt : 10V, 10ohms 10 tr<=1 µs (1) PGM = 10W, (2) PGM = 20W, (3) PGM = 40W, (4) PGM = 60W, tp tp tp tp = 20ms = 10ms = 5ms = 3.3ms (a) (b) Tj=-40 °C 1 Tj=25 °C Tj=125 °C Instantaneous Gate Voltage (V) 100 (1) (2) (3) (4) VGD IGD 0.1 0.001 0.01 Device: ST303SSeries 0.1 Frequency Limited by PG(AV) 1 10 100 Instantaneous Gate Current (A) Fig. 15 - Gate Characteristics Revision: 08-Jul-14 Document Number: 94375 7 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST303SP Series www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- ST 30 3 S 12 P F K 0 P 1 2 3 4 5 6 7 8 9 10 11 1 - Vishay Semiconductors product 2 - Thyristor 3 - Essential part number 4 - 3 = Fast turn-off 5 - S = Compression bonding stud 6 - Voltage code x 100 = VRRM (see Voltage Ratings table) 7 - P = Stud base 3/4" 16UNF-2A 8 - Reapplied dV/dt code (for tq test condition) 9 - tq code tq (µs) up to 800 V 10 - 0 = Eyelet terminals (gate and auxiliary cathode leads) tq (µs) 1 = Fast-on terminals dV/dt - tq combinations available dV/dt (V/µs) 10 20 200 FN FK 20 FK only for 1000/1200 V (gate and auxiliary cathode leads) 11 - None = Standard production - P = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95080 Revision: 08-Jul-14 Document Number: 94375 8 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors TO-209AE (TO-118) DIMENSIONS in millimeters (inches) Ceramic housing 22 (0.87) MAX. 4.3 (0.17) DIA. White gate 10.5 (0.41) NOM. Red silicon rubber 245 (9.65) ± 10 (0.39) Red cathode 245 (9.65) 255 (10.04) 38 (1.50) MAX. DIA. White shrink 27.5 (1.08) MAX. 47 (1.85) MAX. 21 (0.82) MAX. Red shrink SW 45 3/4"16 UNF-2A (1) 49 (1.92) MAX. Fast-on terminals AMP. 280000-1 REF-250 22 (0. 86 )M IN . 9.5 (0. 3 7) MI N. 4.5 (0.18) MAX. Flexible leads C.S. 50 mm2 (0.078 s.i.) Note (1) For metric device: M24 x 1.5 - length 21 (0.83) maximum Document Number: 95080 Revision: 02-Aug-07 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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