AON6982 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary • Trench Power αMOS Technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Applications VDS Q1 30V Q2 30V ID (at VGS=10V) 50A 85A RDS(ON) (at VGS=10V) < 5.2mΩ < 2mΩ RDS(ON) (at VGS=4.5V) < 8.4mΩ < 2.45mΩ 100% UIS Tested 100% Rg Tested • DC/DC Converters in Computing • Isolated DC/DC Converters in Telecom and Industrial S2 S2 Bottom View Top View DFN5X6D Top View S2 Bottom View G2 PHASE PHASE (S1/D2) D1 D1 D1 D1 D1 S1/D2 PIN1 S1/D2 G1 Q2: SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode PIN1 Orderable Part Number Package Type Form Minimum Order Quantity AON6982 DFN 5x6D Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage C ±20 ±12 V 50 85 C Avalanche energy L=0.01mH VDS Spike C 10µs TC=25°C Power Dissipation B 31 15 25 IAS 38 80 A EAS 7 32 mJ VSPIKE 36 36 V 21 45 8 18 3.1 3.1 2 2 PDSM TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev.1.0: January 2015 19 PD TC=100°C TA=25°C A 67 260 IDSM TA=70°C TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State A 31 100 IDM TA=25°C Continuous Drain Current Power Dissipation Units V ID TC=100°C Avalanche Current Max Q2 30 VGS TC=25°C Continuous Drain G Current Pulsed Drain Current Max Q1 30 RθJA RθJC A W W -55 to 150 Typ Q1 30 50 4.6 www.aosmd.com Typ Q2 30 50 2.2 Max Q1 40 65 6 °C Max Q2 40 65 2.8 Units °C/W °C/W °C/W Page 1 of 10 Q1 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=250µA, VGS=0V Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA 1.4 TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance f=1MHz ±100 nA 2.2 V 4.3 5.2 6.3 7.6 6.8 8.4 mΩ 1 V 20 A 67 VGS=0V, VDS=15V, f=1MHz 0.6 µA 1.8 0.71 DYNAMIC PARAMETERS Ciss Input Capacitance Coss V 5 VGS=10V, ID=20A VDS=5V, ID=20A Units 1 TJ=55°C Static Drain-Source On-Resistance Max 30 VDS=30V, VGS=0V IDSS RDS(ON) Typ mΩ S 810 pF 335 pF 39 pF 1.2 1.8 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 12.8 nC Qg(4.5V) Total Gate Charge 6 nC VGS=10V, VDS=15V, ID=20A Qgs Gate Source Charge 2 nC Qgd Gate Drain Charge 2.3 nC tD(on) Turn-On DelayTime 6.5 ns VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 16.5 ns 17 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time 2.5 ns IF=20A, dI/dt=500A/µs 11 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 19 ns nC Body Diode Reverse Recovery Time A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: January 2015 www.aosmd.com Page 2 of 10 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 70 70 4V 60 4.5V 50 50 3.5V 10V 40 40 ID(A) ID (A) VDS=5V 60 30 125°C 30 20 25°C 20 10 10 VGS=3V 0 0 0 1 2 3 4 0 5 1 3 4 5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Figure 1: On-Region Characteristics (Note E) 10 Normalized On-Resistance 1.8 8 RDS(ON) (mΩ) 2 VGS=4.5V 6 4 VGS=10V 2 1.6 VGS=10V ID=20A 1.4 1.2 VGS=4.5V ID=20A 1 0.8 0 0 5 10 15 20 25 0 30 25 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 20 1.0E+01 ID=20A 1.0E+00 125°C 1.0E-01 12 IS (A) RDS(ON) (mΩ) 16 125°C 1.0E-02 8 25°C 1.0E-03 4 1.0E-04 25°C 0 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.1.0: January 2015 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 10 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1200 10 VDS=15V ID=20A 1000 Ciss Capacitance (pF) VGS (Volts) 8 6 4 2 800 600 200 0 5 10 15 0 Qg (nC) Figure 7: Gate-Charge Characteristics 10 15 20 25 30 500 10µs RDS(ON) limited 10µs 10.0 100µs 1ms 10ms DC 1.0 0.1 0.0 0.01 TJ(Max)=150°C TC=25°C 400 Power (W) 100.0 10 5 VDS (Volts) Figure 8: Capacitance Characteristics 1000.0 ID (Amps) Crss 0 0 ZθJC Normalized Transient Thermal Resistance Coss 400 TJ(Max)=150°C TC=25°C 300 200 100 0.1 1 10 VDS (Volts) VGS> or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0 0.00001 0.0001 0.001 100 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=6°C/W 1 0.1 PD Single Pulse Ton T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: January 2015 www.aosmd.com Page 4 of 10 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 60 50 Current rating ID(A) Power Dissipation (W) 20 15 10 5 40 30 20 10 0 0 0 25 50 75 100 125 0 150 25 TCASE (°C) Figure 12: Power De-rating (Note F) 50 75 100 125 150 TCASE (°C) Figure 13: Current De-rating (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 0.00001 0.001 0.1 10 1000 ZθJA Normalized Transient Thermal Resistance Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=65°C/W 0.1 0.01 PD Single Pulse Ton 0.001 0.0001 T 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.1.0: January 2015 www.aosmd.com Page 5 of 10 Q2 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=10mA, VGS=0V Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±12V Gate Threshold Voltage VDS=VGS, ID=250µA 1.1 TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance V 100 VGS=10V, ID=20A VDS=5V, ID=20A Units 0.5 TJ=55°C Static Drain-Source On-Resistance Max 30 VDS=30V, VGS=0V IDSS RDS(ON) Typ VGS=0V, VDS=15V, f=1MHz f=1MHz 0.9 mA ±100 nA 1.5 1.9 V 1.6 2 2.4 3 2 2.45 mΩ 0.7 V 50 A 100 0.45 mΩ S 3080 pF 920 pF 99 pF 1.9 2.9 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 48.5 Qg(4.5V) Total Gate Charge 20.7 nC 8 nC VGS=10V, VDS=15V, ID=20A nC Qgs Gate Source Charge Qgd Gate Drain Charge 5.5 nC tD(on) Turn-On DelayTime 9 ns tr Turn-On Rise Time 4 ns tD(off) Turn-Off DelayTime 44 ns tf trr Turn-Off Fall Time Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs Body Diode Reverse Recovery Time VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω IF=20A, dI/dt=500A/µs 7 ns 17.5 ns nC 43 A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: January 2015 www.aosmd.com Page 6 of 10 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 3V 80 VDS=5V 80 4.5V 10V 60 60 ID(A) ID (A) VGS=2.5V 125°C 40 40 20 20 25°C 0 0 0 1 2 3 4 0 5 1 3 4 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Figure 1: On-Region Characteristics (Note E) 4 Normalized On-Resistance 1.8 3 RDS(ON) (mΩ) 2 VGS=4.5V 2 1 VGS=10V VGS=10V ID=20A 1.6 1.4 1.2 VGS=4.5V ID=20A 1 0.8 0 0 5 10 15 20 25 0 30 25 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 5 1.0E+01 ID=20A 1.0E+00 125°C 1.0E-01 125°C 3 IS (A) RDS(ON) (mΩ) 4 25°C 1.0E-02 2 1.0E-03 25°C 1 1.0E-04 0 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.1.0: January 2015 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 7 of 10 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 4000 10 VDS=15V ID=20A Ciss 8 Capacitance (pF) VGS (Volts) 3000 6 4 2 2000 Coss 1000 Crss 0 0 0 10 20 30 40 50 60 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics ID (Amps) 25 30 10µs 100µs DC 1ms 10ms 1.0 TJ(Max)=150°C TC=25°C 400 Power (W) 10µs 10.0 300 200 100 TJ(Max)=150°C TC=25°C 0.0 0.01 ZθJC Normalized Transient Thermal Resistance 20 500 100.0 R DS(ON) limited 10 15 VDS (Volts) Figure 8: Capacitance Characteristics 1000.0 0.1 10 0.1 1 10 VDS (Volts) VGS> or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0 0.0001 100 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=2.8°C/W 1 0.1 PD Single Pulse Ton T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: January 2015 www.aosmd.com Page 8 of 10 50 100 40 80 Current rating ID(A) Power Dissipation (W) TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 20 10 60 40 20 0 0 0 25 50 75 100 125 0 150 25 TCASE (°C) Figure 12: Power De-rating (Note F) 50 75 100 125 150 TCASE (°C) Figure 13: Current De-rating (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 0.00001 0.001 0.1 10 1000 ZθJA Normalized Transient Thermal Resistance Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=65°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.1.0: January 2015 www.aosmd.com Page 9 of 10 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.1.0: January 2015 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 10 of 10