AO3430 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3430/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. AO3430 and AO3430L are electrically identical. -RoHS Compliant -AO3430L is Halogen Free VDS (V) = 20V ID = 2 A RDS(ON) < 57mΩ RDS(ON) < 70mΩ RDS(ON) < 93mΩ TO-236 (SOT-23) Top View (V GS = 4.5V) (V GS = 4.5V) (VGS = 2.5V) (VGS = 1.8V) D G D S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current A,F Pulsed Drain Current ID IDM TA=70°C B Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. ±8 V 10 1.4 W 0.9 TJ, TSTG °C -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A 2 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Units V 2 TA=25°C Power Dissipation A Maximum 20 RθJA RθJL Typ 70 100 63 Max 90 125 80 Units °C/W °C/W °C/W AO3430 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS=±8V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.4 ID(ON) On state drain current VGS=4.5V, VDS=5V 15 TJ=55°C VGS=4.5V, ID=2A TJ=125°C VGS=2.5V, ID=2A 5 0.7 56 70 mΩ 93 mΩ 11 VSD Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current 0.7 Output Capacitance Reverse Transfer Capacitance Rg Gate resistance 436 VGS=0V, VDS=0V, f=1MHz VGS=4.5V, VDS=10V, ID=2A Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr 1 V 2 A 523 pF 66 VGS=5V, VDS=10V, RL=5Ω, RGEN=6Ω 3 mΩ S pF 44 SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd V 79 71 Crss 1 57 VGS=1.8V, ID=2A VGS=0V, VDS=10V, f=1MHz nA 66 VDS=5V, ID=2A Coss 100 47 Forward Transconductance DYNAMIC PARAMETERS Ciss Input Capacitance µA A gFS IS Units V 1 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max 20 VDS=16V, VGS=0V IDSS RDS(ON) Typ pF 4.5 Ω 6.2 nC 1.6 nC 0.5 nC 5.5 ns 6.3 ns 40 ns 12.7 ns IF=2A, dI/dt=100A/µs 12.3 Body Diode Reverse Recovery Charge IF=2A, dI/dt=100A/µs 3.5 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in curve provides a single pulse rating. F. The maximum current is limited by bonding wire Rev1 : May. 2008 2 ≤ 10s thermal FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO3430 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 16 VDS=5V 4.5V 8 2V 3V 2.5V 8 ID(A) ID (A) 12 6 4 VGS=1.5V 4 125°C 2 25°C 0 0 0 1 2 3 4 5 0 0.5 1 1.5 100 Normalized On-Resistance VGS=1.8V 80 RDS(ON) (mΩ) 2.5 1.8 ID=2A VGS=2.5V 60 40 VGS=4.5V 20 VGS=2.5V 1.6 VGS=1.8V 1.4 VGS=4.5V 1.2 1 0.8 0 4 8 12 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 100 1E+01 ID=2A 90 1E+00 125°C 1E-01 80 125°C IS (A) RDS(ON) (mΩ) 2 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Figure 1: On-Region Characteristics 70 1E-02 25°C 1E-03 60 50 1E-04 25°C 1E-05 40 0 2 4 6 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AO3430 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 800 5 VDS=10V ID=2A Capacitance (pF) VGS (Volts) 4 3 2 1 600 400 0 2 4 6 0 8 Crss 100.00 10ms Power (W) 0.1s DC 0.10 0.1 1 VDS (Volts) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=90°C/W 10 5 10 0 1E-04 0.001 100 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 20 15 100µ 1m 10s 0.01 0.01 15 TJ(Max)=150°C TA=25°C 10µs RDS(ON) limited 1.00 10 20 TJ(Max)=150°C TC=25°C 10.00 5 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics ID (Amps) Coss 200 0 0 ZθJA Normalized Transient Thermal Resistance Ciss In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note E) Alpha & Omega Semiconductor, Ltd. 100 1000