AO4912 - Alpha & Omega Semiconductor

AO4912
Asymmetric Dual N-Channel Enhancement Mode Field Effect
Transistor
General Description
Features
Q1
The AO4912 uses advanced trench technology to
provide excellent R DS(ON) and low gate charge. The two
MOSFETs make a compact and efficient switch and
synchronous rectifier combination for use in DC-DC
converters. A Schottky diode is co-packaged in parallel
with the synchronous MOSFET to boost efficiency
further. Standard Product AO4912 is Pb-free (meets
ROHS & Sony 259 specifications).
Q2
VDS (V) = 30V
ID = 8.5A
RDS(ON) < 17mΩ
RDS(ON) < 25mΩ
VDS(V) = 30V
ID=7A
(VGS = 10V)
<26mΩ
(VGS = 10V)
<31mΩ
(VGS = 4.5V)
SCHOTTKY
VDS (V) = 30V, IF = 3A, VF<[email protected]
UIS TESTED!
Rg,Ciss,Coss,Crss Tested
D1
D2
D2
G1
S1/A
1
2
3
4
8
7
6
5
K
G2
D1/S2/K
D1/S2/K
D1/S2/K
TA=25°C
TA=70°C
B
TA=25°C
B
V
ID
7
6.4
A
IDM
40
30
2
2
1.28
1.28
17
15
A
43
-55 to 150
34
-55 to 150
mJ
°C
Parameter
Reverse Voltage
Symbol
VDS
TA=25°C
Pulsed Diode Forward Current
B
TA=25°C
Power Dissipation
A
TA=70°C
Junction and Storage Temperature Range
Alpha & Omega Semiconductor, Ltd.
Units
V
±12
EAR
TJ, TSTG
TA=70°C
Max Q2
30
8.5
6.8
Repetitive avalanche energy 0.3mH
Junction and Storage Temperature Range
Continuous Forward
AF
Current
Max Q1
30
±20
IAR
B
S2
VGS
PD
TA=70°C
Avalanche Current
G2
S1
Gate-Source Voltage
Power Dissipation
A
G1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
Pulsed Drain Current
Q2
Q1
SOIC-8
Continuous Drain
AF
Current
D2
Maximum Schottky
30
W
Units
V
3
IF
2.2
IFM
20
PD
TJ, TSTG
2
1.28
-55 to 150
A
W
°C
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AO4912
Parameter: Thermal Characteristics MOSFET Q1
t ≤ 10s
Maximum Junction-to-Ambient A
Steady-State
Maximum Junction-to-Ambient A
Steady-State
Maximum Junction-to-Lead C
Symbol
Parameter: Thermal Characteristics MOSFET Q2
t ≤ 10s
Maximum Junction-to-Ambient A
Steady-State
Maximum Junction-to-Ambient A
Steady-State
Maximum Junction-to-Lead C
Symbol
Thermal Characteristics Schottky
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead
C
t ≤ 10s
Steady-State
Steady-State
RθJA
RθJL
RθJA
RθJL
RθJA
RθJL
Typ
48
74
35
Max
62.5
110
40
Units
Typ
48
74
35
Max
62.5
110
40
Units
47.5
71
32
62.5
110
40
°C/W
°C/W
°C/W
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
TA=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
SOA curve provides a single pulse rating.
F. The current rating is based on the t ≤ 10s junction to ambient thermal resistance rating.
Rev 6: Jan 2007
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4912
Q2 Electrical Characteristics (T J=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Min
Conditions
ID=250µA, VGS=0V
30
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±12V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
25
TJ=55°C
5
VGS=10V, ID=7.0A
Static Drain-Source On-Resistance
TJ=125°C
VGS=4.5V, ID=6.0A
gFS
Forward Transconductance
VDS=5V, ID=7A
VSD
Diode Forward Voltage
IS=1A
IS
Maximum Body-Diode Continuous Current
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
1.5
SWITCHING PARAMETERS
Total Gate Charge
Qg
VGS=4.5V, VDS=15V, ID=7.0A
2
V
20
26
31.6
38
24.3
31
mΩ
1
V
3
A
710
pF
162
0.2
mΩ
S
590
VGS=0V, VDS=0V, f=1MHz
nA
A
0.78
VGS=0V, VDS=15V, f=1MHz
µA
100
22
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Output Capacitance
V
1
Zero Gate Voltage Drain Current
Coss
Max Units
VDS=30V, VGS=0V
IDSS
RDS(ON)
Typ
pF
40
56
pF
0.45
0.6
Ω
6.04
7.3
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
2.56
tD(on)
Turn-On DelayTime
3.7
5.5
ns
tr
Turn-On Rise Time
3.5
5.5
ns
tD(off)
Turn-Off DelayTime
14.9
22
ns
tf
Turn-Off Fall Time
2.5
4
ns
trr
Body Diode Reverse Recovery time
IF=7A, dI/dt=100A/µs
21.2
26
ns
Qrr
Body Diode Reverse Recovery charge IF=7A, dI/dt=100A/µs
14.2
21
nC
VGS=10V, VDS=15V, RL=2.2Ω,
RGEN=3Ω
1.46
nC
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
TA=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
SOA curve provides a single pulse rating.
F. The current rating is based on the t ≤ 10s junction to ambient thermal resistance rating.
Rev 6: Jan 2007
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4912
Q2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
20
10V
3.5V
25
3V
ID(A)
20
ID (A)
VDS=5V
16
4.5V
15
12
8
10
VGS=2.5V
125°C
4
5
0
0
0
1
2
3
4
0
5
0.5
1.5
2
2.5
3
3.5
1.8
30
Normalized On-Resistance
28
RDS(ON) (mΩ )
1
VGS (Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Fig 1: On-Region Characteristics
VGS=4.5V
26
24
22
VGS=10V
20
18
16
0
5
10
15
20
ID=7A
1.6
VGS=10V
VGS=4.5V
1.4
1.2
1
0.8
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
0
50
100
150
200
Temperature (°C)
Figure 4: On resistance vs. Junction Temperature
1.0E+01
70
60
1.0E+00
ID=7A
125°C
1.0E-01
50
IS (A)
RDS(ON) (mΩ )
25°C
40
125°C
1.0E-02
1.0E-03
30
25°C
1.0E-04
20
25°C
1.0E-05
10
2
4
6
8
10
VGS (Volts)
Figure 5: On resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
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AO4912
Q2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
750
5
VDS=15V
ID=7A
Ciss
600
Capacitance (pF)
VGS (Volts)
4
3
2
1
f=1MHz
VGS=0V
450
300
Coss
150
Crss
0
0
1
2
3
4
5
0
6
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
5
10
15
20
25
30
VDS (Volts)
Figure 8: Capacitance Characteristics
100.0
40
100µs
1ms
10.0
ID (A)
10ms
0.1s
1.0
TJ(Max)=150°C
TA=25°C
30
10µs
Power (W)
RDS(ON)
limited
TJ(Max)=150°C, T A=25°C
20
10
1s
10s
0
0.001
DC
0.1
0.1
1
10
100
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD
Ton
0.01
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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AO4912
Q1 Electrical Characteristics (T J=25°C unless otherwise noted)
Parameter
Symbol
Conditions
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current.
by Schottky leakage)
Min
ID=250µA, VGS=0V
(Set
Typ
30
VR=30V
V
0.007 0.05
VR=30V, TJ=125°C
3.2
10
mA
VR=30V, TJ=150°C
12
20
100
nA
1.8
3
V
13.8
17
20
24
25
mΩ
0.5
V
3.5
A
1165
pF
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
30
VGS=10V, ID=8.5A
A
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V, ID=7A
19.7
gFS
Forward Transconductance
VDS=5V, ID=8.5A
23
VSD
Diode+Schottky Forward Voltage
IS=1A
IS
Maximum Body-Diode+Schottky Continuous Current
TJ=125°C
Output Capacitance (FET + Schottky)
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
971
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
190
0.35
mΩ
S
0.45
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Max Units
pF
110
154
pF
0.7
0.85
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
19.2
23
nC
Qg
Total Gate Charge
9.36
11.2
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
4.2
tD(on)
Turn-On DelayTime
5.2
7.5
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
VGS=10V, VDS=15V, ID=8.5A
2.6
nC
nC
ns
VGS=10V, VDS=15V, RL=1.8Ω,
RGEN=3Ω
4.4
6.5
ns
17.3
25
ns
ns
tf
Turn-Off Fall Time
3.3
5
trr
Body Diode + Schottky Reverse Recovery Time
IF=8.5A, dI/dt=100A/µs
19.3
23
ns
Qrr
Body Diode + Schottky Reverse Recovery Charge
IF=8.5A, dI/dt=100A/µs
9.4
11
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
TA=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
SOA curve provides a single pulse rating.
F. The current rating is based on the t ≤ 10s junction to ambient thermal resistance rating.
Rev 6: Jan 2007
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4912
Q1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
25
25
3.5V
4.5V
15
10
5
5
0
0
1
2
3
125°C
15
10
VGS=3V
0
VDS=5V
20
ID(A)
20
ID (A)
30
4V
10V
4
25°C
1
5
1.5
RDS(ON) (mΩ )
3
3.5
4
180
110
0.7
1.7
Normalized On-Resistance
26
VGS=4.5V
22
2.5
VGS (Volts)
Figure 2: Transfer
1040Characteristics
VDS (Volts)
Fig 1: On-Region Characteristics
18
1.6
ID=8.5A
1.5
VGS=10V
VGS=4.5V
1.4
RGEN=3Ω
VGS=10V, VDS=15V, RL=1.8Ω, 1.3
VGS=10V
14
10
0
5
10
15
20
25
30
1.2
1.1
1
0.9
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
0
50
100
150
200
Temperature (°C)
Figure 4: On resistance vs. Junction Temperature
60
1.0E+01
50
125°C
1.0E+00
ID=8.5A
1.0E-01
40
IS (A)
RDS(ON) (mΩ )
2
30
25°C
1.0E-02
1.0E-03
FET+SCHOTTKY
125°C
20
1.0E-04
1.0E-05
25°C
10
2
4
6
8
10
VGS (Volts)
Figure 5: On resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
(Note F)
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AO4912
Q1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1500
10
VDS=15V
ID=8.5A
Capacitance (pF)
VGS (Volts)
8
1250
6
4
2
f=1MHz
VGS=0V
Ciss
1000
750
Coss FET+SCHOTTKY
500
Crss
250
0
0
4
8
12
16
0
20
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
100.0
10µs
10ms
ID (A)
20
25
30
TJ(Max)=150°C
TA=25°C
30
100µs
1ms
15
1040
180
110
0.7
40
Power (W)
10.0
10
VDS (Volts)
Figure 8: Capacitance Characteristics
TJ(Max)=150°C, T A=25°C
RDS(ON)
limited
5
0.1s
20
VGS=10V, VDS=15V, RL=1.8Ω, RGEN=3Ω
1.0
10
1s
10s
DC
0
0.001
0.1
0.1
1
10
100
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD
Ton
0.01
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com