AON2701 P-Channel Enhancement Mode Field Effect Transistor

AON2701
P-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
General Description
Features
The AON2701/L uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. A
Schottky diode is provided to facilitate the
implementation of a bidirectional blocking switch, or
for DC-DC conversion applications.
AON2701 and AON2701L are electrically identical.
-RoHS Compliant
-Halogen Free*
VDS (V) = -20V
ID = -3A
(VGS = -4.5V)
RDS(ON) < 120mΩ (VGS = -4.5V)
RDS(ON) < 160mΩ (VGS = -2.5V)
RDS(ON) < 200mΩ (VGS = -1.8V)
SCHOTTKY
VKA (V) = 20V, IF = 2A, VF<[email protected]
DFN 2x2 Package
A
NC
K
D
D
A
S
K
D
G
K
G
Bottom
Top
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
V
Gate-Source Voltage
GS
TA=25°C
TA=70°C
Continuous Drain CurrentA
B
IDM
VKA
Pulsed Drain Current
Schottky reverse voltage
TA=25°C
TA=70°C
A
Continuous Forward Current
Pulsed Forward Current
ID
B
MOSFET
-20
±8
-3
-2.3
Power Dissipation
Junction and Storage Temperature Range
Parameter: Thermal Characteristics MOSFET
t ≤ 10s
Maximum Junction-to-AmbientA
A
Steady-State
A
t ≤ 10s
A
Steady-State
Maximum Junction-to-Ambient
Thermal Characteristics Schottky
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Alpha & Omega Semiconductor, Ltd.
TJ, TSTG
Symbol
RθJA
RθJA
A
20
2.5
1.5
IF
PD
Units
V
V
-15
IFM
TA=25°C
TA=70°C
Schottky
V
A
1.5
15
1.45
0.95
0.92
-55 to 150
-55 to 150
°C
Typ
Max
Units
35
45
65
85
36
47
67
87
W
°C/W
°C/W
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AON2701
Electrical Characteristics (T J=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=-250µA, VGS=0V
-20
-1
TJ=55°C
-5
±100
IGSS
Gate-Body leakage current
VDS=0V, VGS=±8V
Gate Threshold Voltage
VDS=VGS ID=-250µA
-0.3
ID(ON)
On state drain current
VGS=-4.5V, VDS=-5V
-15
120
135
170
VGS=-2.5V, I D=-2.6A
128
160
mΩ
VGS=-1.8V, I D=-1.5A
160
200
mΩ
-1
V
-1.1
A
700
pF
TJ=125°C
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
VDS=-5V, ID=-3A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
-0.76
pF
63
pF
VGS=0V, VDS=0V, f=1MHz
9.5
13
Ω
5
6.5
nC
VGS=-4.5V, VDS=-10V, I D=-3A
1.2
nC
1
nC
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=-3A, dI/dt=100A/µs
21
Qrr
Body Diode Reverse Recovery Charge
IF=-3A, dI/dt=100A/µs
9.1
IF=1A
0.4
VGS=-4.5V, VDS=-10V, RL=1.5Ω,
RGEN=3Ω
Irm
Maximum reverse leakage current
VR=5V
VR=5V, TJ=125°C
Irm
Maximum reverse leakage current
VR=16V
VR=16V, TJ=125°C
CT
Junction Capacitance
Qrr
S
90
Gate Drain Charge
trr
mΩ
6
540
VGS=0V, VDS=-10V, f=1MHz
V
A
Qgd
SCHOTTKY PARAMETERS
VF
Forward Voltage Drop
nA
100
Forward Transconductance
Coss
µΑ
-1
gFS
IS
Units
-0.5
VGS=-4.5V, I D=-3A
Static Drain-Source On-Resistance
Max
V
VDS=-20V, VGS=0V
VGS(th)
RDS(ON)
Typ
5
ns
40
ns
28.5
ns
46
ns
28
ns
nC
0.45
V
0.05
10
0.1
20
34
Schottky Reverse Recovery Time
VR=10V
IF=1A, dI/dt=100A/µs
Schottky Reverse Recovery Charge
IF=1A, dI/dt=100A/µs
0.8
11
mA
mA
pF
14
ns
nC
A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in
any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
*This device is guaranteed green after data code 7111 (Oct 15 2007).
Rev5: March, 2010
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
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AON2701
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: MOSFET
15
15
VDS=-5V
-4.5V
-3.0V
12
25°C
-2.5V
9
-ID(A)
-ID (A)
12
-2.0V
6
3
9
125°C
6
3
VGS=-1.5V
0
0
0
1
2
3
4
0
1
-VDS (Volts)
Figure 1: On-Region Characteristics
280
3
4
Normalized On-Resistance
1.5
240
RDS(ON) (mΩ)
2
-VGS(Volts)
Figure 2: Transfer Characteristics
VGS=-1.8V
200
VGS=-2.5V
160
120
VGS=-4.5V
80
VGS=-1.8V
ID=-1.5A
VGS=-2.5V
ID=-2.6A
1.3
VGS=-4.5V
ID=-3A
1.1
0.9
0.7
0
2
4
6
8
10
-50
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
-15
-25
0
25
50
75
100
125
150
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1E+01
320
ID=-3A
280
1E+00
240
1E-01
-IS (A)
RDS(ON) (mΩ)
12
200
125°C
160
120
125°C
1E-02
25°C
1E-03
1E-04
25°C
80
1E-05
0
2
4
6
8
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics
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AON2701
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: MOSFET
5
700
3
2
Ciss
600
Capacitance (pF)
4
-VGS (Volts)
800
VDS=-10V
ID=-3A
500
400
300
Crss
Coss
200
1
100
0
0
0
1
2
3
4
5
0
6
ID (Amps)
10.00
100µ
1.00
1ms
RDS(ON)
limited
DC
10ms
0.1s
10s
1
10
100
ZθJA Normalized Transient
Thermal Resistance
1
100
0.01
1
100
10000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to
-15
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=85°C/W
TJ(Max)=150°C
TA=25°C
1
0.000001 0.0001
VDS (Volts)
10
20
10
0.01
0.1
15
1000
10µs
0.10
10
10000
TJ(Max)=150°C
TA=25°C
Power (W)
100.00
5
-VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
12
0.1
PD
0.01
Ton
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
Alpha & Omega Semiconductor, Ltd.
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AON2701
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY
10
200
160
125°C
Capacitance (pF)
IF (Amps)
1
0.1
25°C
0.01
120
80
40
0
0.001
0
0.2
0.4
0.6
0.8
1
0
1.2
Leakage Current (mA)
0.39
IF=1A
0.36
VF (Volts)
10
15
20
10
0.42
0.33
IF=0.5A
0.30
0.27
0.24
1
VKA=20V
VKA=16V
0.1
0.01
0
25
50
75
100
125
150
0
Temperature (°C)
Figure 14: Schottky Forward Drop vs.
Junction Temperature
10
ZθJA Normalized Transient
Thermal Resistance
5
VKA (Volts)
Figure 13: Schottky Capacitance Characteristics
VF (V)
Figure 12: Schottky Forward Characteristics
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=87°C/W
-15
25
50
75
100
125
Temperature (°C)
Figure 15: Schottky Leakage Current vs.
Junction Temperature
150
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
12
0.1
0.01
PD
Ton
0.001
T
Single Pulse
0.0001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Schottky Normalized Maximum Transient Thermal Impedance (Note E)
Alpha & Omega Semiconductor, Ltd.
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AON2701
Gate Charge Test Circuit & Waveform
Vgs
Qg
-10V
-
-
VDC
Qgd
+
+
DUT
Qgs
Vds
VDC
Vgs
Ig
Charge
R esistive S witching Test C ircuit & W aveform s
RL
Vds
t off
t on
td(on)
Vgs
-
DU T
V gs
t d(off)
tr
90%
Vdd
VDC
tf
+
Rg
Vgs
10%
V ds
D iod e R ecovery Test C ircuit & W aveform s
Q rr = -
Vds +
Idt
DU T
Vgs
V ds Isd
L
V gs
Ig
Alpha & Omega Semiconductor, Ltd.
-Isd
+ Vdd
t rr
dI/dt
-I R M
V dd
V DC
-
-I F
-V ds
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