512K x 36 18Mb Register-Register Late Write SRAM

GS8150V36AB-357/333/300/250
119-Bump BGA
Commercial Temp
Industrial Temp
512K x 36
18Mb Register-Register Late Write SRAM
250 MHz–357 MHz
1.8 V VDD
1.5 V or 1.8 V HSTL I/O
Features
Functional Description
• Register-Register Late Write mode, Pipelined Read mode
• 1.8 V +150/–100 mV core power supply
• 1.5 V or 1.8 V HSTL Interface
• ZQ controlled programmable output drivers
• Dual Cycle Deselect
• Fully coherent read and write pipelines
• Byte write operation (9-bit bytes)
• Differential HSTL clock inputs, K and K
• Asynchronous output enable
• Sleep mode via ZZ
• IEEE 1149.1 JTAG-compliant Serial Boundary Scan
• JEDEC-standard 119-bump BGA package
• RoHS-compliant 119-bump BGA package available
Because GS8150V36A is a synchronous device, address data
inputs and read/write control inputs are captured on the rising
edge of the input clock. Write cycles are internally self-timed
and initiated by the rising edge of the clock input. This feature
eliminates complex off-chip write pulse generation required by
asynchronous SRAMs and simplifies input signal timing.
GS8150V36A supports pipelined reads utilizing a rising-edgetriggered output register. It also utilizes a Dual Cycle Deselect
(DCD) output deselect protocol.
GS8150V36A is implemented with high performance HSTL
technology and is packaged in a 119-bump BGA.
Family Overview
Mode Control
GS8150V36A is a 18,874,368-bit (18Mb) high performance
SRAM. This family of wide, very low voltage HSTL I/O
SRAMs is designed to operate at the speeds needed to
implement economical high performance cache systems.
There are two mode control select pins (M1 and M2), which
allow the user to set the correct read protocol for the design.
The GS8150V36A supports single clock Pipeline mode, which
directly affects the two mode control select pins. In order for
the part to fuction correctly, and as specified, M1 must be tied
to VSS and M2 must be tied to VDD or VDDQ. This must be set
at power-up and should not be changed during operation.
Sleep Mode
Low power (Sleep mode) is attained through the assertion (High)
of the ZZ signal, or by stopping the clock (CK). Memory data is
retained during Sleep mode.
Parameter Synopsis
Pipeline
Rev: 1.09 1/2013
-357
-333
-300
-250
Unit
Cycle
tKHQV
2.8
1.4
3.0
1.5
3.3
1.6
4.0
2.0
ns
ns
Curr (x36)
650
600
550
500
mA
1/23
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2003, GSI Technology
GS8150V36AB-357/333/300/250
GS8150V36 Pinout—119-Bump BGA—Top View (Package B)
Rev: 1.09 1/2013
1
2
3
4
5
6
7
A
VDDQ
A
A
NC
A
A
VDDQ
B
NC
A
A
NC
A
A
NC
C
NC
A
A
VDD
A
A
NC
D
DQC
DQC
VSS
ZQ
VSS
DQB
DQB
E
DQC
DQC
VSS
SS
VSS
DQB
DQB
F
VDDQ
DQC
VSS
G
VSS
DQB
VDDQ
G
DQC
DQC
BC
NC
BB
DQB
DQB
H
DQC
DQC
VSS
NC
VSS
DQB
DQB
J
VDDQ
VDD
VREF
VDD
VREF
VDD
VDDQ
K
DQD
DQD
VSS
CK
VSS
DQA
DQA
L
DQD
DQD
BD
CK
BA
DQA
DQA
M
VDDQ
DQD
VSS
SW
VSS
DQA
VDDQ
N
DQD
DQD
VSS
A
VSS
DQA
DQA
P
DQD
DQD
VSS
A
VSS
DQA
DQA
R
NC
A
M1
VDD
M2
A
NC
T
NC
NC
A
A
A
NC
ZZ
U
VDDQ
TMS
TDI
TCK
TDO
NC
VDDQ
2/23
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2003, GSI Technology
GS8150V36AB-357/333/300/250
GS8150V36A BGA Pin Description
Symbol
Type
Description
A
I
Address Inputs
DQA
DQB
DQC
DQD
I/O
Data Input and Output pins
BA , BB , BC , BD
I
Byte Write Enable for DQA, DQB, DQC, DQD I/Os; active low
NC
—
No Connect
CK
I
Clock Input Signal; active high
CK
I
Clock Input Signal; active low
SW
I
Write Enable; active low
G
I
Output Enable; active low
ZZ
I
Sleep mode control; active high
M1
I
Read Operation Protocol Select—Selects Register-Register read operations; must be tied low in this
device
M2
I
Read Operation Protocol Select—Selects Register-Register read operations; must be tied high in this
device
ZQ
I
FLXDrive-II™ Output Impedance Control
SS
I
Synchronous Select Input
TMS
I
Scan Test Mode Select
TDI
I
Scan Test Data In
TDO
O
Scan Test Data Out
TCK
I
Scan Test Clock
VREF
I
Input Reference Voltage
VDD
I
Core power supply
VSS
I
I/O and Core Ground
VDDQ
I
Output driver power supply
Rev: 1.09 1/2013
3/23
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2003, GSI Technology
GS8150V36AB-357/333/300/250
Read Operations
Pipelined Read
A read cycle begins when the RAM captures logic 0 on SS and logic 1 on SW at the rising edge of K (and the falling edge of K).
Address inputs captured on that clock edge are propigated into the RAM, which delivers data to the input of the output registers.
The second rising edge of K fires the output registers and releases read data to the output drivers. If G is held active low, the
drivers drive the data onto the output pins. Read data is sustained on the output pins as long as G is held low or until the next rising
edge of K, at which point the outputs may update to new data or deselect, depending on what control command was registered at
the second rising edge of K.
Dual Cycle Deselect
Chip deselect (SS = logic 1) is pipelined to the same degree as read data. Therefore, a deselect command entered on the rising edge
of K is acted upon in response to the next rising edge of K.
Write Operations
Write operations are initiated when the write enable input signal (SW) and chip select (SS) are captured at logic 0 on a rising edge
of the K clock (and falling edge of the K clock).
Late Write
In Late Write mode the RAM requires Data In one rising clock edge later than the edge used to load Address and Control. Late
Write protocol has been employed on SRAMs designed for RISC processor L2 cache applications and in Flow Through mode NBT
SRAMs.
Byte Write Control
The Byte Write Enable inputs (Bx) determine which bytes will be written. Any combination of Byte Write Enable control pins,
including all or none, may be activated. A Write Cycle with no Byte Write inputs active is a write abort cycle. Byte write control
inputs are captured by the same clock edge used to capture SW.
Example of x36 Byte Write Truth Table
Function
SW
Ba
Bb
Bc
Bd
Read
H
X
X
X
X
Write Byte A
L
L
H
H
H
Write Byte B
L
H
L
H
H
Write Byte C
L
H
H
L
H
Write Byte D
L
H
H
H
L
Write all Bytes
L
L
L
L
L
Write Abort
L
H
H
H
H
FLXDrive-II™ HSTL Output Driver Impedance Control
HSTL I/O SigmaRAMs are supplied with programmable impedance output drivers. The ZQ pin must be connected to VSS via an
external resistor, RQ, to allow the SRAM to monitor and adjust its output driver impedance. The value of RQ must be 5X the value
of the desired SRAM driver impedance. The allowable range of RQ to guarantee impedance matching with specified tolerance is
between 150Ω and 300Ω. Periodic readjustment of the output driver impedance occurs automatically because driver impedance is
affected by drifts in supply voltage and die temperature. A clock cycle counter periodically triggers an impedance evaluation,
resets and counts again. Each impedance evaluation may move the output driver impedance level one step at a time towards the
optimum level. The output driver is implemented with discrete binary weighted impedance steps. The SRAM requires 32K start-up
clock cycles, selected or deselected, after VDD reaches its operating range to reach its programmed output driver impedance.
Rev: 1.09 1/2013
4/23
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2003, GSI Technology
GS8150V36AB-357/333/300/250
Register-Register Late Write, Pipelined Read Truth Table
CK
ZZ
SS
SW
Bx
G
Current Operation
DQ
(tn)
DQ
(tn+1)
X
1
X
X
X
X
Sleep (Power Down) mode
Hi-Z
Hi-Z
↑
0
1
X
X
X
Deselect
***
Hi-Z
↑
0
0
1
X
1
Read
Hi-Z/
Hi-Z
↑
0
0
1
X
0
Read
***
Q(tn)
↑
0
0
0
0
X
Write All Bytes
***
D(tn)
↑
0
0
0
X
X
Write Bytes with Bx = 0
***
D(tn)
↑
0
0
0
1
X
Write (Abort)
***
Hi-Z
Notes:
1. If one or more Bx = 0, then B = “T” else B = “F”.
2. “1” = input “high”; “0” = input “low”; “X” = input “don’t care”.
3. “***” indicates that the DQ input requirement/output state and CQ output state are determined by the previous operation.
4. DQs are tristated in response to Bank Deselect, Deselect, and Write commands, one full cycle after the command is sampled.
5. CQs are tristated in response to Bank Deselect commands only, one full cycle after the command is sampled.
6. Up to three (3) Continue operations may be initiated after a Read or Write operation is initiated to burst transfer up to four (4) distinct pieces
of data per single external address input. If a fourth (4th) Continue operation is initiated, the internal address wraps back to the initial external (base) address.
Rev: 1.09 1/2013
5/23
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2003, GSI Technology
GS8150V36AB-357/333/300/250
Absolute Maximum Ratings
(All voltages reference to VSS)
Symbol
Description
Value
Unit
VDD
Voltage on VDD Pins
–0.5 to 2.5
V
VDDQ
Voltage in VDDQ Pins
–0.5 to 2.4
V
VI/O
Voltage on I/O Pins
–0.5 to VDDQ + 0.5 (≤ 2.5 V max.)
V
VIN
Voltage on Other Input Pins
–0.5 to VDDQ + 0.5 (≤ 2.5 V max.)
V
IIN
Input Current on Any Pin
+/–100
mA dc
IOUT
Output Current on Any I/O Pin
+/–100
mA dc
TJ
Maximum Junction Temperature
125
oC
TSTG
Storage Temperature
–55 to 125
ºC
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Recommended Operating Conditions, for an extended period of time, may affect
reliability of this component.
Recommended Operating Conditions
Power Supplies
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
Supply Voltage
VDD
1.7
1.8
1.95
V
1.8 V I/O Supply Voltage
VDDQ
1.7
1.8
1.95
V
1
1.5 V I/O Supply Voltage
VDDQ
1.4
1.5
1.6
V
1
Ambient Temperature
(Commercial Range Versions)
TA
0
25
70
°C
Ambient Temperature
(Industrial Range Versions)
TA
–40
25
85
°C
2
Note:
1. Unless otherwise noted, all performance specifications quoted are evaluated for worst case at both 1.4 V ≤ VDDQ ≤ 1.6 V (i.e., 1.5 V I/O)
and 1.7 V ≤ VDDQ ≤ 1.95 V (i.e., 1.8 V I/O) and quoted at whichever condition is worst case.
2. The part number of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications
quoted are evaluated for worst case in the temperature range marked on the device.
Rev: 1.09 1/2013
6/23
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2003, GSI Technology
GS8150V36AB-357/333/300/250
HSTL I/O DC Input Characteristics
Parameter
Symbol
Min
Typ
Max
Units
Notes
DC Input Logic High
VIH (dc)
VREF + 100
—
VDDQ + 300
mV
DC Input Logic Low
VIL (dc)
–300
—
VREF – 100
mV
DC Clock Input Differential Voltage
VDIF (dc)
100
—
VDDQ + 300
mV
2
VREF DC Voltage
VREF (dc)
VDDQ /2 – 0.1
—
VDDQ /2 + 0.1
V
1
Clock Input Voltag
VCK (dc)
–300
—
VDDQ + 300
V
Clock Input Commone Mode Voltage
VCM (dc)
600
750
900
V
Notes:
1. The peak to peak AC component superimposed on VREF may not exceed 5% of the DC component of VREF.
2. SRAM performance is a function of clock input differential voltage (VDIF).
3. To guarantee AC characteristics, VIH,VIL,Trise and Tfall of inputs and clocks must be within 10% of each other.
4. For devices supplied with HSTL I/O input buffers.Compatible with both 1.8 V and 1.5 V I/O drivers.
5. See AC Input Definition drawing below.
HSTL I/O AC Input Characteristics
Parameter
Symbol
Min
Max
Units
Notes
AC Input Logic High
VIH (ac)
VREF + 200
—
mV
3,4
AC Input Logic Low
VIL (ac)
—
VREF – 200
mV
3,4
AC Clock Input Differential Voltage
VDIF (ac)
800
—
mV
2,3
VREF Peak to Peak AC Voltage
VREF (ac)
—
5% VREF (DC)
mV
1
Notes:
1. The peak to peak AC component superimposed on VREF may not exceed 5% of the DC component of VREF.
2. SRAM performance is a function of clock input differential voltage (VDIF). The RAM can be operated with a single ended clocking with
either CK or CK tied to VREF.
3. To guarantee AC characteristics, VIH,VIL,Trise and Tfall of inputs and clocks must be within 10% of each other.
4. For devices supplied with HSTL I/O input buffers.Compatible with both 1.8 V and 1.5 V I/O drivers.
5. See AC Input Definition drawing below.
Rev: 1.09 1/2013
7/23
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2003, GSI Technology
GS8150V36AB-357/333/300/250
HSTL I/O AC Input Definitions
VDDQ
VIH (AC)
VIH (DC)
VREF
VIL (DC)
VIH (AC)
VSS
Differential Voltage and Common Mode Voltage
Common Mode and Differential Voltage
1.8
1.6
1.4
1.2
1
0.8
0.6
VCM
0.4
K
K#
VCM
VDIF
Volts
0.2
0
-0.2
-0.4
-0.6
-0.8
-1
-1.2
-1.4
-1.6
-1.8
0
20
40
60
80
100
120
Time
Rev: 1.09 1/2013
8/23
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2003, GSI Technology
GS8150V36AB-357/333/300/250
Undershoot Measurement and Timing
Overshoot Measurement and Timing
VIH
20% tKC
VDD + 1.0 V
VSS
50%
50%
VDD
VSS – 1.0 V
20% tKC
VIL
Capacitance
(TA = 25oC, f = 1 MHZ, VDD = 1.8 V)
Parameter
Symbol
Test conditions
Max.
Unit
Input Capacitance
CIN
VIN = 0 V
4
pF
Output Capacitance
COUT
VOUT = 0 V
5
pF
Output Capacitance (Clock)
CIN(CK)
VIN = 0 V
5
pF
Note:
This parameter is sample tested.
AC Test Conditions
Rev: 1.09 1/2013
Parameter
Conditions
Input high level
1.25 V
Input low level
0.25 V
Input rise/fall time (10% to 90%)
0.5 ns/0.5 ns
Input reference level
VDDQ/2
Clock input reference level
Differential cross point
Output reference level
VDDQ/2
Clock (VDIF)
0.75 V
Clock (VCM)
0.75 V
VDDQ
1.5 V
RQ
250Ω
9/23
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2003, GSI Technology
GS8150V36AB-357/333/300/250
AC Test Load Diagram
50Ω
VDDQ/2
50Ω
Device Under Test
VDDQ = 1.5 V
5pF
25Ω
DQ
VDDQ/2
50Ω
ZQ
50Ω
VDDQ/2
5pF
RQ = 250Ω
Input and Output Leakage Characteristics
Parameter
Symbol
Test Conditions
Min.
Max
Notes
Input Leakage Current
(except mode pins)
IIL
VIN = 0 to VDDQ
–2 uA
2 uA
—
ZQ, MCH, MCL, EP2, EP3
Pin Input Current
IINM
VIN = 0 to VDDQ
–50 uA
50 uA
—
Output Leakage Current
IOL
Output Disable,
VOUT = 0 to VDDQ
–2 uA
2 uA
—
Operating Currents
-357
Parameter
Config.
Operating
Current
HSTL
Deselect
Current
Rev: 1.09 1/2013
x36
—
Symbol
IDD
IDD3
0°C
to
70°C
650 mA
150 mA
–40°C
to
+85°C
660 mA
160 mA
-333
0°C
to
70°C
600 mA
150 mA
–40°C
to
+85°C
610 mA
160 mA
-300
0°C
to
70°C
550 mA
150 mA
–40°C
to
+85°C
560 mA
160 mA
-250
0°C
to
70°C
500 mA
150 mA
10/23
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
–40°C
to
+85°C
Test Conditions
510 mA
SS ≤ VIL Max.
tKHKH ≥ tKHKH Min.
All other inputs
VIL ≥ VIN ≥ VIH
160 mA
Device Deselected
All inputs
VSS + 0.10 V
≥ VIN ≥
VDD – 0.10 V
© 2003, GSI Technology
GS8150V36AB-357/333/300/250
AC Electrical Characteristics
Parameter
Symbol
Clock Cycle Time
-357
-333
-300
-250
Unit
Notes
—
ns
—
1.5
—
ns
—
—
1.5
—
ns
—
—
0.5
—
ns
1
1.6
—
2.0
ns
—
—
0.5
—
ns
—
1.6
—
2.0
ns
1
0.7
—
0.8
—
ns
—
—
0.4
—
0.5
—
ns
—
0.6
—
0.7
—
0.8
—
ns
—
—
0.4
—
0.4
—
0.5
—
ns
—
0.5
—
0.6
—
0.7
—
0.8
—
ns
—
tKHWX
0.4
—
0.4
—
0.4
—
0.5
—
ns
—
Byte Write Valid to Clock High
tBVKH
0.5
—
0.6
—
0.7
—
0.8
—
ns
—
Clock High to Byte Write Don’t Care
tKHBX
0.4
—
0.4
—
0.4
—
0.5
—
ns
—
Data In Valid to Clock High
tDVKH
0.5
—
0.5
—
0.5
—
0.5
—
ns
—
Clock High to Data In Don’t Care
tKHDX
0.4
—
0.4
—
0.4
—
0.5
—
ns
—
Output Enable Low to Output Data Valid
tGLQV
—
1.4
—
1.5
1.6
—
2.0
ns
—
Output Enable Low to Output Data Low-Z
tGLQX
0
—
0
—
—
0
—
ns
—
Output Enable High to Output Data High-Z
tGHQZ
—
1.4
—
1.5
1.6
—
2.0
ns
—
Sleep Mode Enable Time
tZZE
—
15
—
15
—
15
—
15
ns
—
Sleep Mode Recovery Time
tZZR
20
—
20
—
20
—
20
—
ns
—
Min
Max
Min
Max
Min
Max
Min
Max
tKHKH
2.8
—
3.0
—
3.3
—
4.0
Clock High Time
tKHKL
1.1
—
1.2
—
1.3
—
Clock Low Time
tKLKH
1.1
—
1.2
—
1.3
Clock High to Output Low-Z
tKHQX1
0.5
—
0.5
—
0.5
Clock High to Output Valid
tKHQV
—
1.4
—
1.5
Clock High to Output Invalid
tKHQX
0.5
—
0.5
—
Clock High to Output High-Z
tKHQZ
—
1.4
—
1.5
Address Valid to Clock High
tAVKH
0.5
—
0.6
—
Clock High to Address Don’t Care
tKHAX
0.4
—
0.4
Enable Valid to Clock High
tEVKH
0.5
—
Clock High to Enable Don’t Care
tKHEX
0.4
Write Valid to Clock High
tWVKH
Clock High to Write Don’t Care
0.5
0
Notes:
1. Measured at 100 mV from steady state. Not 100% tested.
2. Guaranteed by design. Not 100% tested.
Rev: 1.09 1/2013
11/23
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2003, GSI Technology
GS8150V36AB-357/333/300/250
G Controlled Read-Write
Read A1
Read A2
Read A0
Write A3
Write A4
Read A5
Read A4
Read A6
Read A7
KHKL
KHKH
KLKH
K
tAVKH
tKHAX
A
A1
A2
A0
A3
A4
A5
A4
A6
A7
G
tWVKH
tKHWX
SW
tWVKH
tKHWX
BWx
KHQX
GLQV
GLQX
DQn
Q1
DVKH
KHDX
GHQZ
Q2
D3
KHQV
KHQX1
D4
Q5
Q4
Q6
Note:
K is not shown; assumes K tied to VREF or out of phase with K
SS Controlled Read-Write
Read A1
Read A2
Deselect
Write A3
Write A4
Read A5
Read A4
Read A6
Read A7
KHKL
KHKH
KLKH
K
tAVKH
tKHAX
A
A1
A2
A3
A4
A5
A4
A6
A7
tEVKH
tKHEX
SS
tWVKH
tKHWX
SW
tBVKH
tKHBX
BWx
KHQZ
KHQX1
DQn
Q1
tDVKH
tKHDX
KHQV
Q2
D3
D4
KHQX
Q5
Q4
Note:
K is not shown; assumes K tied to VREF or out of phase with K
Rev: 1.09 1/2013
12/23
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2003, GSI Technology
GS8150V36AB-357/333/300/250
ZZ Timing
Read A1
Read A2
Deselect
Clock is a Don't care during Sleep ModeRead A1
Read A2
Read A3
KHKL
KHKH
KLKH
K
tAVKH
tKHAX
A
A1
A2
A1
A2
A3
tEVKH
tKHEX
SS
tWVKH
tKHWX
SW
SWx
Begin ISB
ZZR
ZZ
ZZE
KHQX
KHQX1
DQn
Q1
KHQV
Q2
Q1
Note:
K is not shown; assumes K tied to VREF or out of phase with K
JTAG Port Operation
Overview
The JTAG Port on this RAM operates in a manner that is compliant with IEEE Standard 1149.1-1990, a serial boundary scan
interface standard (commonly referred to as JTAG). The JTAG Port input interface levels scale with VDD. The JTAG output
drivers are powered by VDDQ.
Disabling the JTAG Port
It is possible to use this device without utilizing the JTAG port. The port is reset at power-up and will remain inactive unless
clocked. TCK, TDI, and TMS are designed with internal pull-up circuits.To assure normal operation of the RAM with the JTAG
Port unused, TCK, TDI, and TMS may be left floating or tied to either VDD or VSS. TDO should be left unconnected.
Rev: 1.09 1/2013
13/23
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2003, GSI Technology
GS8150V36AB-357/333/300/250
JTAG Port Registers
JTAG Pin Descriptions
Pin
Pin Name
I/O
Description
TCK
Test Clock
In
Clocks all TAP events. All inputs are captured on the rising edge of TCK and all outputs propagate
from the falling edge of TCK.
TMS
Test Mode Select
In
The TMS input is sampled on the rising edge of TCK. This is the command input for the TAP
controller state machine. An undriven TMS input will produce the same result as a logic one input
level.
In
The TDI input is sampled on the rising edge of TCK. This is the input side of the serial registers
placed between TDI and TDO. The register placed between TDI and TDO is determined by the
state of the TAP Controller state machine and the instruction that is currently loaded in the TAP
Instruction Register (refer to the TAP Controller State Diagram). An undriven TDI pin will produce
the same result as a logic one input level.
TDI
Test Data In
TDO
Test Data Out
Output that is active depending on the state of the TAP state machine. Output changes in
Out response to the falling edge of TCK. This is the output side of the serial registers placed between
TDI and TDO.
Note:
This device does not have a TRST (TAP Reset) pin. TRST is optional in IEEE 1149.1. The Test-Logic-Reset state is entered while TMS is
held high for five rising edges of TCK. The TAP Controller is also reset automaticly at power-up.
Overview
The various JTAG registers, refered to as Test Access Port orTAP Registers, are selected (one at a time) via the sequences of 1s
and 0s applied to TMS as TCK is strobed. Each of the TAP Registers is a serial shift register that captures serial input data on the
rising edge of TCK and pushes serial data out on the next falling edge of TCK. When a register is selected, it is placed between the
TDI and TDO pins.
Instruction Register
The Instruction Register holds the instructions that are executed by the TAP controller when it is moved into the Run, Test/Idle, or
the various data register states. Instructions are 3 bits long. The Instruction Register can be loaded when it is placed between the
TDI and TDO pins. The Instruction Register is automatically preloaded with the IDCODE instruction at power-up or whenever the
controller is placed in Test-Logic-Reset state.
Bypass Register
The Bypass Register is a single bit register that can be placed between TDI and TDO. It allows serial test data to be passed through
the RAM’s JTAG Port to another device in the scan chain with as little delay as possible.
Boundary Scan Register
The Boundary Scan Register is a collection of flip flops that can be preset by the logic level found on the RAM’s input or I/O pins.
The flip flops are then daisy chained together so the levels found can be shifted serially out of the JTAG Port’s TDO pin. The
Boundary Scan Register also includes a number of place holder flip flops (always set to a logic 1). The relationship between the
device pins and the bits in the Boundary Scan Register is described in the Scan Order Table following. The Boundary Scan
Register, under the control of the TAP Controller, is loaded with the contents of the RAMs I/O ring when the controller is in
Capture-DR state and then is placed between the TDI and TDO pins when the controller is moved to Shift-DR state. SAMPLE-Z,
SAMPLE/PRELOAD and EXTEST instructions can be used to activate the Boundary Scan Register.
Rev: 1.09 1/2013
14/23
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2003, GSI Technology
GS8150V36AB-357/333/300/250
JTAG TAP Block Diagram
·
·
·
·
·
·
·
·
Boundary Scan Register
·
·
0
Bypass Register
0
108
1
·
2 1 0
Instruction Register
TDI
TDO
ID Code Register
31 30 29
·
· ··
2 1 0
Control Signals
TMS
TCK
Test Access Port (TAP) Controller
Identification (ID) Register
The ID Register is a 32-bit register that is loaded with a device and vendor specific 32-bit code when the controller is put in
Capture-DR state with the IDCODE command loaded in the Instruction Register. The code is loaded from a 32-bit on-chip ROM.
It describes various attributes of the RAM as indicated below. The register is then placed between the TDI and TDO pins when the
controller is moved into Shift-DR state. Bit 0 in the register is the LSB and the first to reach TDO when shifting begins.
Rev: 1.09 1/2013
15/23
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2003, GSI Technology
GS8150V36AB-357/333/300/250
Die
Revision
Code
GSI Technology
JEDEC Vendor
ID Code
I/O
Configuration
Not Used
Presence Register
Tap Controller Instruction Set
ID Register Contents
Bit #
31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1
0
x36
X
X
X
X
0
0
0
X
1
0
0
1
0
0
0
0
1
0
0
0
0
0 0 1 1 0 1 1 0 0 1
1
x18
X
X
X
X
0
0
0
X
1
0
0
1
0
0
0
0
1
0
1
0
0
0 0 1 1 0 1 1 0 0 1
1
Overview
There are two classes of instructions defined in the Standard 1149.1-1990; the standard (Public) instructions, and device specific
(Private) instructions. Some Public instructions are mandatory for 1149.1 compliance. Optional Public instructions must be
implemented in prescribed ways. The TAP on this device may be used to monitor all input and I/O pads, and can be used to load
address, data or control signals into the RAM or to preload the I/O buffers.
When the TAP controller is placed in Capture-IR state the two least significant bits of the instruction register are loaded with 01.
When the controller is moved to the Shift-IR state the Instruction Register is placed between TDI and TDO. In this state the desired
instruction is serially loaded through the TDI input (while the previous contents are shifted out at TDO). For all instructions, the
TAP executes newly loaded instructions only when the controller is moved to Update-IR state. The TAP instruction set for this
device is listed in the following table.
Rev: 1.09 1/2013
16/23
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© 2003, GSI Technology
GS8150V36AB-357/333/300/250
JTAG Tap Controller State Diagram
1
0
Test Logic Reset
0
Run Test Idle
1
Select DR
1
Select IR
0
0
1
1
Capture DR
Capture IR
0
0
Shift DR
1
1
Shift IR
0
1
1
Exit1 DR
0
Exit1 IR
0
0
Pause DR
1
Exit2 DR
1
Update DR
1
1
0
0
Pause IR
1
Exit2 IR
0
1
0
0
Update IR
1
0
Instruction Descriptions
BYPASS
When the BYPASS instruction is loaded in the Instruction Register the Bypass Register is placed between TDI and TDO. This
occurs when the TAP controller is moved to the Shift-DR state. This allows the board level scan path to be shortened to facilitate testing of other devices in the scan path.
SAMPLE/PRELOAD
SAMPLE/PRELOAD is a Standard 1149.1 mandatory public instruction. When the SAMPLE / PRELOAD instruction is
loaded in the Instruction Register, moving the TAP controller into the Capture-DR state loads the data in the RAMs input and
I/O buffers into the Boundary Scan Register. Boundary Scan Register locations are not associated with an input or I/O pin, and
are loaded with the default state identified in the Boundary Scan Chain table at the end of this section of the datasheet. Because
the RAM clock is independent from the TAP Clock (TCK) it is possible for the TAP to attempt to capture the I/O ring contents
while the input buffers are in transition (i.e. in a metastable state). Although allowing the TAP to sample metastable inputs will
not harm the device, repeatable results cannot be expected. RAM input signals must be stabilized for long enough to meet the
TAPs input data capture set-up plus hold time (tTS plus tTH). The RAMs clock inputs need not be paused for any other TAP
operation except capturing the I/O ring contents into the Boundary Scan Register. Moving the controller to Shift-DR state then
places the boundary scan register between the TDI and TDO pins.
EXTEST
EXTEST is an IEEE 1149.1 mandatory public instruction. It is to be executed whenever the instruction register is loaded with
all logic 0s. The EXTEST command does not block or override the RAM’s input pins; therefore, the RAM’s internal state is
still determined by its input pins.
Rev: 1.09 1/2013
17/23
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2003, GSI Technology
GS8150V36AB-357/333/300/250
Typically, the Boundary Scan Register is loaded with the desired pattern of data with the SAMPLE/PRELOAD command.
Then the EXTEST command is used to output the Boundary Scan Register’s contents, in parallel, on the RAM’s data output
drivers on the falling edge of TCK when the controller is in the Update-IR state.
Alternately, the Boundary Scan Register may be loaded in parallel using the EXTEST command. When the EXTEST instruction is selected, the sate of all the RAM’s input and I/O pins, as well as the default values at Scan Register locations not associated with a pin, are transferred in parallel into the Boundary Scan Register on the rising edge of TCK in the Capture-DR
state, the RAM’s output pins drive out the value of the Boundary Scan Register location with which each output pin is associated.
IDCODE
The IDCODE instruction causes the ID ROM to be loaded into the ID register when the controller is in Capture-DR mode and
places the ID register between the TDI and TDO pins in Shift-DR mode. The IDCODE instruction is the default instruction
loaded in at power up and any time the controller is placed in the Test-Logic-Reset state.
SAMPLE-Z
If the SAMPLE-Z instruction is loaded in the instruction register, all RAM outputs are forced to an inactive drive state (highZ) and the Boundary Scan Register is connected between TDI and TDO when the TAP controller is moved to the Shift-DR
state.
RFU
These instructions are Reserved for Future Use. In this device they replicate the BYPASS instruction.
Rev: 1.09 1/2013
18/23
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2003, GSI Technology
GS8150V36AB-357/333/300/250
JTAG Port AC Test Conditions
Parameter
Conditions
Input high level
VDD – 0.2 V
Input low level
0.2 V
Input slew rate
1 V/ns
Input reference level
VDDQ/2
Output reference level
VDDQ/2
JTAG Port AC Test Load
DQ
50Ω
30pF*
VDDQ/2
* Distributed Test Jig Capacitance
Notes:
1. Include scope and jig capacitance.
2. Test conditions as shown unless otherwise noted.
JTAG TAP Instruction Set Summary
Instruction
Code
Description
Notes
EXTEST
000
Places the Boundary Scan Register between TDI and TDO.
1
IDCODE
001
Preloads ID Register and places it between TDI and TDO.
1, 2
SAMPLE-Z
010
Captures I/O ring contents. Places the Boundary Scan Register between TDI and
TDO.
Forces all RAM output drivers to High-Z.
1
RFU
011
Do not use this instruction; Reserved for Future Use.
Replicates BYPASS instruction. Places Bypass Register between TDI and TDO.
1
SAMPLE/
PRELOAD
100
Captures I/O ring contents. Places the Boundary Scan Register between TDI and
TDO.
1
GSI
101
GSI private instruction.
1
RFU
110
Do not use this instruction; Reserved for Future Use.
Replicates BYPASS instruction. Places Bypass Register between TDI and TDO.
1
BYPASS
111
Places Bypass Register between TDI and TDO.
1
Notes:
1. Instruction codes expressed in binary, MSB on left, LSB on right.
2. Default instruction automatically loaded at power-up and in test-logic-reset state.
Rev: 1.09 1/2013
19/23
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2003, GSI Technology
GS8150V36AB-357/333/300/250
JTAG Port Timing Diagram
tTKC
tTKH
tTKL
TCK
tTH
tTS
TDI
tTH
tTS
TMS
tTKQ
TDO
tTH
tTS
Parallel SRAM input
JTAG Port AC Electrical Characteristics
Parameter
Symbol
Min
Max
Unit
TCK Cycle Time
tTKC
50
—
ns
TCK Low to TDO Valid
tTKQ
—
20
ns
TCK High Pulse Width
tTKH
20
—
ns
TCK Low Pulse Width
tTKL
20
—
ns
TDI & TMS Set Up Time
tTS
10
—
ns
TDI & TMS Hold Time
tTH
10
—
ns
Rev: 1.09 1/2013
20/23
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2003, GSI Technology
GS8150V36AB-357/333/300/250
Package Dimensions—119-Bump FPBGA (Package B, Variation 2)
TOP VIEW
A1
1
2
3
4
5
6
BOTTOM VIEW
A1
Ø0.10S C
Ø0.30S C AS B S
Ø0.60~0.90 (119x)
7
7 6 5 4 3 2 1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
U
20.32
22±0.10
1.27
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
U
B
1.27
0.15 C
7.62
Rev: 1.09 1/2013
14±0.10
0.50~0.70
1.86.±0.13
SEATING PLANE
C
A
0.20(4x)
21/23
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2003, GSI Technology
GS8150V36AB-357/333/300/250
Ordering Information
Org
Part Number1
Type
Speed
(MHz)
TA2
512K x 36
GS8150V36AB-357
Register-Register Late Write SRAM
357MHz
C
512K x 36
GS8150V36AB-333
Register-Register Late Write SRAM
333 MHz
C
512K x 36
GS8150V36AB-300
Register-Register Late Write SRAM
300 MHz
C
512K x 36
GS8150V36AB-250
Register-Register Late Write SRAM
250 MHz
C
512K x 36
GS8150V36AB-357I
Register-Register Late Write SRAM
357 MHz
I
512K x 36
GS8150V36AB-333I
Register-Register Late Write SRAM
333 MHz
I
512K x 36
GS8150V36AB-300I
Register-Register Late Write SRAM
300 MHz
I
512K x 36
GS8150V36AB-250I
Register-Register Late Write SRAM
250 MHz
I
512K x 36
GS8150V36AGB-357
RoHS-compliant Register-Register Late Write SRAM
357MHz
C
512K x 36
GS8150V36AGB-333
RoHS-compliant Register-Register Late Write SRAM
333 MHz
C
512K x 36
GS8150V36AGB-300
RoHS-compliant Register-Register Late Write SRAM
300 MHz
C
512K x 36
GS8150V36AGB-250
RoHS-compliant Register-Register Late Write SRAM
250 MHz
C
512K x 36
GS8150V36AGB-357I
RoHS-compliant Register-Register Late Write SRAM
357 MHz
I
512K x 36
GS8150V36AGB-333I
RoHS-compliant Register-Register Late Write SRAM
333 MHz
I
512K x 36
GS8150V36AGB-300I
RoHS-compliant Register-Register Late Write SRAM
300 MHz
I
512K x 36
GS8150V36AGB-250I
RoHS-compliant Register-Register Late Write SRAM
250 MHz
I
Notes:
1. Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. Example: GS8150V36AB-300T.
2. C = Commercial Temperature Range. I = Industrial Temperature Range.
Rev: 1.09 1/2013
22/23
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2003, GSI Technology
GS8150V36AB-357/333/300/250
18Mb Sync SRAM Datasheet Revision History
DS/DateRev. Code: Old;
New
Types of Changes
Format or Content
Page;Revisions;Reason
• Creation of new datasheet
8150VxxA_r1
8150VxxA_r1;
8150VxxA_r1_01
Content/Format
• Corrected L3 from VSS to NC
• Updated entire format
• Placed corrected BGA diagram in document
8150VxxA_r1_01;
8150VxxA_r1_02
Content/Format
• Updated format
• Added variation information to 119 BGA mechanical drawing
8150VxxA_r1_02;
8150VxxA_r1_03
Content
8150VxxA_r1_03;
8150VxxA_r1_04
Content
8150VxxA_r1_04;
8150VxxA_r1_05
Content
8150VxxA_r1_05;
8150VxxA_r1_06
Content
8150VxxA_r1_06;
8150VxxA_r1_07
Content
8150VxxA_r1_07;
8150VxxA_r1_08
Content
8150VxxA_r1_08;
8150VxxA_r1_08
Content
Rev: 1.09 1/2013
• Updated AC Characteristics table
• Updated /G Controlled Read-Write timing diagram
• Pb-free information added
• Changed VDD to max 3.6 V for 8150xxA
• Updated Abs Max section
• Changed all Pb-free references to RoHS-compliant
• Updated Power Supplies table on page 7
• Updated for MP status
• Removed x18 configuration
23/23
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2003, GSI Technology