Datasheet

AOC2413
8V P-Channel MOSFET
General Description
Product Summary
The AOC2413 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation
with gate voltages as low as 1.2V while retaining a 5V
VGS(MAX) rating.
VDS
ID (at VGS=-2.5V)
-8V
-3.5A
RDS(ON) (at VGS=-2.5V)
< 28mΩ
RDS(ON) (at VGS=-1.8V)
< 32mΩ
RDS(ON) (at VGS=-1.5V)
< 37mΩ
RDS(ON) (at VGS=-1.2V)
< 47mΩ
Typical ESD protection
AlphaDFN 1.57x1.57_4
Top View
HBM Class 3A
D
Bottom View
Top View
Bottom View
3
2
D
D
S
G
G
Pin1(G)
4
1
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Source Current (DC) Note1
TA=25°C
Source Current (Pulse) Note2
TA=25°C
Power Dissipation Note1
Junction and Storage Temperature Range
VGS
ID
Rev.1.0 : December 2013
±5
V
A
-50
TJ, TSTG
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Units
V
-3.5
IDM
PD
Thermal Characteristics
Parameter
Symbol
t ≤ 10s
Maximum Junction-to-Ambient A
RθJA
Maximum Junction-to-Ambient A D Steady-State
Note 1. Mounted on minimum pad PCB
Note 2. PW <300 µs pulses, duty cycle 0.5% max
Maximum
-8
Typ
140
190
0.55
W
-55 to 150
°C
Max
170
230
Units
°C/W
°C/W
Page 1 of 6
AOC2413
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=-250µA, VGS=0V
Gate-Body leakage current
VDS=0V, VGS=±5V
Gate Threshold Voltage
VDS=VGS ID=-250µA
VGS=-2.5V, ID=-1.5A
VGS=-1.8V, ID=-1A
25
32
mΩ
VGS=-1.5V, ID=-1A
28
37
mΩ
VGS=-1.2V, ID=-1A
34
47
mΩ
14
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Reverse Transfer Capacitance
Rg
Gate resistance
V
28
VDS=-5V, ID=-1.5A
Crss
µA
37
Forward Transconductance
Output Capacitance
±10
-0.65
22.5
gFS
Coss
-0.42
µA
29.5
TJ=125°C
Static Drain-Source On-Resistance
-5
-0.15
Units
V
-1
TJ=55°C
VGS(th)
Max
-8
VDS=-8V, VGS=0V
IGSS
RDS(ON)
Typ
VGS=0V, VDS=-4V, f=1MHz
-0.52
mΩ
S
-1
V
1935
pF
475
pF
240
pF
VGS=0V, VDS=0V, f=1MHz
1.7
KΩ
VGS=-4.5V, VDS=-4V, ID=-1.5A
7.5
nC
SWITCHING PARAMETERS
Qg
Total Gate Charge
19
27
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
3.5
nC
tD(on)
Turn-On DelayTime
1.6
µs
tr
Turn-On Rise Time
2.8
µs
tD(off)
Turn-Off DelayTime
2.7
µs
tf
Turn-Off Fall Time
6.2
µs
trr
Body Diode Reverse Recovery Time
IF=-1.5A, dI/dt=100A/µs
17
Qrr
Body Diode Reverse Recovery Charge IF=-1.5A, dI/dt=100A/µs
9
ns
nC
VGS=-2.5V, VDS=-4V, RL=2.67Ω,
RGEN=3Ω
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0 : December 2013
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Page 2 of 6
AOC2413
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
-4.5V
50
-2.5V
VDS=-5V
40
40
30
30
-ID(A)
-ID (A)
-2.0V
-1.5V
20
10
20
10
VGS=-1.0V
125°C
25°C
0
0
0
1
2
3
4
0
5
50
1
1.5
2
2.5
3
VGS=-1.2V
VGS=-1.5V
30
20
VGS=-2.5V
VGS=-1.8V
Normalized On-Resistance
1.6
40
RDS(ON) (mΩ
Ω)
0.5
-VGS(Volts)
Figure 2: Transfer Characteristics
-VDS (Volts)
Fig 1: On-Region Characteristics
VGS=-2.5V
ID=-1.5A
1.4
VGS=-1.8V
ID=-1A
1.2
VGS=-1.5V
ID=-1A
1
VGS=-1.2V
ID=-1A
0.8
10
0
1
0
2
3
4
5
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
60
1.0E+01
ID=-1.5A
125°C
1.0E+00
50
125°C
-IS (A)
RDS(ON) (mΩ
Ω)
1.0E-01
40
1.0E-02
30
1.0E-03
20
25°C
25°C
1.0E-04
1.0E-05
10
0
1
2
3
4
5
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.1.0 : December 2013
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AOC2413
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
3000
VDS=-4V
ID=-1.5A
2500
4
Capacitance (pF)
-VGS (Volts)
Ciss
3
2
2000
1500
1000
1
500
0
Crss
0
0
5
10
15
20
Qg (nC)
Figure 7: Gate-Charge Characteristics
25
0
2
4
6
-VDS (Volts)
Figure 8: Capacitance Characteristics
8
50
100.0
10µs
100µs
RDS(ON)
limited
1ms
10ms
1.0
TJ(Max)=150°C
TA=25°C
0.1
TJ(Max)=150°C
TA=25°C
40
Power (W)
10.0
-ID (Amps)
Coss
10s
DC
30
20
10
0
0.0
0.00001
0.01
0.1
1
-VDS (Volts)
10
0.001
0.1
10
1000
100
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area
Figure 10: Single Pulse Power Rating Junction-toAmbient
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=230°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Rev.1.0 : December 2013
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Page 4 of 6
AOC2413
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs
Ig
Charge
R es istiv e S w itch ing T e st C ircu it & W a ve fo rm s
RL
V ds
Vds
DUT
Vgs
90 %
+
Vdd
VDC
-
Rg
1 0%
Vgs
V gs
t d (o n )
tr
t d (o ff)
to n
tf
t o ff
D iode R ecovery T est C ircuit & W aveform s
Q rr = -
V ds +
Idt
DUT
V gs
V ds -
Isd
V gs
Ig
Rev.1.0 : December 2013
L
Isd
+
VD C
-
IF
t rr
dI/dt
I RM
V dd
V dd
V ds
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Page 5 of 6