AON2810

AON2810
30V Dual N-Channel AlphaMOS
General Description
Product Summary
• Latest Trench Power AlphaMOS (αMOS LV) technology
• Very Low RDS(ON) at 2.5V VGS
• Low Gate Charge
• ESD protection
• RoHS and Halogen-Free Compliant
VDS
ID (at VGS=10V)
30V
2A
RDS(ON) (at VGS=10V)
< 44 mΩ
RDS(ON) (at VGS=4.5V)
< 52 mΩ
RDS(ON) (at VGS=2.5V)
< 74 mΩ
Typical ESD protection
HBM Class 3A
Application
• DC/DC Converters
DFN 2x2A
Top View
D2
Pin 1
G1
S1
G2
G1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
Gate-Source Voltage
Pulsed Drain Current
VDS Spike
Power Dissipation B
VGS
TA=25°C
Rev.1.0: August 2013
Steady-State
A
36
V
W
1.6
TJ, TSTG
Symbol
t ≤ 10s
V
2.5
PD
Junction and Storage Temperature Range
±12
8
VSPIKE
TA=70°C
Units
V
1.6
IDM
100ns
TA=25°C
Maximum
30
2
ID
TA=70°C
C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
S2
S1
Pin 1
Continuous Drain
Current G
D2
D1
Bottom View
D1
S2
G2
D1
D2
RθJA
-55 to 150
Typ
40
65
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°C
Max
50
80
Units
°C/W
°C/W
Page 1 of 5
AON2810
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
Gate-Body leakage current
VDS=0V, VGS=±10V
Gate Threshold Voltage
VDS=VGS，ID=250µA
VGS=10V, ID=2A
Static Drain-Source On-Resistance
1
44
41
52
VGS=2.5V, ID=1A
56
74
VGS=4.5V, ID=1A
9.5
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.75
IS
Maximum Body-Diode Continuous CurrentG
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Reverse Transfer Capacitance
Rg
Gate resistance
V
61
VDS=5V, ID=2A
Crss
µA
1.4
36
Forward Transconductance
Output Capacitance
±10
50
TJ=125°C
gFS
Coss
µA
5
0.6
VGS=0V, VDS=15V, f=1MHz
S
V
2
A
235
pF
75
pF
pF
Ω
8
12
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
4.5
10
nC
Qg(4.5V) Total Gate Charge
2.2
6
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
Qrr
VGS=10V, VDS=15V, ID=2A
4
mΩ
1
15
f=1MHz
Units
V
1
TJ=55°C
VGS(th)
Max
30
VDS=30V, VGS=0V
IGSS
RDS(ON)
Typ
0.3
nC
0.7
nC
3
ns
3
ns
24
ns
6
ns
7.2
ns
nC
VGS=10V, VDS=15V, RL=7.5Ω,
RGEN=3Ω
IF=2A, dI/dt=100A/µs
Body Diode Reverse Recovery Charge IF=2A, dI/dt=100A/µs
1.3
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C.
B. The Power dissipation PD is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: August 2013
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Page 2 of 5
AON2810
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20.0
20
10V
VDS=5V
4.5V
16.0
3V
16
12.0
ID(A)
ID (A)
12
2.5V
8.0
8
4.0
4
125°C
25°C
VGS=2V
0
0.0
0
1
2
3
4
0
5
100
2
3
4
5
Normalized On-Resistance
1.6
80
RDS(ON) (mΩ
Ω)
1
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
VGS=2.5V
60
VGS=4.5V
40
VGS=10V
20
VGS=4.5V
ID=1A
1.4
17
VGS=10V
ID5
=2A
2
10
1.2
VGS=2.5V
ID=1A
1
0.8
0
0
0
2
4
6
8
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
100
1.0E+01
ID=2A
1.0E+00
80
40
125°C
1.0E-01
60
IS (A)
RDS(ON) (mΩ
Ω)
125°C
1.0E-02
40
1.0E-03
25°C
20
25°C
1.0E-04
1.0E-05
0
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.1.0: August 2013
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AON2810
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
350
VDS=15V
ID=2A
300
Ciss
250
Capacitance (pF)
VGS (Volts)
8
6
4
200
150
Coss
100
2
50
0
Crss
0
0
1
2
3
4
5
0
5
Qg (nC)
Figure 7: Gate-Charge Characteristics
10
15
20
25
30
VDS (Volts)
Figure 8: Capacitance Characteristics
200
10.0
10µs
RDS(ON)
limited
TA=25°C
100µs
ID (Amps)
1ms
10ms
DC
0.1
Power (W)
150
1.0
10s
50
TJ(Max)=150°C
TA=25°C
0.0
0.01
100
0
0.00001
0.1
1
10
0.001
0.1
10
1000
100
VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
VGS> or equal to 2.5V
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
RθJA=80°C/W
0.1
PD
0.01
Single Pulse
Ton
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
T
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: August 2013
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Page 4 of 5
AON2810
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs
Ig
Charge
R es istiv e S w itch ing T e st C ircu it & W a ve fo rm s
RL
V ds
Vds
DUT
Vgs
90 %
+
Vdd
VDC
-
Rg
1 0%
Vgs
V gs
t d (o n )
tr
t d (o ff)
to n
tf
t o ff
D iode R ecovery T est C ircuit & W aveform s
Q rr = -
V ds +
Idt
DUT
V gs
V ds -
Isd
V gs
Ig
Rev.1.0: August 2013
L
Isd
+
VD C
-
IF
t rr
dI/dt
I RM
V dd
V dd
V ds
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Page 5 of 5