AOS Semiconductor Product Reliability Report AO4409 / AO4409L, rev B Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel: (408) 830-9742 www.aosmd.com Nov 24, 2004 1 This AOS product reliability report summarizes the qualification result for AO4409. Accelerated environmental tests are performed on a specific sample size, and then followed by electrical test at end point. Review of final electrical test result confirms that AO4409 passes AOS quality and reliability requirements. The released product will be categorized by the process family and be monitored on a quarterly basis for continuously improving the product quality. Table of Contents: I. II. III. IV. V. Product Description Package and Die information Environmental Stress Test Summary and Result Reliability Evaluation Quality Assurance Information I. Product Description: AO4409 / AO4409L, a p channel MOSFET, is mostly used as a bi-directional load switch for battery protection. The device stays in the ON-state during battery charging & discharging most of the time. It is in OFF state only under over-charge / over-discharge conditions. The device transition slowly between on and off states. AO4409 uses advance sub-micron technology on wafer manufacturing. Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Maximum Units Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V TA=25°C Continuous Drain A Current TA=70°C Pulsed Drain Current B TA=25°C A Power Dissipation TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-toAmbient Maximum Junction-toAmbient Maximum Junction-to-Lead -15 ID -12.8 IDM -80 A 3 PD W 2.1 TJ, TSTG -55 to 150 Symbol t ≤ 10s SteadyState SteadyState RθJA RθJL °C Typ Max Units 26 40 °C/W 50 75 °C/W 14 24 °C/W 2 II. Die / Package Information: Process AO4409 AO4409L (Green Compound) Standard sub-micron Standard sub-micron low voltage P channel process low voltage P channel process Package Type Lead Frame Die Attach Bondwire Mold Material Filler % (Spherical/Flake) Flammability Rating Backside Metallization Moisture Level 8 lead SO Copper with Solder Plate Silver-filled Epoxy 2 mils Au wire Epoxy resin with silica filler 50/50 UL-94 V-0 Ti / N / Ag Up to Level 1 * 8 lead SO Copper with Solder Plate Silver-filled Epoxy 2 mils Au wire Epoxy resin with silica filler 100/0 UL-94 V-0 Ti / N / Ag Up to Level 1* Note * based on info provided by assembler and mold compound supplier III. Result of Reliability Stress for AO4409 (Standard) & AO4409L (Green) Test Item Test Condition Time Point Lot Attribution Total Sample size HTGB Temp = 150 C, Vgs=100% of Vgsmax 168 / 500 hrs AO4409: 4 lots AO4409L: 1 lot 410 pcs Temp = 150 C, Vds=80% of Vdsmax 168 / 500 hrs Pressure Pot Temperature Cycle ESD Rating 130 +/- 2 C, 85%, 33.3 psi, Vgs = 80% of Vgs max 100 hrs 121 C, 15+/-1 PSIG, RH=100% 96 hrs -65 to 150 deg C, air to air, 0.5hr per cycle Human Body Mode MIL-STD 883D Method 3025.7 (note A*) AO4409: 4 lots AO4409L: 1 lot 410 pcs 0 77+5 pcs / lot 1000 hrs HAST 0 77+5 pcs / lot 1000 hrs HTRB Number of Failures 250 / 500 cycles 3500V (note A*) Standard compound: 3 lots Green compound: 7 lots (note B**) 550 pcs (10 lots) Standard compound: 3 lots Green compound: 8 lots ** (note B**) 605 pcs (11 lots) Standard compound: 3 lots Green compound: 6 lots ** (note B**) 495 pcs (9 lots) 10 pcs each from AO4409 and AO4409L 20 pcs 0 50+5 pcs / lot 0 50+5 pcs / lot 0 50+5 pcs / lot 0 3 III. Result of Reliability Stress for AO4405 (Standard) & AO4405L (Green) Continues DPA Internal Vision Cross-section X-ray CSAM NA 5 5 5 5 5 5 0 NA 5 5 0 Bond Integrity Room Temp 150°°C bake 150°°C bake 0hr 250hr 500hr 40 40 40 40 wires 40 wires 40 wires 0 Solderability 230°°C 5 sec 15 15 leads 0 Die shear 150°C 0hr 10 10 0 Note A: The HTGB and HTRB reliability data presents total of available AO4409 and AO4409L burn-in data up to the published date. Note B: The pressure pot, temperature cycle and HAST reliability data for AO4409L comes from the AOS generic green compound package qualification data. IV. Reliability Evaluation FIT rate (per billion): 8.64. MTBF=13212 years 500 hrs of HTGB, 150 deg C accelerated stress testing is equivalent to 15 years of lifetime at 55 deg C operating conditions (by applying the Arrhenius equation with an activation energy of 0.7eV and 60% of upper confidence level on the failure rate calculation). AOS reliability group also routinely monitors the product reliability up to 1000 hr at and performs the necessary failure analysis on the units failed for reliability test(s). The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in sample size of the selected product (AO4409). Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one failure per billion hours. 2 Failure Rate = Chi x 10 9 9 / [2 (N) (H) (Af)] = 1.83 x 109 / [ 2 (820) (500) (258.24) ] = 8.64 8 MTBF = 10 / FIT = 1.16x 10 hrs = 13212years Chi² = Chi Squared Distribution, determined by the number of failures and confidence interval N = Total Number of units from HTRB and HTGB tests H = Duration of HTRB/HTGB testing Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55C) Acceleration Factor [Af] = Exp [Ea / k ( 1/Tj u – 1/Tj s )] 4 Acceleration Factor ratio list: Af 55 deg C 70 deg C 85 deg C 100 deg C 115 deg C 130 deg C 150 deg C 258 87 32 13 5.64 2.59 1 Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16 Tj u =The use junction temperature in degree (Kelvin), K = C+273.16 k = Boltznan’s constant, 8.617164 X 10 E-5V / K V. Quality Assurance Information Acceptable Quality Level for outgoing inspection: 0.1% for electrical and visual. Guaranteed Outgoing Defect Rate: < 25 ppm Quality Sample Plan: conform to Mil-Std-105D 5