VS-ST203C Series www.vishay.com Vishay Semiconductors Inverter Grade Thyristors (Hockey PUK Version), 370 A FEATURES • Metal case with ceramic insulator • All diffused design • Center amplifying gate • Guaranteed high dV/dt • International standard case TO-200AB (A-PUK) • Guaranteed high dI/dt • High surge current capability • Low thermal impedance TO-200AB (A-PUK) • High speed performance • Designed and qualified for industrial level PRODUCT SUMMARY • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 Package TO-200AB (A-PUK) Diode variation Single SCR IT(AV) 370 A VDRM/VRRM 1000 V, 1200 V VTM 1.72 V ITSM at 50 Hz 5260 A • Induction heating ITSM at 60 Hz 5510 A • All types of force-commutated converters IGT 200 mA TC/Ths 55 °C TYPICAL APPLICATIONS • Inverters • Choppers MAJOR RATINGS AND CHARACTERISTICS PARAMETER IT(AV) IT(RMS) ITSM I2t TEST CONDITIONS VALUES Ths Ths A 55 °C 700 A 25 °C 50 Hz 5260 60 Hz 5510 50 Hz 138 60 Hz 126 VDRM/VRRM tq Range TJ UNITS 370 A kA2s 1000 to 1200 V 20 to 30 μs -40 to 125 °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-ST203C..C VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 10 1000 1100 12 1200 1300 IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA 40 Revision: 16-Dec-13 Document Number: 94370 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST203C Series www.vishay.com Vishay Semiconductors CURRENT CARRYING CAPABILITY ITM FREQUENCY ITM ITM 180° el 100 µs 180° el 50 Hz 860 750 1340 1160 5620 5020 400 Hz 840 706 1400 1220 2940 2590 1000 Hz 700 580 1350 1170 1750 1520 2500 Hz 430 340 980 830 910 780 Recovery voltage Vr Voltage before turn-on Vd 50 50 50 VDRM VDRM VDRM 50 - - Rise of on-state current dI/dt Heatsink temperature 40 Equivalent values for RC circuit 55 40 47/0.22 UNITS 55 47/0.22 A V A/μs 40 55 °C μF 47/0.22 ON-STATE CONDUCTION PARAMETER Maximum average on-state current at heatsink temperature Maximum RMS on-state current SYMBOL IT(AV) IT(RMS) TEST CONDITIONS 180° conduction, half sine wave double side (single side) cooled DC at 25 °C heatsink temperature double side cooled t = 10 ms Maximum peak, one half cycle, non-repetitive surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms VALUES UNITS 370 (140) A 55 (85) °C 700 5260 No voltage reapplied 5510 100 % VRRM reapplied 4630 No voltage reapplied A 4420 Sinusoidal half wave, initial TJ = TJ maximum 100 % VRRM reapplied 138 126 98 kA2s 89 Maximum I2t for fusing I2t t = 0.1 to 10 ms, no voltage reapplied 1380 Maximum peak on-state voltage VTM ITM = 600 A, TJ = TJ maximum, tp = 10 ms sine wave pulse 1.72 Low level value of threshold voltage VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 1.17 High level value of threshold voltage VT(TO)2 (I > x IT(AV)), TJ = TJ maximum 1.22 Low level value of forward slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.92 High level value of forward slope resistance rt2 (I > x IT(AV)), TJ = TJ maximum 0.83 Maximum holding current IH TJ = 25 °C, IT > 30 A 600 Typical latching current IL TJ = 25 °C, VA = 12 V, Ra = 6 , IG = 1 A 1000 kA2s V m mA Revision: 16-Dec-13 Document Number: 94370 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST203C Series www.vishay.com Vishay Semiconductors SWITCHING PARAMETER SYMBOL Maximum non-repetitive rate of rise of turned on current dI/dt Typical delay time TJ = TJ maximum, VDRM = Rated VDRM ITM = 2 x dI/dt td TJ = 25 °C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 μs Resistive load, gate pulse: 10 V, 5 source tq TJ = TJ maximum, ITM = 300 A, commutating dI/dt = 20 A/μs VR = 50 V, tp = 500 μs, dV/dt: See table in device code minimum Maximum turn-off time TEST CONDITIONS maximum VALUES UNITS 1000 A/μs 0.8 20 μs 30 BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum critical rate of rise of off-state voltage dV/dt TJ = TJ maximum, linear to 80 % VDRM, higher value available on request 500 V/μs Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied 40 mA SYMBOL TEST CONDITIONS VALUES UNITS TRIGGERING PARAMETER Maximum peak gate power Maximum average gate power PGM PG(AV) Maximum peak positive gate current IGM Maximum peak positive gate voltage + VGM Maximum peak negative gate voltage - VGM Maximum DC gate currrent required to trigger IGT Maximum DC gate voltage required to trigger VGT Maximum DC gate current not to trigger IGD Maximum DC gate voltage not to trigger VGD TJ = TJ maximum, f = 50 Hz, d % = 50 60 10 10 TJ = TJ maximum, tp 5 ms 20 5 TJ = 25 °C, VA = 12 V, Ra = 6 TJ = TJ maximum, rated VDRM applied 200 W A V mA 3 V 20 mA 0.25 V VALUES UNITS THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum operating junction temperature range Maximum storage temperature range Maximum thermal resistance, junction to heatsink Maximum thermal resistance, case to heatsink SYMBOL TEST CONDITIONS TJ - 40 to 125 TStg - 40 to 150 RthJ-hs RthC-hs DC operation single side cooled DC operation double side cooled 0.08 0.033 DC operation double side cooled 0.017 Approximate weight Case style 0.17 DC operation single side cooled Mounting force, ± 10 % See dimensions - link at the end of datasheet °C K/W 4900 (500) N (kg) 50 g TO-200AB (A-PUK) Revision: 16-Dec-13 Document Number: 94370 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST203C Series www.vishay.com Vishay Semiconductors RthJ-hs CONDUCTION SINUSOIDAL CONDUCTION CONDUCTION ANGLE RECTANGULAR CONDUCTION Single Side Double Side Single Side Double Side 180° 0.015 0.017 0.011 0.011 120° 0.018 0.019 0.019 0.019 90° 0.024 0.024 0.026 0.026 60° 0.035 0.035 0.036 0.037 30° 0.060 0.060 0.060 0.061 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note • The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC 130 ST203C..C Series (Single side cooled) RthJ-hs (DC) = 0.17 K/W 120 110 100 Ø 90 Conduction angle 80 70 60 180° 30° 50 60° ST203C..C Series (Double side cooled) RthJ-hs (DC) = 0.08 K/W 120 90° 120° Maximum Allowable Heatsink Temperature (°C) Maximum Allowable Heatsink Temperature (°C) 130 110 100 90 Ø Conduction angle 80 70 60 50 180° 40 30 40 30° 0 50 150 100 200 250 0 Average On-State Current (A) 90° 120° 100 200 300 400 500 Average On-State Current (A) Fig. 1 - Current Ratings Characteristics Fig. 3 - Current Ratings Characteristics 130 130 110 100 90 Ø 80 Conduction period 70 60 50 60° 40 30° DC 90° 30 120° 180° ST203C..C Series (Double side cooled) RthJ-hs (DC) = 0.08 K/W 120 Maximum Allowable Heatsink Temperature (°C) ST203C..C Series (Single side cooled) RthJ-hs (DC) = 0.17 K/W 120 Maximum Allowable Heatsink Temperature (°C) 60° 20 110 100 90 Ø 80 Conduction period 70 60 50 DC 40 30 20 30° 60° 120° 90° 180° 20 0 50 100 150 200 250 300 350 Average On-State Current (A) Fig. 2 - Current Ratings Characteristics 400 0 100 200 300 400 500 600 700 800 Average On-State Current (A) Fig. 4 - Current Ratings Characteristics Revision: 16-Dec-13 Document Number: 94370 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST203C Series www.vishay.com Vishay Semiconductors 5500 180° 120° 90° 60° 30° 900 800 700 600 RMS limit 500 400 Ø 300 Conduction angle 200 ST203C..C Series TJ = 125 °C 100 4000 3500 3000 ST203C..C Series 2000 0.01 100 150 200 250 300 350 400 450 50 4500 2500 0 0 Maximum non-repetitive surge current versus pulse train duration. Control of conduction may not be maintained Initial TJ = 125 °C No voltage reapplied Rated VRRM reapplied 5000 Peak Half Sine Wave On-State Current (A) Maximum Average On-State Power Loss (W) 1000 Average On-State Current (A) Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled DC 180° 120° 90° 60° 30° 800 RMS limit 600 Ø Conduction period 400 ST203C..C Series TJ = 125 °C 200 0 0 100 200 300 400 500 600 700 Instantaneous On-State Current (A) Maximum Average On-State Power Loss (W) 1400 1000 10 000 ST203C..C Series 1000 TJ = 25 °C TJ = 125 °C 100 1.0 800 1.5 Average On-State Current (A) 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Instantaneous On-State Voltage (V) Fig. 9 - On-State Voltage Drop Characteristics Fig. 6 - On-State Power Loss Characteristics 5000 1 At any rated load condition and with rated VRRM applied following surge ST203C..C Series Initial TJ = 125 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 4000 3500 3000 2500 ZthJ-hs - Transient Thermal Impedance (K/W) 4500 Peak Half Sine Wave On-State Current (A) 1 Pulse Train Duration (s) Fig. 5 - On-State Power Loss Characteristics 1200 0.1 0.1 Steady state value RthJ-hs = 0.17 K/W (Single side cooled) RthJ-hs = 0.08 K/W (Double side cooled) (DC operation) 0.01 ST203C..C Series 2000 1 10 100 Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled 0.001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 10 - Thermal Impedance ZthJ-hs Characteristics Revision: 16-Dec-13 Document Number: 94370 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST203C Series Vishay Semiconductors 250 160 ITM = 500 A ST203C..C Series TJ = 125 °C ITM = 300 A 200 ITM = 200 A 150 100 ITM = 100 A 50 ITM = 50 A Irr - Maximum Reverse Recovery Current (A) Qrr - Maximum Reverse Recovery Charge (µC) www.vishay.com ITM = 300 A 120 ITM = 200 A 100 ITM = 100 A ITM = 50 A 80 60 40 ST203C..C Series TJ = 125 °C 20 0 0 0 20 40 60 80 100 0 dI/dt - Rate of Fall of On-State Current (A/µs) 20 40 60 80 100 dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 11 - Reverse Recovered Charge Characteristics Fig. 12 - Reverse Recovery Current Characteristics 10 000 Snubber circuit Rs = 47 Ω Cs = 0.22 µF VD = 80 % VDRM 100 1000 500 200 400 1500 1000 50 Hz 2500 3000 5000 tp 10 000 ST203C..C Series Sinusoidal pulse TC = 40 °C Peak On-State Current (A) 10 000 Peak On-State Current (A) ITM = 500 A 140 400 500 1500 1000 2500 3000 5000 10 000 100 10 100 1000 50 Hz 200 100 1000 tp 100 Snubber circuit Rs = 47 Ω Cs = 0.22 µF VD = 80 % VDRM 10 000 10 100 Pulse Basewidth (µs) ST203C..C Series Sinusoidal pulse TC = 55 °C 1000 10 000 Pulse Basewidth (µs) Fig. 13 - Frequency Characteristics 10 000 Snubber circuit Rs = 22 Ω Cs = 0.15 µF VD = 80 % VDRM 50 Hz 400 200 1000 1000 2500 1500 100 500 3000 5000 100 10 000 tp ST203C..C Series Trapezoidal pulse TC = 40 °C dI/dt = 50 A/µs 10 Peak On-State Current (A) Peak On-State Current (A) 10 000 Snubber circuit Rs = 47 Ω Cs = 0.22 µF VD = 80 % VDRM 400 500 2500 50 Hz 100 1000 1000 200 1500 3000 5000 100 10 000 tp ST203C..C Series Trapezoidal pulse TC = 55 °C dI/dt = 50 A/µs 10 10 100 1000 10 000 10 Pulse Basewidth (µs) 100 1000 10 000 Pulse Basewidth (µs) Fig. 14 - Frequency Characteristics Revision: 16-Dec-13 Document Number: 94370 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST203C Series www.vishay.com Vishay Semiconductors 10 000 Snubber circuit Rs = 47 Ω Cs = 0.22 µF VD = 80 % VDRM 1000 1000 2500 50 Hz 100 400 Peak On-State Current (A) Peak On-State Current (A) 10 000 200 500 1500 3000 5000 100 ST203C..C Series Trapezoidal pulse TC = 40 °C dI/dt = 100 A/µs 10 000 tp Snubber circuit Rs = 47 Ω Cs = 0.22 µF VD = 80 % VDRM 1000 50 Hz 400 1000 100 200 500 1500 2500 3000 5000 100 ST203C..C Series Trapezoidal pulse TC = 55 °C dI/dt = 100 A/µs 10 000 tp 10 10 10 100 1000 10 000 10 100 Pulse Basewidth (µs) 1000 10 000 Pulse Basewidth (µs) Fig. 15 - Frequency Characteristics 100 000 10 000 Peak On-State Current (A) Peak On-State Current (A) 100 000 20 joules per pulse 1 1000 0.3 0.2 4 2 10 0.5 0.1 100 ST203C..C Series Sinusoidal pulse tp ST203C..C Series Rectangular pulse dI/dt = 50 A/µs 10 000 20 joules per pulse 10 1000 3 0.5 1 0.3 5 2 0.2 100 0.1 tp 10 10 10 100 1000 10 000 10 Pulse Basewidth (µs) 100 1000 10 000 Pulse Basewidth (µs) Fig. 16 - Maximum On-State Energy Power Loss Characteristics 10 (1) PGM = 10 W, (2) PGM = 20 W, (3) PGM = 40 W, (4) PGM = 60 W, Rectangular gate pulse a) Recommended load line for rated dI/dt: 20 V, 10 Ω; tr ≤ 1 µs b) Recommended load line for ≤ 30 % rated dI/dt: 10 V, 10 Ω tr ≤ 1 µs tp = 20 ms tp = 10 ms tp = 5 ms tp = 3.3 ms (a) (b) TJ = 40 °C 1 TJ = 25 °C TJ = 125 °C Instantaneous Gate Voltage (V) 100 (1) (2) (3) (4) VGD IGD 0.1 0.001 0.01 Device: ST203C..C Series 0.1 Frequency limited by PG(AV) 1 10 100 Instantaneous Gate Current (A) Fig. 17 - Gate Characteristics Revision: 16-Dec-13 Document Number: 94370 7 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST203C Series www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- ST 20 3 C 12 C H H 1 - 1 2 3 4 5 6 7 8 9 10 11 1 - Vishay Semiconductors product 2 - Thyristor 3 - Essential part number 4 - 3 = Fast turn-off 5 - C = Ceramic PUK 6 - Voltage code x 100 = VRRM (see Voltage Ratings table) 7 - C = PUK case TO-200AB (A-PUK) 8 - Reapplied dV/dt code (for tq test condition) 9 - tq code 10 - 0 = Eyelet terminals dV/dt - tq combinations available dV/dt (V/µs) 20 50 100 200 400 CK DK EK 20 tq (µs) 25 CJ DJ EJ FJ* CH DH EH FH HH 30 (gate and auxiliary cathode unsoldered leads) * Standard part number. All other types available only on request. 1 = Fast-on terminals (gate and auxiliary cathode unsoldered leads) 2 = Eyelet terminals (gate and auxiliary cathode soldered leads) 3 = Fast-on terminals (gate and auxiliary cathode soldered leads) 11 - Critical dV/dt: None = 500 V/µs (standard value) L = 1000 V/µs (special selection) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95074 Revision: 16-Dec-13 Document Number: 94370 8 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors TO-200AB (A-PUK) DIMENSIONS in millimeters (inches) Anode to gate Creepage distance: 7.62 (0.30) minimum Strike distance: 7.12 (0.28) minimum 19 (0.75) DIA. MAX. 0.3 (0.01) MIN. 13.7/14.4 (0.54/0.57) 0.3 (0.01) MIN. Gate terminal for 1.47 (0.06) DIA. pin receptacle 19 (0.75) DIA. MAX. 38 (1.50) DIA MAX. 2 holes 3.56 (0.14) x 1.83 (0.07) minimum deep 6.5 (0.26) 4.75 (0.19) 25° ± 5° 42 (1.65) MAX. 28 (1.10) Quote between upper and lower pole pieces has to be considered after application of mounting force (see thermal and mechanical specification) Document Number: 95074 Revision: 01-Aug-07 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000