AO4614

AOS Semiconductor
Product Reliability Report
AO4614/AO4614L,
rev B
Plastic Encapsulated Device
ALPHA & OMEGA Semiconductor, Inc
495 Mercury Drive
Sunnyvale, CA 94085
U.S.
Tel: (408) 830-9742
www.aosmd.com
Jan 4, 2006
This AOS product reliability report summarizes the qualification result for AO4614.
Accelerated environmental tests are performed on a specific sample size, and then followed
by electrical test at end point. Review of final electrical test result confirms that AO4614
passes AOS quality and reliability requirements. The released product will be categorized by
the process family and be monitored on a quarterly basis for continuously improving the
product quality.
Table of Contents:
I.
II.
III.
IV.
V.
Product Description
Package and Die information
Environmental Stress Test Summary and Result
Reliability Evaluation
Quality Assurance Information
I. Product Description:
The AO4614 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and
low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other
applications. Standard Product AO4614 is Pb-free (meets ROHS & Sony 259 specifications).
AO6409L is a Green Product ordering option. AO4614 and AO4614L are electrically identical.
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol Max n-channel
Max p-channel
Units
Drain-Source Voltage
VDS
40
-40
V
Gate-Source Voltage
VGS
±20
±20
V
6
-5
5
-4
20
-20
2
2
1.28
1.28
-55 to 150
-55 to 150
Continuous
Drain Current
TA=25°C
TA=70°C
Pulsed Drain Current
Power
Dissipation
ID
IDM
TA=25°C
TA=70°C
Junction and Storage
Temperature Range
PD
TJ, TSTG
A
W
°C
Thermal Characteristics : n-channel and p-channel
Parameter
Maximum Junctionto-Ambient
Maximum Junctionto-Ambient
Maximum Junctionto-Lead
Maximum Junctionto-Ambient
Maximum Junctionto-Ambient
Maximum Junctionto-Lead
Symbol
t ≤ 10s
SteadyState
SteadyState
t ≤ 10s
SteadyState
SteadyState
RθJA
RθJL
RθJA
RθJL
Device
Typ
Max
n-ch
48
62.5
n-ch
74
110
n-ch
35
50
p-ch
48
62.5
p-ch
74
110
p-ch
35
50
Units
°C/W
II. Die / Package Information:
AO4614
AO4614 (Green Compound)
Standard sub-micron
Standard sub-micron
low voltage N channel process low voltage N channel process
Process
Package Type
8 lead SOIC
Lead Frame
Copper with Solder Plate
Die Attach
Silver epoxy
Bond wire
2 mils Au wire
Mold Material
Epoxy resin with silica filler
Filler%( Spherical/Flake) 90/10
Flammability Rating
UL-94 V-0
Backside Metallization Ti / Ni / Ag
Moisture Level
Up to Level 1 *
8 lead SOIC
Copper with Solder Plate
Silver epoxy
2 mils Au wire
Epoxy resin with silica filler
100/0
UL-94 V-0
Ti / Ni / Ag
Up to Level 1*
Note * based on info provided by assembler and mold compound supplier
III. Result of Reliability Stress for AO4614 (Standard) & AO4614L (Green)
Test Item
Test Condition
Time Point
Solder
Reflow
Precondition
Standard: 1hr PCT+3 cycle
[email protected]°c
Green: 168hr 85°c /85RH
+3 cycle [email protected]°c
Temp = 150°c,
Vgs=100% of Vgsmax
0hr
HTGB
168 / 500
hrs
Lot Attribution
Total
Sample size
Number of
Failures
Standard: 49 lots
Green: 16 lots
9625 pcs
0
7 lots
574 pcs
0
(Note A*)
77+5 pcs / lot
1000 hrs
HTRB
HAST
Temp = 150°c,
Vds=80% of Vdsmax
130 +/- 2°c, 85%RH, 33.3
psi, Vgs = 80% of Vgs max
168 / 500
hrs
1000 hrs
100 hrs
7 lots
(Note A*)
Standard: 33 lots
Green: 13 lots
574 pcs
0
77+5 pcs / lot
2530 pcs
0
50+5 pcs / lot
Pressure Pot
121°c, 15+/-1 PSIG,
RH=100%
96 hrs
(Note B**)
Standard: 49 lots
Green: 16 lots
3575 pcs
0
50+5 pcs / lot
Temperature
Cycle
-65 to 150°c, air to air, 0.5hr
per cycle
250 / 500
cycles
(Note B**)
Standard: 49 lots
Green: 15 lots
3520 pcs
0
50+5 pcs / lot
(Note B**)
DPA
Internal Vision
Cross-section
X-ray
CSAM
NA
5
5
5
5
5
5
0
NA
5
5
0
Bond
Integrity
Room Temp
150°c bake
150°c bake
0hr
250hr
500hr
40
40
40
40 wires
40 wires
40 wires
0
Solderability
230°C
5 sec
15
15 leads
0
Note A: The HTGB and HTRB reliability data presents total of available AO4614and
AO4614L burn-in data up to the published date.
Note B: The pressure pot, temperature cycle and HAST reliability data for AO4614and
AO4614L comes from the AOS generic package qualification data.
IV. Reliability Evaluation
FIT rate (per billion): 14.3
MTTF = 7982 years
In general, 500 hrs of HTGB, 150 deg C accelerated stress testing is equivalent to 15 years of
lifetime at 55 deg C operating conditions (by applying the Arrhenius equation with an
activation energy of 0.7eV and 60% of upper confidence level on the failure rate calculation).
AOS reliability group also routinely monitors the product reliability up to 1000 hr at and
performs the necessary failure analysis on the units failed for reliability test(s).
The presentation of FIT rate for the individual product reliability is restricted by the actual
burn-in sample size of the selected product (AO4614). Failure Rate Determination is based
on JEDEC Standard JESD 85. FIT means one failure per billion hours.
Failure Rate = Chi2 x 109 / [2 (N) (H) (Af)]
= 1.83 x 109 / [2 (6×164) (168) (258) + 2 (164) (500) (258)] = 14.3
9
MTTF = 10 / FIT = 6.99 x 107hrs = 7982years
Chi² = Chi Squared Distribution, determined by the number of failures and confidence interval
N = Total Number of units from HTRB and HTGB tests
H = Duration of HTRB/HTGB testing
Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C)
Acceleration Factor [Af] = Exp [Ea / k ( 1/Tj u – 1/Tj s )]
Acceleration Factor ratio list:
Af
55 deg C
70 deg C
85 deg C
100 deg C
115 deg C
130 deg C
150 deg C
258
87
32
13
5.64
2.59
1
Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16
Tj u = The use junction temperature in degree (Kelvin), K = C+273.16
k = Boltzmann’s constant, 8.617164 X 10-5eV / K
V. Quality Assurance Information
Acceptable Quality Level for outgoing inspection: 0.1% for electrical and visual.
Guaranteed Outgoing Defect Rate: < 25 ppm
Quality Sample Plan: conform to Mil-Std-105D