AON6444L

AON6444L
60V N-Channel MOSFET
TM
SDMOS
General Description
Product Summary
TM
The AON6444L is fabricated with SDMOS trench
technology that combines excellent RDS(ON) with low gate
charge.The result is outstanding efficiency with controlled
switching behavior. This universal technology is well suited
for PWM, load switching and general purpose applications.
VDS
60V
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
81A
< 6.5mΩ
RDS(ON) (at VGS = 4.5V)
< 8mΩ
100% UIS Tested
100% Rg Tested
D
Top View
1
8
2
3
7
6
4
5
G
S
DFN5X6
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TC=25°C
Continuous Drain
Current
Pulsed Drain Current
C
V
A
170
14
IDSM
TA=70°C
±20
51
IDM
TA=25°C
Continuous Drain
Current
Units
V
81
ID
TC=100°C
Maximum
60
A
11
Avalanche Current C
IAR
58
A
Repetitive avalanche energy L=0.1mH C
EAR
168
mJ
TC=25°C
Power Dissipation
B
TC=100°C
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Rev 0: January 2009
2.3
Steady-State
Steady-State
RθJA
RθJC
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W
1.4
TJ, TSTG
Symbol
t ≤ 10s
W
33
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
AD
Maximum Junction-to-Ambient
Maximum Junction-to-Case
83
PD
°C
-55 to 150
Typ
14
40
1
Max
17
55
1.5
Units
°C/W
°C/W
°C/W
Page 1 of 7
AON6444L
Electrical Characteristics (T J=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
VDS=60V, VGS=0V
500
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th)
ID(ON)
Gate Threshold Voltage
On state drain current
VDS=VGS ID=250µA
1.5
VGS=10V, VDS=5V
170
VGS=10V, ID=20A
TJ=125°C
VGS=4.5V, ID=20A
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
IS
VDS=5V, ID=20A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
VGS=0V, VDS=30V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=30V, ID=20A
Units
V
100
TJ=55°C
Static Drain-Source On-Resistance
Max
60
IGSS
RDS(ON)
Typ
µA
100
nA
2
2.5
V
5.4
6.5
9.6
11.5
6.4
8
mΩ
1
V
81
A
A
75
0.7
mΩ
S
3800
4800
5800
pF
330
470
610
pF
110
190
270
pF
0.5
1
1.5
Ω
64
80
96
nC
32
40
48
nC
12
15
18
nC
8
14
20
nC
VGS=10V, VDS=30V, RL=1.5Ω,
RGEN=3Ω
13.5
ns
4.2
ns
51
ns
7
ns
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=500A/µs
14
18
22
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
43
54
65
ns
nC
A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
Rev 0: January 2009
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: January 2009
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Page 2 of 7
AON6444L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
150
10V
7V
120
150
4V
VDS=5V
120
4.5V
90
ID(A)
ID (A)
5V
90
3.5V
60
60
30
30
125°C
25°C
VGS=3V
0
0
0
1
2
3
4
0
5
8
2
3
4
5
Normalized On-Resistance
2
7
RDS(ON) (mΩ)
1
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
VGS=4.5V
6
VGS=10V
5
VGS=10V
ID=20A
1.8
1.6
17
5
1.4
VGS=4.5V
ID=20A 2
1.2
10
1
0.8
4
0
5
0
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
25
50
75
100
125
150
175
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
1.0E+02
15
ID=20A
1.0E+01
13
9
IS (A)
RDS(ON) (mΩ)
40
1.0E+00
11
125°C
7
125°C
1.0E-01
1.0E-02
25°C
1.0E-03
5
1.0E-04
25°C
1.0E-05
3
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: January 2009
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 7
AON6444L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
7000
VDS=30V
ID=20A
6000
Capacitance (pF)
VGS (Volts)
8
6
4
2
Ciss
5000
4000
3000
2000
Coss
Crss
1000
0
0
0
20
40
60
80
100
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
10
20
30
40
50
VDS (Volts)
Figure 8: Capacitance Characteristics
60
400
1000.0
360
10µs
10.0
100µs
1ms
DC
1.0
0.1
320
10µs
RDS(ON)
limited
TJ(Max)=150°C
TC=25°C
TJ(Max)=150°C
TC=25°C
280
Power (W)
ID (Amps)
100.0
17
5
2
10
240
200
160
120
80
40
0.0
0.01
0.1
1
VDS (Volts)
10
100
0
0.0001
ZθJC Normalized Transient
Thermal Resistance
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
1
0
10
40
PD
0.1
Ton
0.01
0.00001
0.1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=1.5°C/W
1
0.01
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
10
0.001
Single Pulse
0.0001
0.001
0.01
0.1
T
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: January 2009
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Page 4 of 7
AON6444L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
90
80
120
Power Dissipation (W)
IAR (A) Peak Avalanche Current
150
TA=25°C
90
TA=100°C
60
TA=150°C
30
TA=125°C
60
50
40
81A
30
20
10
0
0
0.000001
0
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability (Note
C)
100
10000
80
1000
50
75
100
125
150
TA=25°C
60
40
17
5
2
10
100
10
20
1
0.0001
0
0
25
50
75
100
125
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
0.01
1
100
10000
0
18
150
TCASE (°C)
Figure 14: Current De-rating (Note F)
ZθJA Normalized Transient
Thermal Resistance
25
TCASE (°C)
Figure 13: Power De-rating (Note F)
Power (W)
Current rating ID(A)
70
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note G)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=55°C/W
0.1
PD
0.01
Single Pulse
0.001
0.0001
0.001
0.01
0.1
Ton
1
T
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note G)
Rev 0: January 2009
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Page 5 of 7
AON6444L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
80
2
21
125ºC
di/dt=800A/µs
di/dt=800A/µs
18
20
1.6
15
125ºC
40
10
Irm
25ºC
5
0
10
15
20
25
0.8
S
0
0
25ºC
Qrr
10
125º
20
0
200
400
600
5
800
20
15
25ºC
0
1000
2
1.5
trr
1
25ºC
5
0
0
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200
400
0.5
S
125º
di/dt (A/µs)
Figure 19: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
Rev 0: January 2009
30
125ºC
Irm
0
25
2.5
10
25ºC
20
Is=20A
trr (ns)
15
40
15
25
20
60
10
30
Irm (A)
Qrr (nC)
125ºC
5
IS (A)
Figure 18: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
25
80
0.4
125ºC
IS (A)
Figure 17: Diode Reverse Recovery Charge and
Peak Current vs. Conduction Current
Is=20A
81A
0
30
100
1.2
25ºC
3
0
5
25ºC
9
6
20
0
trr
12
S
25ºC
trr (ns)
Qrr
Irm (A)
Qrr (nC)
15
60
125ºC
S
100
600
800
0
1000
di/dt (A/µs)
Figure 20: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
Page 6 of 7
AON6444L
Gate Charge Test Circuit & W aveform
Vgs
Qg
10V
+
+ Vds
VDC
-
VDC
DUT
Qgs
Qgd
-
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
Rg
-
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
VDC
Rg
-
I AR
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev 0: January 2009
Vgs
Isd
L
+ Vdd
VDC
-
IF
t rr
dI/dt
I RM
Vdd
Vds
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Page 7 of 7