AOT2502L/AOB2502L

AOT2502L/AOB2502L
150V N-Channel MOSFET
General Description
Product Summary
VDS
• Trench Power MV MOSFET technology
• Low RDS(ON)
• Low Gate Charge
• Optimized for fast-switching applications
Applications
ID (at VGS=10V)
150V
106A
RDS(ON) (at VGS=10V)
< 11mΩ (10.7mΩ*)
100% UIS Tested
100% Rg Tested
• Synchronous Rectification in DC/DC and AC/DC Converters
• Industrial and Motor Drive applications
TO-220
TO-263
D2PAK
Top View
D
Bottom View
Top View
Bottom View
D
D
D
D
G
G
D
S
S
D
G
G
S
G
AOB2502L
AOT2502L
S
S
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AOT2502L
AOB2502L
TO-220
TO-263
Tube
Tape & Reel
1000
800
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Symbol
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
C
Avalanche energy
VDS Spike
Power Dissipation B
L=0.3mH
C
10µs
TC=25°C
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
A
Maximum Junction-to-Ambient
AD
Maximum Junction-to-Ambient
Maximum Junction-to-Case
IAS
40
A
EAS
240
mJ
VSPIKE
180
V
277
Steady-State
Steady-State
W
111
8.3
W
5.3
TJ, TSTG
Symbol
t ≤ 10s
A
14.5
PDSM
TA=70°C
A
18.5
PD
TC=100°C
V
250
IDSM
TA=70°C
±20
67
IDM
TA=25°C
Continuous Drain
Current
Units
V
106
ID
TC=100°C
C
Maximum
150
RθJA
RθJC
-55 to 150
Typ
12
50
0.35
°C
Max
15
60
0.45
Units
°C/W
°C/W
°C/W
* Surface mount package TO-263
Rev.1.0: December 2014
www.aosmd.com
Page 1 of 6
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
150
Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS, ID=250µA
TJ=55°C
TO-220
VGS=10V, ID=20A
3.5
TJ=125°C
±100
nA
4.3
5.1
V
9.2
11
17.8
21.5
8.9
10.7
mΩ
1
V
106
A
gFS
Forward Transconductance
VDS=5V, ID=20A
50
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=75V, f=1MHz
Gate Source Charge
Qgd
tD(on)
VGS=10V, VDS=75V, ID=20A
1
mΩ
S
3010
pF
345
pF
14
f=1MHz
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
Qgs
µA
5
TO-263
Coss
Units
1
VGS=10V, ID=20A
Static Drain-Source On-Resistance
Max
V
VDS=150V, VGS=0V
IDSS
RDS(ON)
Typ
pF
2
3
Ω
43
60
nC
18
nC
Gate Drain Charge
10
nC
Turn-On DelayTime
19
ns
24
ns
30
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Qrr
VGS=10V, VDS=75V, RL=3.75Ω,
RGEN=3Ω
8.5
ns
IF=20A, dI/dt=500A/µs
75
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
880
ns
nC
Body Diode Reverse Recovery Time
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: December 2014
www.aosmd.com
Page 2 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
10V
100
8V
VDS=5V
80
80
7V
60
ID(A)
ID (A)
60
40
125°C
40
6.5V
20
20
25°C
VGS=6V
0
0
0
1
2
3
4
3
5
4
6
7
8
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Figure 1: On-Region Characteristics (Note E)
14
2.4
2.2
Normalized On-Resistance
12
RDS(ON) (mΩ)
5
10
8
VGS=10V
6
4
2
VGS=10V
ID=20A
1.8
1.6
1.4
1.2
1
0.8
2
0
5
10
15
20
25
0
30
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
1.0E+02
ID=20A
1.0E+01
1.0E+00
IS (A)
RDS(ON) (mΩ)
20
125°C
15
125°C
1.0E-01
25°C
1.0E-02
1.0E-03
10
1.0E-04
25°C
5
1.0E-05
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.1.0: December 2014
www.aosmd.com
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
7000
VDS=75V
ID=20A
6000
Capacitance (pF)
VGS (Volts)
8
6
4
5000
4000
Ciss
3000
2000
2
1000
0
Crss
0
0
10
20
30
40
50
0
25
Qg (nC)
Figure 7: Gate-Charge Characteristics
75
100
125
150
1000
TJ(Max)=150°C
TC=25°C
10µs
10µs
RDS(ON)
limited
800
100µs
10.0
Power (W)
ID (Amps)
100.0
50
VDS (Volts)
Figure 8: Capacitance Characteristics
1000.0
1ms
10ms
DC
1.0
TJ(Max)=150°C
TC=25°C
0.1
0.0
0.01
0.1
600
400
200
1
10
VDS (Volts)
100
1000
0
0.0001 0.001 0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
VGS> or equal to 10V
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
ZθJC Normalized Transient
Thermal Resistance
Coss
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.45°C/W
1
0.1
PDM
Single Pulse
Ton
T
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: December 2014
www.aosmd.com
Page 4 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
400
Current rating ID(A)
Power Dissipation (W)
100
300
200
100
80
60
40
20
0
0
0
25
50
75
100
125
TCASE (°C)
Figure 12: Power De-rating (Note F)
0
150
25
50
75
100
125
150
TCASE (°C)
Figure 13: Current De-rating (Note F)
1000
TA=25°C
Power (W)
100
10
1
0.001
0.01
0.1
1
10
100
1000
ZθJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Ton
Single Pulse
0.001
0.0001
0.001
0.01
0.1
1
10
T
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.1.0: December 2014
www.aosmd.com
Page 5 of 6
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
90%
+ Vdd
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev.1.0: December 2014
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
www.aosmd.com
Page 6 of 6